Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations(TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.

Temperature-mediated structural evolution of vapor–phase deposited cyclosiloxane polymer thin films for enhanced mechanical properties and thermal conductivity

Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applications on substrate materials with low melting points.We report a new synthesis route for PDC coatings using initiated chemical vapor deposited poly(1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane)(pV_3D_3) as the precurs or.We investigated the changes in siloxane moieties and the network topology,and proposed a three-stage mechanism for the thermal annealing process.The rise of the connectivity number for the structures obtained at increased annealing temperatures was found with strong correlation to the enhanced mechanical properties and thermal conductivity.Our PDC films obtained via annealing at 850℃ exhibit at least 14.6% higher hardness than prior reports for PDCs synthesized below 1100℃.Furthermore,thermal conductivity up to 1.02 W(mK)^(-1) was achieved at the annealing temperature as low as 700℃,which is on the same order of magnitude as PDCs obtained above 1100℃.Using minimum thermal conductivity models,we found that the thermal transport is dominated by diffusons in the films below the percolation of rigidity,while ultra-short mean-free path phonons contribute to the thermal conductivity of the films above the percolation threshold.The findings of this work provide new insights for the development of wear-resistant and thermally conductive PDC thin films for durable protection coatings.

Experimental Study of the Distribution of Au and Cu in Aqueous Vapor Phase at High Temperatures and Its Role on Ore-forming Transportation

This study focuses on experiments of Au and Cu dissolved in vapor phase in hydrothermal fluids. Experiments prove that Au and Cu can re-distribute in vapor phase and liquid phase during separation of Au- and Cu-bearing supercritical fluids to vapor and liquid phases. These experimental results can illustrate some ore geneses, where boiling phenomena of ore fluids were found. Au- and Cubearing NaHCO3-HCl solutions were heated up to more than 350℃ in the main vessel, and then passed through a phase separator in a temperature range from 250℃ to 300℃, separated into vapor and liquid phases. We collected and analyzed the liquid and vapor samples separately, and found that Au and Cu dissolved and distributed in vapor phase. In some cases, the concentrations of Au and Cu in vapor are higher than those in liquid phase. Those experiments are used to interpret field observations of fluid inclusion data of some Au and Cu deposits, and demonstrate that some Au and Cu ore deposits are derived from metals transportation in vapor phase.

Application of halide vapor phase epitaxy for the growth of ultrawide band gap Ga_2O_3

Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga_2O_3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga_2O_3 substrates and for the fabrication of high power β-Ga_2O_3 devices.

Hydride vapor phase epitaxy for gallium nitride substrate

Due to the remarkable growth rate compared to another growth methods for gallium nitride(GaN)growth,hydride vapor phase epitaxy(HVPE)is now the only method for mass product GaN substrates.In this review,commercial HVPE systems and the GaN crystals grown by them are demonstrated.This article also illustrates some innovative attempts to develop homebuilt HVPE systems.Finally,the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.

Growth of β-Ga_2O_3 Films on Sapphire by Hydride Vapor Phase Epitaxy

Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.

Preparation of nanometer δ- and β-bismuth trioxide by vacuum vapor-phase oxidation

A stable δ- and β-bismuth trioxide was prepared at room temperature by vacuum vapor-phase oxidation. The average crystal size of products was 14.6 nm (by XRD), the d(0.5) value was in the range from 62 nm to 69 nm, and geometric standard deviation(GSD) was from 1.42 to 1.64. The results show that δ-Bi2O3 is formed when quenching rates is rapid and β-Bi2O3 is formed when it is slow. The size of grains increases with rising reaction temperature, flow rate of carrier gas, residual pressure of system and longer growing time of grains.

Optical properties of ZnO and Mn-doped ZnO nanocrystals by vapor phase transport processes

In this paper we investigated the optical properties of ZnO and Mn doped ZnO nanocrystals that were fabricated by a vapor phase transport growth process, using zinc acetate dihydrate with or without Mn in a constant O2/Ar mixture gas flowing through the furnace at 400600℃, respectively. The as grown ZnO nanocrystals are homogeneous with a mean size of 19 nm observed by scanning electron microscope（SEM）. The optical characteristics were analyzed by absorption spectra and photoluminescence（PL） spectra at room-temperature. For ZnO nanocrystals, a strong and predominant UV emission peaked at 377 nm was found in the PL spectra. For Mn doped ZnO nanocrystals, in addition to the strong UV emission, a strong blue emission peaked at 435 nm was observed as well. By doping Mn ions, the major UV emission shifts from 377 nm to 408 nm, showing that Mn ions were not only incorporated into ZnO Ncs, but also introduced an impurity level in the bandgap. Moreover, with the concentration of Mn increasing, the relative intensities of the two emissions change largely, and the photoluminescence mechanism of them is discussed.

