Deposition of diamond thin films on tungsten wire substrate with the gas mixture of acetone and hydrogen by using bias-enhanced hot filament chemical vapor deposition（CVD）with the tantalum wires being optimized arra...Deposition of diamond thin films on tungsten wire substrate with the gas mixture of acetone and hydrogen by using bias-enhanced hot filament chemical vapor deposition（CVD）with the tantalum wires being optimized arranged is investigated.The self-supported diamond tubes are obtained by etching away the tungsten substrates.The quality of the diamond film before and after the removal of substrates is observed by scanning electron microscope（SEM）and Raman spectrum.The results show that the cylindrical diamond tubes with good quality and uniform thickness are obtained on tungsten wires by using bias enhanced hot filament CVD.The compressive stress in diamond film formed during the deposition is released after the substrate etches away by mixture of H2O2 and NH4 OH.There is no residual stress in diamond tube after substrate removal.展开更多
Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostruct...Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.展开更多
CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposit...CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.展开更多
The TiAl-based alloys sheet with 150 mm×100 mm×0.4 mm and the TiAl/Nb laminated composites with 150 mm×100 mm×0.2 mm were fabricated by using electron beam-physical vapor deposition(EB-PVD) method,...The TiAl-based alloys sheet with 150 mm×100 mm×0.4 mm and the TiAl/Nb laminated composites with 150 mm×100 mm×0.2 mm were fabricated by using electron beam-physical vapor deposition(EB-PVD) method, respectively. The microstructure and properties of the sheet were investigated by AFM, SEM and EDS. The results show that the TiAl based alloys sheet has a good surface quality, and its microstructure is columnar crystal. The component of the alloys indicates a regular and periodical gradient change which leads to the spontaneous delamination along the normal direction of substrate. In the TiAl/Nb laminated composites alternating overlaid by TiAl of 24 layers and Nb of 23 layers, the interface of each layer evenly distributed throughout the cross-section is transparent, and the interlayer spacing is about 8μm. The component of TiAl layers also changes regularly along the normal direction of substrate, but no delamination phenomenon is found. The TiAl/Nb laminated composites have better ductility than the TiAl-based alloys sheet.展开更多
基金Selected from Proceedings of the 7th International Conference on Frontiers of Design and Manufacturing(ICFDM'2006)This project is supported by National Natural Science Foundation of China(No.50475026,No.50275095,No.50575135).
文摘Deposition of diamond thin films on tungsten wire substrate with the gas mixture of acetone and hydrogen by using bias-enhanced hot filament chemical vapor deposition（CVD）with the tantalum wires being optimized arranged is investigated.The self-supported diamond tubes are obtained by etching away the tungsten substrates.The quality of the diamond film before and after the removal of substrates is observed by scanning electron microscope（SEM）and Raman spectrum.The results show that the cylindrical diamond tubes with good quality and uniform thickness are obtained on tungsten wires by using bias enhanced hot filament CVD.The compressive stress in diamond film formed during the deposition is released after the substrate etches away by mixture of H2O2 and NH4 OH.There is no residual stress in diamond tube after substrate removal.
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002the National Natural Sciences Foundation of China under Grant Nos 61574108,61334002,61474086 and 61306017
文摘Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.
基金Supported by the Key Program of the National Natural Science Foundation of China under Grant No 61334009the National High Technology Research and Development Program of China under Grant No 2014AA032604
文摘CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.
基金Projects(90205034, 90405016) supported by the National Natural Science Foundation of China
文摘The TiAl-based alloys sheet with 150 mm×100 mm×0.4 mm and the TiAl/Nb laminated composites with 150 mm×100 mm×0.2 mm were fabricated by using electron beam-physical vapor deposition(EB-PVD) method, respectively. The microstructure and properties of the sheet were investigated by AFM, SEM and EDS. The results show that the TiAl based alloys sheet has a good surface quality, and its microstructure is columnar crystal. The component of the alloys indicates a regular and periodical gradient change which leads to the spontaneous delamination along the normal direction of substrate. In the TiAl/Nb laminated composites alternating overlaid by TiAl of 24 layers and Nb of 23 layers, the interface of each layer evenly distributed throughout the cross-section is transparent, and the interlayer spacing is about 8μm. The component of TiAl layers also changes regularly along the normal direction of substrate, but no delamination phenomenon is found. The TiAl/Nb laminated composites have better ductility than the TiAl-based alloys sheet.
