Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI_(2) van der Waals heterostructure

Valley-polarized quantum anomalous Hall effect(VQAHE), combined nontrivial band topology with valleytronics,is of importance for both fundamental sciences and emerging applications. However, the experimental realization of this property is challenging. Here, by using first-principles calculations and modal analysis, we predict a mechanism of producing VQAHE in two-dimensional ferromagnetic van der Waals germanene/MnI_(2) heterostructure. This heterostructure exhibits both valley anomalous Hall effect and VQAHE due to the joint effects of magnetic exchange effect and spin–orbital coupling with the aid of anomalous Hall conductance and chiral edge state. Moreover interestingly, through the electrical modulation of ferroelectric polarization state in In_(2)Se_(3), the germanene/Mn I_(2)/In_(2)Se_(3) heterostructure can undergo reversible switching from a semiconductor to a metallic behavior. This work offers a guiding advancement for searching for VQAHE in ferromagnetic van der Waals heterostructures and exploiting energy-efficient devices based on the VQAHE.

Spin direction dependent quantum anomalous Hall effect in two-dimensional ferromagnetic materials

We propose a scheme for realizing the spin direction-dependent quantum anomalous Hall effect(QAHE)driven by spin-orbit couplings(SOC)in two-dimensional(2D)materials.Based on the sp^(3)tight-binding(TB)model,we find that these systems can exhibit a QAHE with out-of-plane and in-plane magnetization for the weak and strong SOC,respectively,in which the mechanism of quantum transition is mainly driven by the band inversion of p_(x,y)/p_(z)orbitals.As a concrete example,based on first-principles calculations,we realize a real material of monolayer 1T-SnN_(2)/PbN_(2)exhibiting the QAHE with in-plane/out-of-plane magnetization characterized by the nonzero Chern number C and topological edge states.These findings provide useful guidance for the pursuit of a spin direction-dependent QAHE and hence stimulate immediate experimental interest.

Integer quantum Hall effect in Kekulé-patterned graphene

Y-shaped Kekulébond textures in a honeycomb lattice on a graphene-copper superlattice have recently been experimentally revealed.In this paper,the effects of such a bond modulation on the transport coefficients of Kekulé-patterned graphene are investigated in the presence of a perpendicular magnetic field.Analytical expressions are derived for the Hall and longitudinal conductivities using the Kubo formula.It is found that the Y-shaped Kekulébond texture lifts the valley degeneracy of all Landau levels except that of the zero mode,leading to additional plateaus in the Hall conductivity accompanied by a split of the corresponding peaks in the longitudinal conductivity.Consequently,the Hall conductivity is quantized as±ne^(2)/h for n=2,4,6,8,10,...,excluding some plateaus that disappear due to the complete overlap of the Landau levels of different cones.These results also suggest that DC Hall conductivity measurements will allow us to determine the Kekulébond texture amplitude.

Quantum anomalous Hall effect in twisted bilayer graphene quasicrystal

The nontrivial topology is investigated in a dodecagonal quasicrystal made of 30° twisted bilayer graphene (TBG). Based on tight-binding model with both exchange field and Rashba spin–orbit coupling, the topological index, chiral edge states, and quantum conductance are calculated to distinguish its unique topological phase. A high Bott index (B = 4) quantum anomalous Hall effect (QAHE) is identified in TBG quasicrystal, which is robust to a finite perturbation without closing the nontrivial gap. Most remarkably, we have found that the multiple Dirac cone replicas in TBG quasicrystal are only a spectra feature without generating extra chiral edge states. Our results not only propose a possible way to realize the QAHE in quasicrystal, but also identify the continuity of nontrivial topology in TBG between crystal and quasicrystal.

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.

