BiVO_(4)(BVO)is a promising material as the photoanode for use in photoelectrochemical applications.However,the high charge recombination and slow charge transfer of the BVO have been obstacles to achieving satisfacto...BiVO_(4)(BVO)is a promising material as the photoanode for use in photoelectrochemical applications.However,the high charge recombination and slow charge transfer of the BVO have been obstacles to achieving satisfactory photoelectrochemical performance.To address this,various modifications have been attempted,including the use of ferroelectric materials.Ferroelectric materials can form a permanent polarization within the layer,enhancing the separation and transport of photo-excited electron-hole pairs.In this study,we propose a novel approach by depositing an epitaxial BiFeO_(3)(BFO)thin film underneath the BVO thin film(BVO/BFO)to harness the ferroelectric property of BFO.The self-polarization of the inserted BFO thin film simultaneously functions as a buffer layer to enhance charge transport and a hole-blocking layer to reduce charge recombination.As a result,the BVO/BFO photoanodes showed more than 3.5 times higher photocurrent density(0.65 mA cm^(-2))at 1.23 V_(RHE)under the illumination compared to the bare BVO photoanodes(0.18 m A cm^(-2)),which is consistent with the increase of the applied bias photon-to-current conversion efficiencies(ABPE)and the result of electrochemical impedance spectroscopy(EIS)analysis.These results can be attributed to the self-polarization exhibited by the inserted BFO thin film,which promoted the charge separation and transfer efficiency of the BVO photoanodes.展开更多
过氧化氢(H_(2)O_(2))作为一种环境友好的化学品被广泛应用于多个领域。相对于传统的蒽醌法,基于双电子水氧化过程电催化制备H_(2)O_(2)具备反应过程简单、毒副产物少、可原位合成等优点。采用旋涂法制备掺杂不同浓度、不同种类金属离子...过氧化氢(H_(2)O_(2))作为一种环境友好的化学品被广泛应用于多个领域。相对于传统的蒽醌法,基于双电子水氧化过程电催化制备H_(2)O_(2)具备反应过程简单、毒副产物少、可原位合成等优点。采用旋涂法制备掺杂不同浓度、不同种类金属离子(Cr^(3+)、In^(3+)、Sb^(3+))的钒酸铋(BiVO_(4))薄膜,并系统探究其电催化氧化水产H_(2)O_(2)性能。实验结果表明,掺杂Cr^(3+)可以提高BiVO_(4)的电流密度,其中3%Cr:BiVO_(4)在3.08 V vs RHE偏压下的电流密度约为29 mA/cm^(2);掺杂In^(3+)和Sb^(3+)可以提高BiVO_(4)对双电子水氧化反应的选择性。展开更多
基金supported by the program of Future Hydrogen Original Technology Development(2021M3I3A1084747),through the National Research Foundation of Korea(NRF)funded by the Korean government(Ministry of Science and ICT(MSIT))by the NRF grant funded by the Korea government(MSIT)(No.2020R1A2C1005590)。
文摘BiVO_(4)(BVO)is a promising material as the photoanode for use in photoelectrochemical applications.However,the high charge recombination and slow charge transfer of the BVO have been obstacles to achieving satisfactory photoelectrochemical performance.To address this,various modifications have been attempted,including the use of ferroelectric materials.Ferroelectric materials can form a permanent polarization within the layer,enhancing the separation and transport of photo-excited electron-hole pairs.In this study,we propose a novel approach by depositing an epitaxial BiFeO_(3)(BFO)thin film underneath the BVO thin film(BVO/BFO)to harness the ferroelectric property of BFO.The self-polarization of the inserted BFO thin film simultaneously functions as a buffer layer to enhance charge transport and a hole-blocking layer to reduce charge recombination.As a result,the BVO/BFO photoanodes showed more than 3.5 times higher photocurrent density(0.65 mA cm^(-2))at 1.23 V_(RHE)under the illumination compared to the bare BVO photoanodes(0.18 m A cm^(-2)),which is consistent with the increase of the applied bias photon-to-current conversion efficiencies(ABPE)and the result of electrochemical impedance spectroscopy(EIS)analysis.These results can be attributed to the self-polarization exhibited by the inserted BFO thin film,which promoted the charge separation and transfer efficiency of the BVO photoanodes.
文摘过氧化氢(H_(2)O_(2))作为一种环境友好的化学品被广泛应用于多个领域。相对于传统的蒽醌法,基于双电子水氧化过程电催化制备H_(2)O_(2)具备反应过程简单、毒副产物少、可原位合成等优点。采用旋涂法制备掺杂不同浓度、不同种类金属离子(Cr^(3+)、In^(3+)、Sb^(3+))的钒酸铋(BiVO_(4))薄膜,并系统探究其电催化氧化水产H_(2)O_(2)性能。实验结果表明,掺杂Cr^(3+)可以提高BiVO_(4)的电流密度,其中3%Cr:BiVO_(4)在3.08 V vs RHE偏压下的电流密度约为29 mA/cm^(2);掺杂In^(3+)和Sb^(3+)可以提高BiVO_(4)对双电子水氧化反应的选择性。