Growth and doping of bulk GaN by hydride vapor phase epitaxy

Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based devices.The progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this article.The growth technology and precursors of each type of doping are introduced.Besides,the influence of doping on the optical and electrical properties of GaN are presented in detail.Furthermore,the problems caused by doping,as well as the methods to solve them are also discussed.At last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.

Vapor-Phase Transport Synthesis of MnSAPO-34 and Its Catalytic Properties

MnSAPO-34 molecular sieves were synthesized by vapor-phase transport(VPT) method using triethylamine(Et3N) as a structure directing agent(SDA),and were characterized by XRD,BET,SEM,UV-Vis,FT-IR,and TG analyses.The influence of the zeolite crystallization conditions and the dry-gel composition were investigated.The results showed that the synthesis conditions had an effect on the crystalline phase.Pure MnSAPO-34 had been obtained when it was crystallized at 140℃ for 18 hours.The ratio of MnO/Al2O3 in the starting gel ranging from 0.1 to 0.2 resulted in pure MnSAPO-34 with a CHA topology.Beyond this scope,MnSAPO-5 with an AFI topology structure was obtained as an impurity substance.UV-Vis spectroscopy and FT-IR spectroscopy study indicated that manganese was incorporated into the framework of the molecular sieve.The catalytic performance of MnSAPO-34 molecular sieve was tested by ketalization reaction of 1,2-propanediol with cyclohexanone.High yield of cyclohexanone-1,2-propanediol ketal was obtained.

Vapor Phase Polymerization Deposition Conducting Polymer Nanocomposites on Porous Dielectric Surface as High Performance Electrode Materials

We report chemical vapor phase polymerization(VPP) deposition of poly(3,4-ethylenedioxythiophene)(PEDOT) and PEDOT/graphene on porous dielectric tantalum pentoxide(Ta_2O_5) surface as cathode films for solid tantalum electrolyte capacitors. The modified oxidant/oxidant-graphene films were first deposited on Ta_2O_5 by dip-coating, and VPP process was subsequently utilized to transfer oxidant/oxidant-graphene into PEDOT/PEDOT-graphene films. The SEM images showed PEDOT/PEDOT-graphene films was successfully constructed on porous Ta_2O_5 surface through VPP deposition, and a solid tantalum electrolyte capacitor with conducting polymer-graphene nano-composites as cathode films was constructed. The high conductivity nature of PEDOT-graphene leads to resistance decrease of cathode films and lower contact resistance between PEDOT/graphene and carbon paste. This nano-composite cathode films based capacitor showed ultralow equivalent series resistance(ESR) ca. 12 m? and exhibited excellent capacitance-frequency performance, which can keep 82% of initial capacitance at 500 KHz. The investigation on leakage current revealed that the device encapsulation process has no influence on capacitor leakage current, indicating the excellent mechanical strength of PEDOT/PEDOT-gaphene films. This high conductivity and mechanical strength of graphene-based polymer films shows promising future for electrode materials such as capacitors, organic solar cells and electrochemical energy storage devices.

Synthesis of 4-Phenylphthalonitrile by Vapor-Phase Catalytic Ammoxidation of Intermediate 4-Phenyl-<i>o</i>-Tolunitrile: Reaction Kinetics

Kinetic regularities of 4-phenyl-o-tolunitrile ammoxidation on V-Sb-Bi-Zr/γ-Al2O3 oxide catalyst in the temperature interval 633 - 673 K have been studied. It has been established that rates of conversion of 4-phenyl-o-tolu- nitrile into the aimed 4-phenylphthalonitrile and CO2 are described by half-order equation on concentration of substratum and to be independent of the oxygen and ammonia partial pressures. It has been revealed that formation of 4-phenylphthalimide from byproducts is due to hydrolysis of 4-phenylphthalonitrile;carbon dioxide is produced by oxidation of 4-phenyl-o-tolunitrile and decarboxylation of 4-phenylphthalimide, and 4-phenylben- zonitrile is produced from 4-phenyl-o-tolunitrile and 4-phenylphthalimide.

