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Oxygen vacancy formation and migration in Sr- and Mg-doped LaGaO_3:a density functional theory study
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作者 张洁 梁二军 +1 位作者 孙强 贾瑜 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第4期451-457,共7页
Oxygen vacancy formation and migration in La0.9Sr0.1Ga0.8Mg0.2O3-5 (LSGM) with various crystal symmetries (cubic, rhombohedral, orthorhombic, and monoclinic) are studied by employing first-principles calculations ... Oxygen vacancy formation and migration in La0.9Sr0.1Ga0.8Mg0.2O3-5 (LSGM) with various crystal symmetries (cubic, rhombohedral, orthorhombic, and monoclinic) are studied by employing first-principles calculations based on density functional theory (DFT). It is shown that the cubic LSGM has the smallest band gap, oxygen vacancy formation energy, and migration barrier, while the other three structures give rise to much larger values for these quantities, implying the best oxygen ion conductivity of the cubic LSGM among the four crystal structures. In out calculations, one oxygen vacancy migration pathway is considered in the cubic and rhombohedral structures due to all the oxygen sites being equivalent in them, while two vacancy migration pathways with different migration barriers are found in the orthorhombic and monoclinic symmetries owing to the existence of nonequivalent O1 and 02 oxygen sites. The migration energies along the migration pathway linking the two 02 sites are obviously lower than those along the pathway linking the O1 and 02 sites. Considering the phase transitions at high temperatures, the results obtained in this paper can not only explain the experimentally observed different behaviours of the oxygen ionic conductivity of LSGM with different symmetries, but also predict the rational crystal structures of LSGM for solid oxide fuel cell applications. 展开更多
关键词 density functional theory oxygen vacancy formation energy oxygen vacancy migration energy migration pathway
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MEASUREMENT OF VACANCY MIGRATION ENERGY BY ELECTRON IRRADIATION
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作者 WAN Farong XIAO Jimei YUAN Yi University of Science and Technology Beijing,Beijing,China Lecturer Department of Material Physics,University of Science and Technology Beijing,Beijing 100083,China 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1990年第5期372-374,共3页
A method together with a new formula were developed for measuring the vacancy migration energy on HVEM considering the effect of surface sink of specimen on point defects.The va- cancy migration energy may be calculat... A method together with a new formula were developed for measuring the vacancy migration energy on HVEM considering the effect of surface sink of specimen on point defects.The va- cancy migration energy may be calculated through the loop growth rate under electron irradiation at various temperatures. 展开更多
关键词 electron irradiation damage vacancy migration energy interstitial loop
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