Quantum spin Hall and quantum valley Hall effects in trilayer graphene and their topological structures

The present study pertains to the trilayer graphene in the presence of spin orbit coupling to probe the quantum spin/valley Hall effect. The spin Chern-number Cs for energy-bands of trilayer graphene having the essence of intrinsic spin-orbit coupling is analytically calculated. We find that for each valley and spin, Cs is three times larger in trilayer graphene as compared to single layer graphene. Since the spin Chern-number corresponds to the number of edge states, consequently the trilayer graphene has edge states, three times more in comparison to single layer graphene. We also study the trilayer graphene in the presence of both electric-field and intrinsic spin-orbit coupling and investigate that the trilayer graphene goes through a phase transition from a quantum spin Hall state to a quantum valley Hall state when the strength of the electric field exceeds the intrinsic spin coupling strength. The robustness of the associated topological bulk-state of the trilayer graphene is evaluated by adding various perturbations such as Rashba spin-orbit （RSO） interaction αR, and exchange-magnetization M. In addition, we consider a theoretical model, where only one of the outer layers in trilayer graphene has the essence of intrinsic spin-orbit coupling, while the other two layers have zero intrinsic spin-orbit coupling. Although the first Chern number is non-zero for individual valleys of trilayer graphene in this model, however, we find that the system cannot be regarded as a topological insulator because the system as a whole is not gaped.

The topological structure of the integral quantum Hall effect in magnetic semiconductor-superconductor hybrids

An unconventional integer quantum Hall regime was found in magnetic semiconductor-superconductor hybrids. By making use of the decomposition of the gauge potential on a U（1） principal fibre bundle over k-space, we study the topological structure of the integral Hall conductance. It is labeled by the Hopf index β and the Brouwer degree η. The Hall conductance topological current and its evolution is discussed.

Spin Chern numbers and time-reversal-symmetry-broken quantum spin Hall effect

The quantum spin Hall （QSH） effect is considered to be unstable to perturbations violating the time-reversal （TR） symmetry. We review some recent developments in the search of the QSH effect in the absence of the TR symmetry. The possibility to realize a robust QSH effect by artificial removal of the TR symmetry of the edge states is explored. As a useful tool to characterize topological phases without the TR symmetry, the spin-Chern number theory is introduced.

The quantum Hall's effect:A quantum electrodynamic phenomenon

We have applied Maxwell＇s equations to study the physics of quantum Hall＇s effect. The electromagnetic properties of this system are obtained. The Hall＇s voltage, VH ---- 27rh2ns/em, where ns is the electron number density, for a 2- dimensional system, and h ---- 27rh is the Planck＇s constant, is found to coincide with the voltage drop across the quantum capacitor. Consideration of the cyclotronic motion of electrons is found to give rise to Hall＇s resistance. Ohmic resistances in the horizontal and vertical directions have been found to exist before equilibrium state is reached. At a fundamental level, the Hall＇s effect is found to be equivalent to a resonant LCR circuit with LH = 2π m/e2ns and CH -= me2/π2h2ns satisfying the resonance condition with resonant frequency equal to the inverse of the scattering （relaxation） time, τs. The Hall＇s resistance is found to be RH = √LH/CH The Hall＇s resistance may be connected with the impedance that the electron wave experiences when it propagates in the 2-dimensional gas.

The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells

The quantum spin Hall effect （QSHE） was first realized in HgTe quantum wells （QWs）, which remain the only known two-dimensional topological insulator so far. In this paper, we have systematically studied the effect of the thickness fluctuation of HgTe QWs on the QSHE. We start with the case of constant mass with random distributions, and reveal that the disordered system can be well described by a virtual uniform QW with an effective mass when the number of components is small. When the number is infinite and corresponds to the real fluctuation, we find that the QSHE is not only robust, but also can be generated by relatively strong fluctuation. Our results imply that the thickness fluctuation does not cause backscattering, and the QSHE is robust to it.

