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Visualization of Vapor Film Collapse Behavior with Complexity on Quenching Process by Cellular Automaton
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作者 Tsuyoshi Sugimoto 《Journal of Mechanics Engineering and Automation》 2023年第1期7-15,共9页
The vapor film collapse that occurs in the quenching process is complicated and affects the heat treatment quality and its distortion.In order to incorporate it into the MBD(Model Based Development)technology required... The vapor film collapse that occurs in the quenching process is complicated and affects the heat treatment quality and its distortion.In order to incorporate it into the MBD(Model Based Development)technology required these days,it is necessary to predict the quality of heat treatment by CAE(Computer Added Engineering),shorten the product development period.The calculation of the vapor film collapses in a simple and practical time in order to improve the product performance.However,in the past,in order to formulate the vapor film collapse on a simulation,it was necessary to perform a very large amount of computational calculation CFD(computational fluid dynamics),which was a problem in terms of computer resources and the model of vapor film collapse.In addition,this phenomenon has a complexity behavior of the phenomenon in iterative processing,which also complicates the calculation.In this study,the vapor film collapse phenomenon is easily visualized using self-organized cellular automaton simulation which includes the phenomena of“vapor film thickness and its fluctuation”,“flow disturbance”,“surface step of workpiece”,and“decrease of cooling due to r shape of surface”.The average cooling state and repeated fluctuations of the cooling state were reproduced by this method. 展开更多
关键词 QUENCHING cellular automaton vapor film collapse complexity.
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Vapor film collapse triggered by external pressure pulse and the fragmentation of melt droplet in FCIs 被引量:2
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作者 LIN Qian TONG Lili +1 位作者 CAO Xuewu KRIVENTSEV Vladimir 《Nuclear Science and Techniques》 SCIE CAS CSCD 2008年第4期246-250,共5页
The fragmentation process of high-temperature molten drop is a key factor to determine the ratio heat transferred to power in FCIs,which estimates the possible damage degree during the hypothetical severe accident in ... The fragmentation process of high-temperature molten drop is a key factor to determine the ratio heat transferred to power in FCIs,which estimates the possible damage degree during the hypothetical severe accident in the nuclear reactors. In this paper,the fragmentation process of melt droplet in FCIs is investigated by theoretic analysis. The fragmentation mechanism is studied when an external pressure pulse applied to a melt droplet,which is surrounded by vapor film. The vapor film collapse which induces fragmentation of melt droplet is analyzed and modeled. And then the generated pressure is calculated. The vapor film collapse model is introduced to fragmentation correlation,and the predicted fragment size is calculated and compared with experimental data. The result shows that the developed model can predict the diameter of fragments and can be used to calculate the fragmentation process appreciatively. 展开更多
关键词 反应堆 压力脉冲 薄膜 核技术
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Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor
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作者 Yuki Kamochi Atsuhiro Motomiya +3 位作者 Hitoshi Habuka Yuuki Ishida Shin-Ichi Ikeda Shiro Hara 《Advances in Chemical Engineering and Science》 CAS 2023年第1期7-18,共12页
A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900&#8451;in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reacto... A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900&#8451;in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations. 展开更多
关键词 Chemical vapor Deposition Boron-Silicon film Boron Trichloride DICHLOROSILANE
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Two-dimensional numerical simulation of hydrodynamic behaviors of drop covered with vapor film 被引量:2
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作者 DUAN Riqiang, JIANG Shengyao, ZHANG Youjie, JIA Haijun & YANG Xingtuan Institute of Nuclear and New Energy Technology, Tsinghua University Advanced Reactor Engineering and Safety, Key Laboratory of MOE of China, Beijing 102201, China 《Science China(Technological Sciences)》 SCIE EI CAS 2005年第2期180-190,共11页
The breakup of drop covered with vapor film is numerically simulated. The moving particle semi-implicit method is used to solve the 2-dimensional unsteady Navier-Stokes equations for drop, vapor and ambient fluid. The... The breakup of drop covered with vapor film is numerically simulated. The moving particle semi-implicit method is used to solve the 2-dimensional unsteady Navier-Stokes equations for drop, vapor and ambient fluid. The results show that vapor film suppresses the drop breakup and hence the critical Weber number increases with the increasing thickness of vapor film. The breakup process can be divided into two stages. The drop deformation and breakup mainly occur in the later stage. Three breakup mechanisms are unveiled, which are almost the same as that of drop breakup without vapor film except for the stronger Rayleigh-Taylor instability for drop with vapor film. Our simulation results are comparable with the previous experiments. 展开更多
关键词 DROP breakup vapor film numerical simulation PARTICLE method moving PARTICLE SEMI-IMPLICIT method.
