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A STUDY OF SILICON AVALANCHE COLD MICRO-CATHODE USING ULTRA-SHALLOW PN+ JUNCTION
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作者 Li Qiong, Tang Shihao, Yaun Meiying, Xue Zheng, Xu Jingang Department of Electronics Science and Technology East China Normal University, Shanghai 200062 China Lin ChengluShanghai Institute of Metallurgy, Academia Sinica Chang Ning Road 865, Shanghai 200050 China Zhang Duan Wu Junlei Shanghai Vacuum Electrical Device Ltd. Jiao Zhou Road 485, Shanghai 200040 China 《真空科学与技术学报》 EI CAS CSCD 1992年第Z1期239-242,共4页
The structure, fabrication and emission characteristics of a silicon cold micro-cathode using ultra-shallow PN+ junction are presented. Implantation of As+ with a energy around 12 kev, rapid thermal annealing combined... The structure, fabrication and emission characteristics of a silicon cold micro-cathode using ultra-shallow PN+ junction are presented. Implantation of As+ with a energy around 12 kev, rapid thermal annealing combined with argon sputtering are used for forming ultra-shallow pn+ junction, whose depth is lower than 30nm. In a vacuum system Ⅰ-Ⅴcharacteristics were measured. The stability problem which was found in the devices testing is also discussed in this paper. 展开更多
关键词 JUNCTION A STUDY of silicon AVALANCHE COLD MICRO-CATHODE USING ULTRA-SHALLOW PN
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Improvement of silicon etching resolution using the confined etchant layer technique
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作者 Zu, YB Xie, L +3 位作者 Tian, ZW Xie, ZX Mu, JQ Mao, BW 《Chinese Science Bulletin》 SCIE EI CAS 1997年第15期1318-1319,共2页
WHEN scanning electrochemical microscopy (SECM) with feedback mode is used to etchcertain surface, the etchant molecules generated at a microelectrode diffuse to the surface andreact therein with the surface species, ... WHEN scanning electrochemical microscopy (SECM) with feedback mode is used to etchcertain surface, the etchant molecules generated at a microelectrode diffuse to the surface andreact therein with the surface species, resulting in local etching pattern. It is noted that theetching resolution of SECM is dominantly determined by the size of the microelectrode.However, many experimental results have shown the significant influence of the lateral diffu-sion of etchant on the etching resolution. Therefore, a thin diffusion layer of the 展开更多
关键词 AS SECM Improvement of silicon etching resolution using the confined etchant layer technique CELT
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