Finite size effects on the quantum spin Hall state in HgTe quantum wells under two different types of boundary conditions

The finite size effect in a two-dimensional topological insulator can induce an energy gap Eg in the spectrum of helical edge states for a strip of finite width. In a recent work, it has been found that when the spin--orbit coupling due to bulk-inversion asymmetry is taken into account, the energy gap Eg of the edge states features an oscillating exponential decay as a function of the strip width of the inverted HgTe quantum well. In this paper, we investigate the effects of the interface between a topological insulator and a normal insulator on the finite size effect in the HgTe quantum well by means of the numerical diagonalization method. Two different types of boundary conditions, i.e., the symmetric and asymmetric geometries, are considered. It is found that due to the existence of the interface between topological insulator and normal insulator this oscillatory pattern on the exponential decay induced by bulk-inversion asymmetry is modulated by the width of normal insulator regions. With the variation of the width of normal insulator regions, the shift of the Dirac point of the edge states in the spectrum and the energy gap Eg closing point in the oscillatory pattern can occur. Additionally, the effect of the spin-orbit coupling due to structure-inversion asymmetry on the finite size effects is also investigated.

Noncommutative Quantum Hall Effect of Bilayer Systems

In this paper we study the bilayer quantum Hall （QH） effect on a noncommutative phase space （NCPS）. By using perturbation theory, we calculate the energy spectrum, eigenfunction, Hall current, and Hall conductivity of the bilayer QH system, and express them in terms of noncommutative parameters θ and θ^-, respectively. In our calculation, we assume that these parameters vary from laver to laver.

Quantum spin Hall effect in a square-lattice model under a uniform magnetic field

We study a toy square-lattice model under a uniform magnetic field. Using the Landauer Biittiker fornmla, we calculate the transport properties of the system on a two-terminal, a four-terminal and a six-terminM device. W＇e find that the quantum spin Hall （QSH） effect appears ill energy ranges where the spin-up and spin-down subsystems have different filling factors. We also study the robustness of the resulting QSH effect and find that it is robust when the Fermi levels of both spin subsystems are far away from the energy plateaus but is fragile when the Fermi level of any spin subsystem is near the energy plateaus. These results provide an example of the QSH effect with a physical origin other than time-reversal （TR） preserving spin-orbit coupling （SOC）.

Current carrying states in the disordered quantum anomalous Hall effect

In a quantum Hall effect,flat Landau levels may be broadened by disorder.However,it has been found that in the thermodynamic limit,all extended(or current carrying)states shrink to one single energy value within each Landau level.On the other hand,a quantum anomalous Hall effect consists of dispersive bands with finite widths.We numerically investigate the picture of current carrying states in this case.With size scaling,the spectrum width of these states in each bulk band still shrinks to a single energy value in the thermodynamic limit,in a power law way.The magnitude of the scaling exponent at the intermediate disorder is close to that in the quantum Hall effects.The number of current carrying states obeys similar scaling rules,so that the density of states of current carrying states is finite.Other states in the bulk band are localized and may contribute to the formation of a topological Anderson insulator.

Generalization of the theory of three-dimensional quantum Hall effect of Fermi arcs in Weyl semimetal

The quantum Hall effect(QHE),which is usually observed in two-dimensional systems,was predicted theoretically and observed experimentally in three-dimensional(3 D)topological semimetal.However,there are some inconsistencies between the theory and the experiments showing the theory is imperfect.Here,we generalize the theory of the 3 D QHE of Fermi arcs in Weyl semimetal.Through calculating the sheet Hall conductivity of a Weyl semimetal slab,we show that the 3 D QHE of Fermi arcs can occur in a large energy range and the thickness dependences of the QHE in different Fermi energies are distinct.When the Fermi energy is near the Weyl nodes,the Fermi arcs give rise to the QHE which is independent of the thickness of the slab.When the Fermi energy is not near the Weyl nodes,the two Fermi arcs form a complete Fermi loop with the assistance of bulk states giving rise to the QHE which is dependent on the sample thickness.We also demonstrate how the band anisotropic terms influence the QHE of Fermi arcs.Our theory complements the imperfections of the present theory of 3 D QHE of Fermi arcs.