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Friction Behaviors of the Hot Filament Chemical Vapor Deposition Diamond Film under Ambient Air and Water Lubricating Conditions 被引量:2
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作者 SHEN Bin SUN Fanghong 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2009年第5期658-664,共7页
The friction behavior of the hot filament chemical vapor deposition(HFCVD) diamond film plays a critical role on its applications in mechanical fields and largely depends on the environment. Studies on the tribologi... The friction behavior of the hot filament chemical vapor deposition(HFCVD) diamond film plays a critical role on its applications in mechanical fields and largely depends on the environment. Studies on the tribological properties of HFCVD diamond films coated on Co-cemented tungsten carbide (WC-Co) substrates are rarely reported in available literatures, especially in the water lubricating conditions. In this paper, conventional microcrystalline diamond(MCD) and fine-grained diamond(FGD) films are deposited on WC-Co substrates and their friction properties are evaluated on a reciprocating ball-on-plate tribometer, where they are brought to slide against ball-bearing steel and copper balls in dry and water lubricating conditions. Scanning electron microscopy(SEM), atomic force microscopy(AFM), surface profilometer and Raman spectroscopy are adopted to characterize as-deposited diamond films; SEM and energy dispersive X-ray(EDX) are used to investigate the worn region on the surfaces of both counterface balls and diamond films. The research results show that the friction coefficient of HFCVD diamond films always starts with a high initial value, and then gradually transits to a relative stable state. For a given counterface and a sliding condition, the FGD film presents lower stable friction coefficients by 0.02-0.03 than MCD film. The transferred materials adhered on sliding interface are supposed to have predominate effect on the friction behaviors of HFCVD diamond films. Furthermore, the effect of water lubricating on reducing friction coefficient is significant. For a given counterpart, the stable friction coefficients of MCD or FGD films reduce by about 0.07-0.08 while sliding in the water lubricating condition, relative to in dry sliding condition. This study is beneficial for widespread applications of HFCVD diamond coated mechanical components and adopting water lubricating system, replacing ofoil lubricating, in a variety of mechanical processing fields to implement the green production process. 展开更多
关键词 Hot filament chemical vapor deposition(HFCVD) diamond films friction behavior water lubricating
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Growth of β-Ga_2O_3 Films on Sapphire by Hydride Vapor Phase Epitaxy 被引量:3
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作者 Ze-Ning XIONG Xiang-Qian XIU +7 位作者 Yue-Wen LI Xue-Mei HUA Zi-Li XIE Peng CHEN Bin LIU Ping HAN Rong ZHANG You-Dou ZHENG 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第5期141-143,共3页
Two-inch Ga_2O_3 films with(ˉ201)-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a hig... Two-inch Ga_2O_3 films with(ˉ201)-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V. 展开更多
关键词 Growth of Ga2O3 films on Sapphire by Hydride vapor Phase Epitaxy XRD
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Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen 被引量:3
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作者 马志斌 满卫东 +1 位作者 汪建华 王传新 《Plasma Science and Technology》 SCIE EI CAS CSCD 2003年第2期1735-1741,共7页
Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low s... Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeared in the XRD pattern confirms that the film is mainly composed of SP3 carbon. The diamond peak in the XRD pattern also broadens due to the nanocrystalline of the film. 展开更多
关键词 diamond film microwave plasma chemical vapor deposition ETHANOL
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Effect of Gas Sources on the Deposition of Nano-Crystalline Diamond Films Prepared by Microwave Plasma Enhanced Chemical Vapor Deposition 被引量:1
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作者 翁俊 熊礼威 +2 位作者 汪建华 满卫东 陈冠虎 《Plasma Science and Technology》 SCIE EI CAS CSCD 2010年第6期761-764,共4页
Nano-crystalline diamond (NCD) films were deposited on silicon substrates by a microwave plasma enhanced chemical vapor deposition (MPCVD) reactor in C2H5OH/H2 and CH4/H2/O2 systems, respectively, with a constant ... Nano-crystalline diamond (NCD) films were deposited on silicon substrates by a microwave plasma enhanced chemical vapor deposition (MPCVD) reactor in C2H5OH/H2 and CH4/H2/O2 systems, respectively, with a constant ratio of carbon/hydrogen/oxygen. By means of atomic force microscopy (AFM) and X-ray diffraction (XRD), it was shown that the NCD films deposited in the C2H5OH/H2 system possesses more uniform surface than that deposited in the CH4/H2/O2 system. Results from micro-Raman spectroscopy revealed that the quality of the NCD films was different even though the plasmas in the two systems contain exactly the same proportion of elements. In order to explain this phenomenon, the bond energy of forming OH groups, energy distraction in plasma and the deposition process of NCD films were studied. The experimental results and discussion indicate that for a same ratio of carbon/hydrogen/oxygen, the C2H5OH/H2 plasma was beneficial to deposit high quality NCD films with smaller average grain size and lower surface roughness. 展开更多
