The thermal emittance of Cr film, as an IR reflector, was investigated for the use in SSAC. The Cr thin films with different thicknesses were deposited on silicon wafers, optical quartz and stainless steel substrates ...The thermal emittance of Cr film, as an IR reflector, was investigated for the use in SSAC. The Cr thin films with different thicknesses were deposited on silicon wafers, optical quartz and stainless steel substrates by cathodic arc ion plating technology as a metallic IR reflector layer in SSAC. The thickness of Cr thin films was optimized to achieve the minimum thermal emittance. The effects of structural, microstructural, optical, surface and cross-sectional morphological properties of Cr thin films were investigated on the emittance. An optimal thickness about 450 nm of the Cr thin film for the lowest total thermal emittance of 0.05 was obtained. The experimental results suggested that the Cr metallic thin film with optimal thickness could be used as an effective infrared reflector for the development of SSAC structure.展开更多
利用真空反应蒸发镀膜技术在PET(聚对苯二甲酸乙二醇酯)表面沉积AlO_(x)+Al+AlO_(x)三层镀层,通过改进传统蒸发镀膜设备,增添匀气管,控制氧气通入位置及流量,研究了氧气流量对膜层形貌、膜层结合力和阻隔性的影响。采用扫描电子显微镜...利用真空反应蒸发镀膜技术在PET(聚对苯二甲酸乙二醇酯)表面沉积AlO_(x)+Al+AlO_(x)三层镀层,通过改进传统蒸发镀膜设备,增添匀气管,控制氧气通入位置及流量,研究了氧气流量对膜层形貌、膜层结合力和阻隔性的影响。采用扫描电子显微镜、能谱仪、3M标准胶带、透氧仪等测试仪器对膜层形貌和表层元素进行了表征和分析,并得到最佳工艺条件。结果表明:改进设备后沉积的AlO_(x)+Al+AlO_(x)/PET复合膜,可以有效的提高薄膜的阻隔性、致密性以及镀层与薄膜间的结合力。在本底真空8×10^(-4)Pa、反应气压1×10^(-2)Pa、电流80 A、过渡层氧气流量50 m L/min、盖层充气流量100 m L/min等工艺下蒸镀的AlO_(x)+Al+AlO_(x)/PET复合膜,膜层薄膜的结合力为1.52 N/mm,氧气透过率为1.1 cm^(3)/(m^(2)·day·atm),与传统铝膜相比,结合力提高2倍,阻隔性提高4.5倍。展开更多
基金Funded by the National Natural Science Foundation of China(No.51402208)the Project by State Key Laboratory of Advanced Technology for Materials Synthesis and Processing(Wuhan University of Technology)(No.2016-KF-11)
文摘The thermal emittance of Cr film, as an IR reflector, was investigated for the use in SSAC. The Cr thin films with different thicknesses were deposited on silicon wafers, optical quartz and stainless steel substrates by cathodic arc ion plating technology as a metallic IR reflector layer in SSAC. The thickness of Cr thin films was optimized to achieve the minimum thermal emittance. The effects of structural, microstructural, optical, surface and cross-sectional morphological properties of Cr thin films were investigated on the emittance. An optimal thickness about 450 nm of the Cr thin film for the lowest total thermal emittance of 0.05 was obtained. The experimental results suggested that the Cr metallic thin film with optimal thickness could be used as an effective infrared reflector for the development of SSAC structure.
文摘利用真空反应蒸发镀膜技术在PET(聚对苯二甲酸乙二醇酯)表面沉积AlO_(x)+Al+AlO_(x)三层镀层,通过改进传统蒸发镀膜设备,增添匀气管,控制氧气通入位置及流量,研究了氧气流量对膜层形貌、膜层结合力和阻隔性的影响。采用扫描电子显微镜、能谱仪、3M标准胶带、透氧仪等测试仪器对膜层形貌和表层元素进行了表征和分析,并得到最佳工艺条件。结果表明:改进设备后沉积的AlO_(x)+Al+AlO_(x)/PET复合膜,可以有效的提高薄膜的阻隔性、致密性以及镀层与薄膜间的结合力。在本底真空8×10^(-4)Pa、反应气压1×10^(-2)Pa、电流80 A、过渡层氧气流量50 m L/min、盖层充气流量100 m L/min等工艺下蒸镀的AlO_(x)+Al+AlO_(x)/PET复合膜,膜层薄膜的结合力为1.52 N/mm,氧气透过率为1.1 cm^(3)/(m^(2)·day·atm),与传统铝膜相比,结合力提高2倍,阻隔性提高4.5倍。