Coexistence of giant Rashba spin splitting and quantum spin Hall effect in H–Pb–F

Rashba spin splitting(RSS)and quantum spin Hall effect(QSHE)have attracted enormous interest due to their great significance in the application of spintronics.In this work,we theoretically proposed a new two-dimensional(2D)material H–Pb–F with coexistence of giant RSS and quantum spin Hall effec by using the ab initio calculations.Our results show that H–Pb–F possesses giant RSS(1.21 eV·A)and the RSS can be tuned up to 4.16 e V·A by in-plane biaxial strain,which is a huge value among 2D materials.Furthermore,we also noticed that H–Pb–F is a 2D topological insulator(TI)duo to the strong spin–orbit coupling(SOC)interaction,and the large topological gap is up to 1.35 e V,which is large enough for for the observation of topological edge states at room temperature.The coexistence of giant RSS and quantum spin Hall effect greatly broadens the potential application of H–Pb–F in the field of spintronic devices.

First-principles prediction of quantum anomalous Hall effect in two-dimensional Co2Te lattice

The quantum anomalous Hall effect(QAHE) has special quantum properties that are ideal for possible future spintronic devices. However, the experimental realization is rather challenging due to its low Curie temperature and small non-trivial bandgap in two-dimensional(2D) materials. In this paper, we demonstrate through first-principles calculations that monolayer Co2Te material is a promising 2D candidate to realize QAHE in practice. Excitingly, through Monte Carlo simulations, it is found that the Curie temperature of single-layer Co2Te can reach 573 K. The band crossing at the Fermi level in monolayer Co2Te is opened when spin–orbit coupling is considered, which leads to QAHE with a sizable bandgap of Eg= 96 me V, characterized by the non-zero Chern number(C = 1) and a chiral edge state. Therefore, our findings not only enrich the study of quantum anomalous Hall effect, but also broaden the horizons of the spintronics and topological nanoelectronics applications.

Electron Monopole Duality in Quantum Hall Effect

Starting from the duality between electric and magnetic field, we have made an attempt to discuss the quantum hall effect from the consideration of magnetic monopole in view of electron monopole duality. Starting from the dual dy-namics of electric and magnetic charges, we have reformulated a consistent theory of quantum hall effect in presence of monopole. Speculating the existence of magnetic monopoles in magnetic materials (metals), we have accordingly modi-fied the parameters;like drift velocity, current density, Hamiltonian and eigen values and eigen function for harmonic oscillator;resposible to examine the quantum Hall effect in metals.

Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN_(2)CSCl MXene

Quantum anomalous Hall effect(QAHE)is an innovative topological spintronic phenomenon with dissipationless chiral edge states and attracts rapidly increasing attention.However,it has only been observed in few materials in experiments.Here,according to the first-principles calculations,we report that the MXene MoYN_(2)CSCl shows a topologically nontrivial band gap of 37.3 me V,possessing QAHE with a Chern number of C=1,which is induced by band inversion between d_(xz)and d_(yz)orbitals.Also,the topological phase transition for the MoYN_(2)CSCl can be realized via strain or by turning the magnetization direction.Remarkably,MoYN_(2)CSCl shows the nodal-line semimetal state dependent on the electron correlation U.Our findings add an experimentally accessible and tunable member to the QAHE family,which stands a chance of enriching the applications in spintronics.

Prediction of quantum anomalous Hall effect in CrI_(3)/ScCl_(2)bilayer heterostructure

Based on first-principles calculations,a two-dimensional(2D)van der Waals(vd W)bilayer heterostructure consisting of two topologically trivial ferromagnetic(FM)monolayers CrI_(3)and ScCl_(2)is proposed to realize the quantum anomalous Hall effect(QAHE)with a sizable topologically nontrivial band gap of 4.5 me V.Its topological nature is attributed to an interlayer band inversion between the monolayers and critically depends on the symmetry of the stacking configuration.We further demonstrate that the topologically nontrivial band gap can be increased nearly linearly by the application of a perpendicular external pressure and reaches 8.1 me V at 2.7 GPa,and the application of an external out-of-plane electric field can also modulate the band gap and convert the system back to topologically trivial via eliminating the band inversion.An effective model is developed to describe the topological phase evolution in this bilayer heterostructure.This work provides a new candidate system based on 2D vd W materials for realization of potential high-temperature QAHE with considerable controllability.