关键词 nano-crystalline diamond thin film chemical vapor deposition gas source ethanol
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Ultrathin atomic vapor film transmission spectroscopy: analysis of Dicke narrowing structure 被引量:3
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作者 李院院 张彦鹏 甘琛利 《Chinese Optics Letters》 SCIE EI CAS CSCD 2005年第11期672-675,共4页
Transmission sub-Doppler spectroscopy with confined atomic vapor film between two dielectric walls is theoretically studied. Because of atoms flying from wall to wall, where they get de-excited, the atomfield interact... Transmission sub-Doppler spectroscopy with confined atomic vapor film between two dielectric walls is theoretically studied. Because of atoms flying from wall to wall, where they get de-excited, the atomfield interaction time is anisotropic so that the contribution of slow atoms is enhanced, a sub-Doppler transmission spectroscopy (Dicke narrowing effect) can be obtained when the thickness of the film is much small or comparable with the wavelength even at small angle oblique incidence. It is feasible to get a sub-Doppler structure in a new region (L 〈 λ/4) in experiments. 展开更多
关键词 ATOMS Dielectric materials filmS Light refraction SPECTROSCOPY Transmissions vaporS
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The Effect of Pressure on the Dissociation of H_2/CH_4Gas Mixture during Diamond Films Growth via Chemical Vapor Deposition 被引量:1
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作者 赵庆勋 辛红丽 +2 位作者 韩佳宁 文钦若 杨景发 《Plasma Science and Technology》 SCIE EI CAS CSCD 2002年第1期1113-1118,共6页
Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used... Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation. The average energy distribution of electrons and the space distribution of effective species such as CH3, CH+3, CH+ and H at various gas pressures are given in this paper, and optimum experimental conditions are inferred from these results. 展开更多
关键词 The Effect of Pressure on the Dissociation of H2/CH4Gas Mixture during Diamond films Growth via Chemical vapor Deposition CH
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Fabrication and characterization of iron and iron carbide thin films by plasma enhanced pulsed chemical vapor deposition 被引量:1
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作者 Yulian HU Xu TIAN +4 位作者 Qipeng FAN Zhengduo WANG Bowen LIU Lizhen YANG Zhongwei LIU 《Plasma Science and Technology》 SCIE EI CAS CSCD 2019年第10期54-60,共7页
A new pulsed chemical vapor deposition(PCVD) process has been developed to fabricate iron(Fe) and iron carbide(Fe1-xCx) thin films at low temperature range from 150 ℃ to 230 ℃.The process employs bis(1,4-di-ter... A new pulsed chemical vapor deposition(PCVD) process has been developed to fabricate iron(Fe) and iron carbide(Fe1-xCx) thin films at low temperature range from 150 ℃ to 230 ℃.The process employs bis(1,4-di-tert-butyl-1,3-diazabutadienyl)iron(Ⅱ) as iron source and hydrogen gas or hydrogen plasma as the coreactant.The films deposited with hydrogen gas are demonstrated polycrystalline with body-centered cubic Fe.However,for the films deposited with hydrogen plasma,the amorphous phase of iron carbide is obtained.The influence of the deposition temperature on iron and iron carbide characteristics have been investigated. 展开更多
关键词 Fe and Fe1-xCx filmS H2 plasma PULSED chemical vapor DEPOSITION
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High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition
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作者 王连锴 刘仁俊 +4 位作者 吕游 杨皓宇 李国兴 张源涛 张宝林 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第1期114-118,共5页
Orthogonal experiments of Ga Sb films growth on Ga As(001) substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition(LP-MOCVD) system. The crystallinities and mic... Orthogonal experiments of Ga Sb films growth on Ga As(001) substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition(LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized Ga Sb thin film has a narrow full width at half maximum(358 arc sec) of the(004) ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of Ga Sb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline Ga Sb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices. 展开更多
关键词 crystal growth metal–organic chemical vapor deposition thin films
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Comparison of ZnO Films Grown on before- and after-vapor Transport Equilibration (VTE) LiAlO_2 Substrates by Pulsed Laser Deposition (PLD)
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作者 Jun ZOU Shengming ZHOU Jun XU 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2006年第3期333-335,共3页