Availability of MCNP & MATLAB for reconstructing the water-vapor two-phase flow pattern in neutron radiography

The China Advanced Research Reactor (CARR) is scheduled to be operated in the autumn of 2008.In this paper,we report preparations for installing the neutron radiography instrument (NRI) and for utilizing it efficiently. The 2-D relative neutron intensity profiles for the water-vapor two-phase flow inside the robe were obtained using the MCNP code without influence of y-ray and electronic-noise.The MCNP simulation of the 2-D neutron intensity profile for the water-vapor two-phase flow was demonstrated.The simulated 2-D neutron intensity profiles could be used as the benchmark data base by calibrating part of the data measured by the CARR-NRI.The 3-D objective images allow us to understand the flow pattern more clearly and it is reconstructed using the MATLAB through the threshold transformation techniques.And thus it is concluded that the MCNP code and the MATLAB are very useful for constructing the benchmark data base for the investigation of the water-vapor two-phase flow using the CARR-NRI.

The fabrication of AlN by hydride vapor phase epitaxy

Aluminum nitride(AlN)is the promising substrates material for the epitaxial growth ofⅢ-nitrides devices,such as high-power,high-frequency electronic,deep ultraviolet optoelectronics and acoustic devices.However,it is rather difficult to obtain the high quality and crack-free thick AlN wafers because of the low surface migration of Al adatoms and the large thermal and lattice mismatches between the foreign substrates and AlN.In this work,the fabrication of AlN material by hydride vapor phase epitaxy(HVPE)was summarized and discussed.At last,the outlook of the production of AlN by HVPE was prospected.

Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy

A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is reported.The x-ray rocking curves(XRCs)indicate that the full width at half maximum(FWHM)of(0002)plane for AlN films using N2 as nitrogen source is generally smaller than that using NH3.Optical microscope and atomic force microscope(AFM)results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10µm using N2 as the nitrogen source compared to that using NH3.Compared with one-step growth,two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N2 as the nitrogen source.These investigations reveal that using N2 as nitrogen source in HVPE growth of AlN is immature at present,but exhibits great potential.

Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy

Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of the samples are characterized by atomic force microscopy. The full width at half maximum （FWHM） of the HVPE sample shows a W-shape and that of the MOVPE sample shows an M-shape plane with the degree of 0 in the high-resolution x-ray diffraction （HRXRD） results. The surface morphology attributes to this significant anisotropic. HRXRD reveals that there is a significant reduction in the FWHM, both on-axis and off-axis for HVPE GaN are compared with the MOVPE template. The decrease of the FWHM of E2 （high） Raman scat tering spectra further indicates the improvement of crystal quality after HVPE. By comparing the results of secondary- ion-mass spectroscope and photoluminescence spectrum of the samples grown by HVPE and MOVPE, we propose that C-involved defects are originally responsible for the yellow luminescence.

Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films have been investigated.With the increase of theⅤ/Ⅲratio,the growth mode of Al N grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology.Atomic force microscopy(AFM),scanning electron microscopy(SEM)and Raman analysis show that cracks appear due to tensile stress in the films with the lowestⅤ/Ⅲratio and the highestⅤ/Ⅲratio with a thickness of about 3μm.In contrast,under the mediumⅤ/Ⅲratio growth condition,the porous film can be obtained.Even when the thickness of the porous Al N film is further increased to 8μm,the film remains porous and crack-free,and the crystal quality is improved.

Kinetic Mass Transfer Between Non-aqueous Phase Liquid and Gas During Soil Vapor Extraction

The mass transfer between non-aqueous phase liquid(NAPL) phase and soil gas phase in soil vapor extraction(SVE) process has been investigated by one-dimensional venting experiments. During quasi-steady volatilization of three single-component NAPLs in a sandy soil, constant initial lumped mass transfer coefficient (λgN,0) canbe obtained if the relative saturation (ξ) between NAPL phase and gas phase is higher than a critical value (ξc), andthe lumped mass transfer coefficient decreases with ξ when ξ＜ξc. It is also shown that the lumped mass transfercoefficient can be increased by blending porous micro-particles into the sandy soil because of the increasing of theinterfacial area.