The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching（RS） cells.Here we report the RS properties of Au/Ni O/Sr Ti O3（STO）/Pt memory ...The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching（RS） cells.Here we report the RS properties of Au/Ni O/Sr Ti O3（STO）/Pt memory cells.The switching repeatability is closely related to the applied bias polarity,which is different from the scenario of the Au/STO/Pt cells reported in our previous researches.The high resistance in positive bias is greater than that in negative bias.The R（T）–R0I^2 R（T） plot of the on-state I–V curve shows a regular shape only with a slight bend and an abnormal shape with an abrupt increase and decrease under negative and positive bias,respectively.These comparative experimental results reveal that the conductance filament consisting of oxygen vacancies grows from the cathode to the anode.The spatial RS location is identified with the weaker part along the conductance filament length direction,which should be near the Ni O/STO interface and STO/Pt interface under positive and negative bias,respectively.展开更多
In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the p...In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.展开更多
The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） d...The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） during the electroforming process： with a higher Icomp （5 mA） the unipolar resistance switching behavior is measured, while the bipolar resistance switching behavior is observed with a lower Icomp （1 mA）. On the basis of I–V characteristics, the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO3 interface and the formation and disruption of conduction filaments, respectively.展开更多
ZnMn_2O_4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn_2O_4/p^+-Si structure was fabricated. The microstructure of ZnMn_2O_4 films and the resistive switc...ZnMn_2O_4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn_2O_4/p^+-Si structure was fabricated. The microstructure of ZnMn_2O_4 films and the resistive switching behavior of Ag/ZnMn_2O_4/p^+-Si device were investigated. ZnMn_2O_4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn_2O_4/p^+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state(HRS) conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state(LRS). For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.11404093)the Foundation of Henan Provincial Science and Technology Department,China(Grant No.132102210258)+1 种基金the Research Funding from Henan Province,China(Grant Nos.15A140001,2015GGJS-021,and 17HASTIT014)the Henan University Emerging Cross and Characteristic Discipline Cultivation Program,China(Grant No.xxjc20140016)
文摘The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching（RS） cells.Here we report the RS properties of Au/Ni O/Sr Ti O3（STO）/Pt memory cells.The switching repeatability is closely related to the applied bias polarity,which is different from the scenario of the Au/STO/Pt cells reported in our previous researches.The high resistance in positive bias is greater than that in negative bias.The R（T）–R0I^2 R（T） plot of the on-state I–V curve shows a regular shape only with a slight bend and an abnormal shape with an abrupt increase and decrease under negative and positive bias,respectively.These comparative experimental results reveal that the conductance filament consisting of oxygen vacancies grows from the cathode to the anode.The spatial RS location is identified with the weaker part along the conductance filament length direction,which should be near the Ni O/STO interface and STO/Pt interface under positive and negative bias,respectively.
基金Project supported by the National Natural Science Foundation of China for Excellent Young Scholars(Grant No.51422201)the National Natural Science Foundation of China(Grant Nos.51172041,51372035,11304035,61574031,and 61404026)+4 种基金the National Basic Research Program of China(Grant No.2012CB933703)the"111"Project,China(Grant No.B13013)the Fund from Jilin Province,China(Grant Nos.20140520106JH and 20140201008GX)the Research Fund for the Doctoral Program of Higher Education,China(Grant No.20130043110004)the Fundamental Research Funds for the Central Universities,China(Grant Nos.2412015KJ008 and 2412016KJ003)
文摘In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.
基金Project supported by the Key Projects of the National Natural Science Foundation of China(Grant No.11032010)the National Natural Science Foundation of China(Grant Nos.51072171,61274107,61176093,and 11275163)+4 种基金the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT1080)the National Basic Rearch Program of China(Grant No.2012CB326404)the Key Projects of Scientific Research Fund of Hunan Provincial Education Department,China(Grant No.12A129)the Doctoral Program of Higher Education of China(Grant No.20104301110001)the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,China
文摘The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） during the electroforming process： with a higher Icomp （5 mA） the unipolar resistance switching behavior is measured, while the bipolar resistance switching behavior is observed with a lower Icomp （1 mA）. On the basis of I–V characteristics, the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO3 interface and the formation and disruption of conduction filaments, respectively.
基金Funded by the National Natural Science Foundation of China(No.51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘ZnMn_2O_4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn_2O_4/p^+-Si structure was fabricated. The microstructure of ZnMn_2O_4 films and the resistive switching behavior of Ag/ZnMn_2O_4/p^+-Si device were investigated. ZnMn_2O_4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn_2O_4/p^+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state(HRS) conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state(LRS). For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.