About φ45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) process... About φ45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film. 展开更多
关键词 Crystal structure Pulsed laser deposition ZnO films vapor transport equilibration (VTE)
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Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition 被引量:1
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作者 闫许 冯飞 +1 位作者 张进 王跃林 《Plasma Science and Technology》 SCIE EI CAS CSCD 2009年第5期569-575,共7页
Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. The root-mean-square (RMS) roughness... Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. The root-mean-square (RMS) roughness of the film was measured by atomic force microscope (AFM) and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si:H film with smooth surface morphology can be obtained by increasing the PH3/N2 gas flow rate for 10% in a high frequency (HF) mode. For high power, however, the surface morphology of the film will deteriorate when the Sill4 gas flow rate increases. Furthermore, optimized parameters of PECVD for growing the film with smooth surface were obtained to be Sill4:25 sccm (standard cubic centimeters per minute), At: 275 sccm, 10%PH3/N2:2 sccm, HF power: 15 W, pressure: 0.9 Torr and temperature: 350℃. In addition, for in thick fihn deposition on silicon substrate, a N20 and NH3 preprocessing method is proposed to suppress the formation of gas bubbles. 展开更多
关键词 hydrogenated amorphous silicon film surface roughness plasma enhancedchemical vapor deposition
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Nanocrystalline Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition and Its Biocompatible Property 被引量:1
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作者 Jihan Yang Yongping Zhang 《Advances in Materials Physics and Chemistry》 2018年第4期157-176,共20页
Due to its unique properties such as high hardness, light transmittance, thermal conductance, chemical stability and corrosion resistance, diamond has drawn tremendous attention in last two decades. These specific pro... Due to its unique properties such as high hardness, light transmittance, thermal conductance, chemical stability and corrosion resistance, diamond has drawn tremendous attention in last two decades. These specific properties made diamond film a promising material for cutting tools, microwave windows, heat sinks for electronic devices and diamond electrodes. However, the diamond film with grain sizes at microscale usually exhibits high surface roughness and hinders its applications in the microelectro mechanical system (MEMS) and biological field because it is difficult to be polished by mechanical and chemical methods. With the development of the chemical vapor deposition, the nanocrystalline diamond (NCD) film has been fabricated and found new applications. The grain size of NCD film is in the range of 10 to 100 nm, which inherits the properties of the diamond and possesses the unique properties of the nanoscale materials, and the morphology of the NCD film is granular or needle-like structure. The microwave plasma chemical vapor deposition (MPCVD) has been regarded as the most promising method to deposit NCD film at low temperature. Compared to the hot filament CVD, MPCVD can grow high quality NCD film avoiding of the contamination from the filament materials. The MPCVD technique has high plasma density to activate carbonaceous compound and grow NCD film in high growth rate and low substrate temperature. The unique properties of NCD film, such as the superior electrical, mechanical and biological properties facilitate their application in various fields. The biological application, especially as a biocompatible coating, mainly includes the joint replacement implants and protective coatings and the ophthalmological prosthesis. 展开更多
关键词 NANOCRYSTALLINE DIAMOND films MICROWAVE Plasma Chemical vapor DEPOSITION BIOCOMPATIBLE PROPERTY
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SYNTHESIS OF PPCuPc FILM BY MICROWAVE PLASMA CHEMICAL VAPORIZATION DEPOSITION(MPCVD)
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作者 Ai Min YU Wen Guo XU +1 位作者 Wen Jun YANG Qin Han JIN 《Chinese Chemical Letters》 SCIE CAS CSCD 1991年第11期897-900,共4页
Using a low power microwave generator(W_(max)=100W) and a Surfatron discharge device, Plasma-polymerized copper phthalocyanine (PPCuPc) film was synthesised from monomer copper phthalocyanine(CuPc) by microwave plasma... Using a low power microwave generator(W_(max)=100W) and a Surfatron discharge device, Plasma-polymerized copper phthalocyanine (PPCuPc) film was synthesised from monomer copper phthalocyanine(CuPc) by microwave plasma chemical vaporization deposition(MPCVD) with Ar as incorporation gas. The film was characterized by FTIR and ESCA. The role of dissociation of chemical bond in the polymerization process and the influence of substrate temperature and material on deposition were investigated in some detail. 展开更多
关键词 FTIR MPCVD SYNTHESIS OF PPCuPc film BY MICROWAVE PLASMA CHEMICAL vaporIZATION DEPOSITION ESCA
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Structural and optical properties of tellurium films obtained by chemical vapor deposition(CVD)
