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Remarkable carbon dioxide catalytic capture (CDCC) leading to solid-form carbon material via a new CVD integrated process (CVD-IP): An alternative route for CO_2 sequestration 被引量:5
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作者 Wei Chu Maofei Ran +4 位作者 Xu Zhang Ning Wang Yufei Wang Heping Xie Xiusong Zhao 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2013年第1期136-144,共9页
Through our newly-developed "chemical vapor deposition integrated process (ISVD-IP)'" using carbon OlOXlae (t..u2) as me raw matenal and only carbon source introduced, CO2 could be catalytically activated and c... Through our newly-developed "chemical vapor deposition integrated process (ISVD-IP)'" using carbon OlOXlae (t..u2) as me raw matenal and only carbon source introduced, CO2 could be catalytically activated and converted to a new solid-form product, i.e., carbon nanotubes (CO2-derived) at a quite high yield (the single-pass carbon yield in the solid-form carbon-product produced from CO2 catalytic capture and conversion was more than 30% at a single-pass carbon-base). For comparison, when only pure carbon dioxide was introduced using the conventional CVD method without integrated process, no solid-form carbon-material product could be formed. In the addition of saturated steam at room temperature in the feed for CVD, there were much more end-opening carbon nano-tubes produced, at a slightly higher carbon yield. These inspiring works opened a remarkable and alternative new approach for carbon dioxide catalytic capture to solid-form product, comparing with that of CO2 sequestration (CCS) or CO2 mineralization (solidification), etc. As a result, there was much less body volume and almost no greenhouse effect for this solid-form carbon-material than those of primitive carbon dioxide. 展开更多
关键词 carbon dioxide catalytic capture (CDCC) carbon nanotubes (CNTs) chemical vapor deposition integrated process (CVD-IP) solid-formcarbon material debating greenhouse gases (GHG) effects
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An Experimental Study of Surface Improvement in FDM Parts by Vapor Treatment Process
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作者 Mayank Prajapati Sandeep Rimza 《Journal of Mechanical Engineering Research》 2020年第1期12-20,共9页
Fused deposition modeling is one of the most adaptable additive production method as a result of the value-effectiveness and environment-friendly nature.However,FDM technique nevertheless possesses primary problems in... Fused deposition modeling is one of the most adaptable additive production method as a result of the value-effectiveness and environment-friendly nature.However,FDM technique nevertheless possesses primary problems in phrases of negative surface best due to including layer by using layer production method for the prototypes.It is acceptable to explore an efficient method for FDM elements to enhance the bad surface first-rate and dimensions precision.In the present research paper,an effort has been made to decorate the surface better and optimize the vital processing parameter of FDM based benchmark the use of vapor smoothing procedure(VSP).A comparative experimental take a look at has been completed by layout of experiments,Taguchi technique to analyse impact of input layout parameters at the floor finish of benchmark FDM parts.The outcomes of prevailing research display that VSP treatment improves the surface excellent of FDM components to micro stage with negligible dimensional variation.It is observed that improved floor excellent is observed in the 1,2,-Dichloroethane chemical at 90°component construct orientation,0.25 mm layer thickness,10%fill density and 90 sec Exposure times. 展开更多
关键词 FDM Vapor chemical process Surface quality Design of experiment
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Structural, Optical and Electrical Properties of Li-doped ZnO Thin Films Influenced by Annealing Temperature 被引量:1
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作者 王冰 TANG Lidan +1 位作者 PENG Shujing WANG Jianzhong 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2014年第5期873-876,共4页
Li-doped ZnO thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of ZnO films were examined by XRD, FESEM, Hall measurement and... Li-doped ZnO thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of ZnO films were examined by XRD, FESEM, Hall measurement and optical transmission spectra. Results showed that p type conduction was observed in Li doped ZnO films annealed at 500-600 ℃ and thep type ZnO films possessed a good crystalline with c-axis orientation, dense surface, and average transmission of about 85% in visible spectral region. 展开更多
关键词 doping defects physical vapor deposition processes OXIDES semiconducting Ⅱ-Ⅵmaterials heterojunction semiconductor devices
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Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations
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作者 Xianchun Peng Jie Sun +8 位作者 Huan Liu Liang Li Qikun Wang Liang Wu Wei Guo Fanping Meng Li Chen Feng Huang Jichun Ye 《Journal of Semiconductors》 EI CAS CSCD 2022年第2期59-65,共7页
AlN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing(HTTA)on the structural,optical properties as well as sur... AlN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing(HTTA)on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the(0002)diffraction peak to as low as 68 arcsec of AlN after HTTA implies a reduction of tilt component inside the AlN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high)Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AlN regardless of sapphire orienta-tion. 展开更多
关键词 nitrides physical vapor deposition processes semiconducting III-V materials DEFECTS
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ADVANCED SYNTHESIS OF LIGHT METALS
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作者 F.H. Froes(IMAP, University of Idaho, Moscow, ID 838443026, USA ) 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1996年第6期531-536,共6页
The synthesis, processing and mechanical properties of the light metals, aluminum,magnesium and titanium Produced by advanced techniques are reviewed. Synthesis techniques to be addressed will include rapid solidifica... The synthesis, processing and mechanical properties of the light metals, aluminum,magnesium and titanium Produced by advanced techniques are reviewed. Synthesis techniques to be addressed will include rapid solidification, spray deposition, mechanical alloying, plasma Processing and vapor deposition. 展开更多
关键词 synthesis/processing powder metallurgy lightweight metals aluminum magnesium titanium rapid solidification spray depositin mechanical alloying Plasma processing vapor deposition
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Controlling the electronic structure of SnO_2 nanowires by Mo-doping
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作者 罗志华 唐东升 +6 位作者 海阔 余芳 陈亚奇 何熊武 彭跃华 袁华军 羊亿 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第2期352-356,共5页
Mo-doped SnO2 (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo dopin... Mo-doped SnO2 (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580~nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%. 展开更多
关键词 doping nanostructures chemical vapor deposition processes semiconducting materials
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