Change in valency of Nb-oxide in MnO-SiO_2-Nb_2O_5 system was studied with the electrochemical method using ZrO_2 as the solid electrolyte.Thermodynamic analysis has shown that the only possible reaction that could ta...Change in valency of Nb-oxide in MnO-SiO_2-Nb_2O_5 system was studied with the electrochemical method using ZrO_2 as the solid electrolyte.Thermodynamic analysis has shown that the only possible reaction that could take place at the working elec- trode is:2(Nb_2O_5)=2(Nb_2O_4)+O_2 with the a_0 values experimentally evaluated,values of a Nb_2O:/a Nb_2O:were calculated and isoactivity-ratio curves drawn in MnO-SiO_2-Nb_2O_5 triangles at 1418 and 1585K.The simultaneous existence of tetra-and penta-valent Nb mineral constituents in industrial Nb-bearing slags was thus verified experimentally.展开更多
For pseudocapacitive electrode materials(PseEMs),despite much progress having been made in achieving both high power density and high energy density,a general strategy to guide the enhancement of intrinsic capacitive ...For pseudocapacitive electrode materials(PseEMs),despite much progress having been made in achieving both high power density and high energy density,a general strategy to guide the enhancement of intrinsic capacitive properties of PseEMs remains lacking.Here,we demonstrate a universal chargecompensating strategy to improve the charge-storage capability of PseEMs intrinsically:ⅰ) in the electrolyte with anion as charge carriers(such as OH-),reducing the multivalent cations of PseEMs into lower valences could create more reversible low-to-high valence redox cou ples to promote the intercalation of the anions;ⅱ) in the electrolytes with cation as charge carriers(such as H^(+),Li^(+),Na^(+)),oxidizing the multivalent cations of PseEMs into higher valences could introduce more reversible high-to-low valence redox couples to promote the intercalation of the cations.And we demonstrated that the improved intrinsic charge-storage capability for PseEMs originates from the increased Faradaic charge storage sites.展开更多
The technological advances in Lithium-ion batteries have created many new applications, including electric vehicles. In this short note, we shall explain in simple terms the basic physics why and how it is possible to...The technological advances in Lithium-ion batteries have created many new applications, including electric vehicles. In this short note, we shall explain in simple terms the basic physics why and how it is possible to have high energy capacity in Lithium-ion batteries. However, heating has been a common problem and without appropriate design, they might give fire and explosion as reported.展开更多
Resistive switching random access memories(RRAM)have been considered to be promising for future information technology with applications for non-volatile memory,logic circuits and neuromorphic computing.Key performanc...Resistive switching random access memories(RRAM)have been considered to be promising for future information technology with applications for non-volatile memory,logic circuits and neuromorphic computing.Key performances of those resistive devices are approaching the realistic levels for production.In this paper,we review the progress of valence change type memories,including relevant work reported by our group.Both electrode engineering and in-situ transmission electron microscopy(TEM)high-resolution observation have been implemented to reveal the influence of migration of oxygen anions/vacancies on the resistive switching effect.The understanding of resistive memory mechanism is significantly important for device applications.展开更多
文摘Change in valency of Nb-oxide in MnO-SiO_2-Nb_2O_5 system was studied with the electrochemical method using ZrO_2 as the solid electrolyte.Thermodynamic analysis has shown that the only possible reaction that could take place at the working elec- trode is:2(Nb_2O_5)=2(Nb_2O_4)+O_2 with the a_0 values experimentally evaluated,values of a Nb_2O:/a Nb_2O:were calculated and isoactivity-ratio curves drawn in MnO-SiO_2-Nb_2O_5 triangles at 1418 and 1585K.The simultaneous existence of tetra-and penta-valent Nb mineral constituents in industrial Nb-bearing slags was thus verified experimentally.
基金supported by the National Natural Science Foundation of China(51972146,52072150)。
文摘For pseudocapacitive electrode materials(PseEMs),despite much progress having been made in achieving both high power density and high energy density,a general strategy to guide the enhancement of intrinsic capacitive properties of PseEMs remains lacking.Here,we demonstrate a universal chargecompensating strategy to improve the charge-storage capability of PseEMs intrinsically:ⅰ) in the electrolyte with anion as charge carriers(such as OH-),reducing the multivalent cations of PseEMs into lower valences could create more reversible low-to-high valence redox cou ples to promote the intercalation of the anions;ⅱ) in the electrolytes with cation as charge carriers(such as H^(+),Li^(+),Na^(+)),oxidizing the multivalent cations of PseEMs into higher valences could introduce more reversible high-to-low valence redox couples to promote the intercalation of the cations.And we demonstrated that the improved intrinsic charge-storage capability for PseEMs originates from the increased Faradaic charge storage sites.
文摘The technological advances in Lithium-ion batteries have created many new applications, including electric vehicles. In this short note, we shall explain in simple terms the basic physics why and how it is possible to have high energy capacity in Lithium-ion batteries. However, heating has been a common problem and without appropriate design, they might give fire and explosion as reported.
文摘Resistive switching random access memories(RRAM)have been considered to be promising for future information technology with applications for non-volatile memory,logic circuits and neuromorphic computing.Key performances of those resistive devices are approaching the realistic levels for production.In this paper,we review the progress of valence change type memories,including relevant work reported by our group.Both electrode engineering and in-situ transmission electron microscopy(TEM)high-resolution observation have been implemented to reveal the influence of migration of oxygen anions/vacancies on the resistive switching effect.The understanding of resistive memory mechanism is significantly important for device applications.
