The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and the...The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.展开更多
Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flu...Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.展开更多
We report on the temperature dependence of single-event upsets in the 215–353 K range in a 4M commercial SRAM manufactured in a 0.15-lm CMOS process,utilizing thin film transistors. The experimental results show that...We report on the temperature dependence of single-event upsets in the 215–353 K range in a 4M commercial SRAM manufactured in a 0.15-lm CMOS process,utilizing thin film transistors. The experimental results show that temperature influences the SEU cross section on the rising portion of the cross-sectional curve(such as the chlorine ion incident). SEU cross section increases 257 %when the temperature increases from 215 to 353 K. One of the possible reasons for this is that it is due to the variation in upset voltage induced by changing temperature.展开更多
Experimental evidence is presented relevant to the angular dependences of multiple-bit upset （MBU） rates and patterns in static random access memories （SRAMs） under heavy ion irradiation. The single event upset （...Experimental evidence is presented relevant to the angular dependences of multiple-bit upset （MBU） rates and patterns in static random access memories （SRAMs） under heavy ion irradiation. The single event upset （SEU） cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer （LET） value of 41 MeV/（mg/cm2）, which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of - 9.5 MeV/（mg/cm2）, no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset （DBU） patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects （SEE） sensitivity, especially in MBU-sensitive devices.展开更多
Single event upsets(SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code(ECC) utilizing Hamming Code.The results s...Single event upsets(SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code(ECC) utilizing Hamming Code.The results show that the ECC did improve the performance dramatically,with the SEU cross sections of SRAMs with ECC being at the order of 10^(-11) cm^2/bit,two orders of magnitude higher than that without ECC(at the order of 10^(-9) cm^2/bit).Also,ineffectiveness of ECC module,including 1-,2- and 3-bits errors in single word(not Multiple Bit Upsets),was detected.The ECC modules in SRAMs utilizing(12,8) Hamming code would lose work when 2-bits upset accumulates in one codeword.Finally,the probabilities of failure modes involving 1-,2- and 3-bits errors,were calcaulated at 39.39%,37.88%and 22.73%,respectively,which agree well with the experimental results.展开更多
太空中的单粒子效应会对电子器件造成损伤,地面模拟是评估器件抗辐射性能的有效途径。现有的模拟方法大多是基于器件的物理底层模型进行电流源脉冲故障注入,不适用于百万门级大规模集成电路(very large scale integration,VLSI)。针对...太空中的单粒子效应会对电子器件造成损伤,地面模拟是评估器件抗辐射性能的有效途径。现有的模拟方法大多是基于器件的物理底层模型进行电流源脉冲故障注入,不适用于百万门级大规模集成电路(very large scale integration,VLSI)。针对该问题,提出了一种从器件高层行为模型注入单粒子翻转故障的方法,并基于8051 IP核进行了单粒子一位翻转和连续两位翻转的仿真和实验比较。研究结果表明,单粒子翻转故障可直接注入到器件的高层来评估系统的抗单粒子性能。展开更多
文摘The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.
基金supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201306)
文摘Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.
基金the National Natural Science Foundation of China(No.11405275)
文摘We report on the temperature dependence of single-event upsets in the 215–353 K range in a 4M commercial SRAM manufactured in a 0.15-lm CMOS process,utilizing thin film transistors. The experimental results show that temperature influences the SEU cross section on the rising portion of the cross-sectional curve(such as the chlorine ion incident). SEU cross section increases 257 %when the temperature increases from 215 to 353 K. One of the possible reasons for this is that it is due to the variation in upset voltage induced by changing temperature.
基金supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,and 11005134)
文摘Experimental evidence is presented relevant to the angular dependences of multiple-bit upset （MBU） rates and patterns in static random access memories （SRAMs） under heavy ion irradiation. The single event upset （SEU） cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer （LET） value of 41 MeV/（mg/cm2）, which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of - 9.5 MeV/（mg/cm2）, no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset （DBU） patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects （SEE） sensitivity, especially in MBU-sensitive devices.
基金Supported by the National Natural Science Foundation of China(Nos.11079045 and 11179003)the Important Direction Project of the CAS Knowledge Innovation Program(No.KJCX2-YW-N27)
文摘Single event upsets(SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code(ECC) utilizing Hamming Code.The results show that the ECC did improve the performance dramatically,with the SEU cross sections of SRAMs with ECC being at the order of 10^(-11) cm^2/bit,two orders of magnitude higher than that without ECC(at the order of 10^(-9) cm^2/bit).Also,ineffectiveness of ECC module,including 1-,2- and 3-bits errors in single word(not Multiple Bit Upsets),was detected.The ECC modules in SRAMs utilizing(12,8) Hamming code would lose work when 2-bits upset accumulates in one codeword.Finally,the probabilities of failure modes involving 1-,2- and 3-bits errors,were calcaulated at 39.39%,37.88%and 22.73%,respectively,which agree well with the experimental results.
文摘太空中的单粒子效应会对电子器件造成损伤,地面模拟是评估器件抗辐射性能的有效途径。现有的模拟方法大多是基于器件的物理底层模型进行电流源脉冲故障注入,不适用于百万门级大规模集成电路(very large scale integration,VLSI)。针对该问题,提出了一种从器件高层行为模型注入单粒子翻转故障的方法,并基于8051 IP核进行了单粒子一位翻转和连续两位翻转的仿真和实验比较。研究结果表明,单粒子翻转故障可直接注入到器件的高层来评估系统的抗单粒子性能。