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作者 马玉天 龚竹青 +1 位作者 徐卫红 黄坚 《中国有色金属学会会刊:英文版》 EI CSCD 2006年第3期693-699,共7页
Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron mi... Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron microscopy, FTIR transmission, UV/VIS/NIR transmission and reflectance. The results show that the films structural and optical properties are influenced by many factors such as film thickness, crystallite size and substrate temperature. The films as thick as 111?133 nm have high IR transmission across the full 8?13 μm band and highly blocking in the solar spectral region elsewhere, which indicates that Te films thickness in this region can be used as good solar radiation shields in radiative cooling devices. 展开更多
关键词 碲薄膜 化学气相淀积 太阳辐射防护 CVD 辐射冷却 光学性能
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<100> Textured Diamond Film on Silicon Grown by Hot Filament Chemical Vapor Deposition
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作者 Xuanxiong ZHANG Tiansheng SHI and Xikang ZHANG (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy,Chinese Academy of Sciences, Shanghai, 200050, China) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1995年第6期426-428,共3页
The <100> textured growth of diamond film on HF eroded silicon wafer has been studied by HFCVD. The evolution of grain size and sudece morphology vs deposition time is presented and the <100> textured thic... The <100> textured growth of diamond film on HF eroded silicon wafer has been studied by HFCVD. The evolution of grain size and sudece morphology vs deposition time is presented and the <100> textured thick diamond film (80μm) with smooth surface, desirable for practical application in many fields is obtained 展开更多
关键词 Textured Diamond film on Silicon Grown by Hot Filament Chemical vapor Deposition OO
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Fabrication of tungsten films by metallorganic chemical vapor deposition
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作者 Yi Li Jin-pu Li +1 位作者 Cheng-chang Jia Xue-quan Liu 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2012年第12期1149-1153,共5页
Tungsten films growing on copper substrates were fabricated by metallorganic chemical vapor deposition (MOCVD). The chemi-cal purity, crystallographic phase, cross-sectional texture, and resistivity of the deposited... Tungsten films growing on copper substrates were fabricated by metallorganic chemical vapor deposition (MOCVD). The chemi-cal purity, crystallographic phase, cross-sectional texture, and resistivity of the deposited films both before and after annealing treatment were investigated by X-ray energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and four-point probe method. It is found that the films deposited at 460°C are metastable β-W with (211) orientation and can change into α-W when an-nealed in high-purity hydrogen atmosphere at high temperature. There are small amounts of C and O in the films, and the W content of the films increases with increasing deposition temperature and also goes up after annealing in high-purity hydrogen atmosphere. The films have columnar microstructures and the texture evolution during their growth on copper substrates can be divided into three stages. The resistivity of the as-deposited films is in the range of 87-104 μΩ·cm, and low resistivity is obtained after annealing in high-purity hydrogen atmosphere. 展开更多
关键词 thin films TUNGSTEN metallorganic chemical vapor deposition CRYSTALLOGRAPHY textures electric properties
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Influence of Iodine Pressure on the Growth of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”
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作者 Dayane Habib Roy Al Asmar +1 位作者 Ziad El Helou Georges El Haj Moussa 《World Journal of Condensed Matter Physics》 2013年第4期164-168,共5页
We present the results concerning photovoltaic materials CuIn1-xGaxSe2 thin films, which were obtained by close-spaced vapor transport “CSVT”. The influence of the iodine pressure on the growth of CuIn1-xGaxSe2 thin... We present the results concerning photovoltaic materials CuIn1-xGaxSe2 thin films, which were obtained by close-spaced vapor transport “CSVT”. The influence of the iodine pressure on the growth of CuIn1-xGaxSe2 thin films was studied. The thin films were characterized by Energy Dispersive Spectrometry (EDS), Scanning Electron Microscope (SEM), hot point probe method, X-Ray Diffraction (XRD), Photoluminescence, and Optical response (Photoconductivity). At high pressure, the deposition rate was very important. The films were relatively thick and homogeneous with large grains dimensions. These films are formed of crystals placed in a preferential orientation depending on the plan (112). At low pressure, the films were thin and inhomogeneous with relatively small grains. These films of crystals didn’t have preferential orientation. 展开更多
关键词 Chemical vapor Deposition CuIn1-xGaxSe2 Thin films CHALCOPYRITE Photovoltaic
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