Preparation of calibration standard of organic vapours using the diffusion tube method

This paper describe the theoretical consideration, experimental results and applications of diffusion tube, used for preparing the calibration standard of organic vapours. This dynamic procedure entirely eliminates the adsorption effect, which is important in static procedures. Its concentration range is wider than that of the permeation tube. The diffusion tube technique is therefore a very accurate, simple and easy-to-make device. It is quite useful in the determination of organic pollutants existing in the environment.

Altered Host Resistance to Listeria monocytogenes In Mice Exposed to 1-Chloroacetophenone (CN) Vapours

Short term repeated exposure of 1-chloroacetophenone (CN) vapours at a concentration of 0.153 mg per litre for 15 minutes daily on 10 consecuitve days in Swiss albino male mice resulted in increased mortality to Listeria monocytogenes. Significantly elevated bacterial growth was observed in the spleen and liver of the CN exposed animals. The increased bacterial count in these organs was evident within 4-6 days post challenge as compared to vehicle exposed infected and unexposed infected animals. Increased susceptibility to infection has been considered to be the function of immune alteration due to cumulative short term effects ofCN vapour inhalation. This may be attributed to immunotoxic effects of CN on Tcells mediated macrophage functions.

Influence of Silver Vapours on the Transport of Nitrogen Plasma Properties

Theoretical investigation of nitrogen-silver arc transport properties and an arc plasma model in stationary state have studied at low temperature i.e. between 3500 K and 13,000 K at atmospheric pressure. Results showed that the presence of small amounts of metal vapours, which have low ionization potential such as silver, modify the plasma characteristics. The solution of Elenbaas-Heller gives us some information about the effect of metal vapours emitted from electrode on the characteristics of the arc column. We concluded that a small fraction of metal vapours in the arc column modify the electric field, current and the axial temperature.

Correlative spatter and vapour depression dynamics during laser powder bed fusion of an Al-Fe-Zr alloy

Spatter during laser powder bed fusion(LPBF)can induce surface defects,impacting the fatigue performance of the fabricated components.Here,we reveal and explain the links between vapour depression shape and spatter dynamics during LPBF of an Al-Fe-Zr aluminium alloy using high-speed synchrotron x-ray imaging.We quantify the number,trajectory angle,velocity,and kinetic energy of the spatter as a function of vapour depression zone/keyhole morphology under industry-relevant processing conditions.The depression zone/keyhole morphology was found to influence the spatter ejection angle in keyhole versus conduction melting modes:(i)the vapour-pressure driven plume in conduction mode with a quasi-semi-circular depression zone leads to backward spatter whereas;and(ii)the keyhole rear wall redirects the gas/vapour flow to cause vertical spatter ejection and rear rim droplet spatter.Increasing the opening of the keyhole or vapour depression zone can reduce entrainment of solid spatter.We discover a spatter-induced cavity mechanism in which small spatter particles are accelerated towards the powder bed after laser-spatter interaction,inducing powder denudation and cavities on the printed surface.By quantifying these laser-spatter interactions,we suggest a printing strategy for minimising defects and improving the surface quality of LPBF parts.

Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy

The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics applications,including the development of efficient and low-cost mid-infrared detectors and light sources.However,achieving precise control over the Sn concentration and strain relaxation of the Ge_(1–y)Sn_(y)epilayer,which directly influence its optical and electrical properties,remain a significant challenge.In this research,the effect of strain relaxation on the growth rate of Ge_(1–y)Sn_(y)epilayers,with Sn concentration>11at.%,is investigated.It is successfully demonstrated that the growth rate slows down by~55%due to strain relaxation after passing its critical thickness,which suggests a reduction in the incorporation of Ge into Ge_(1–y)Sn_(y)growing layers.Despite the increase in Sn concentration as a result of the decrease in the growth rate,it has been found that the Sn incorporation rate into Ge_(1–y)Sn_(y)growing layers has also decreased due to strain relaxation.Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge_(1–y)Sn_(y)epilayers with tuned Sn concentration and strain relaxation.

Evidence of Hydropassive Movement in Stomatal Oscillations of Glycyrrhiza inflata under Desert Conditions

Stomatal conductance was found to change from steady-state to a slate of oscillations during daytime when vapour pressure deficit (VPD) increased to a value of 1 kPa in Glycyrrhiza inflata Batalin grown under the conditions of arid desert in north-west China. The injected metabolic inhibitors (NaN3 or carbonyl cyanide-m-chlorophenyl-hydrazone (CCCP)) slightly reduced the stomatal conductance but did not significantly decrease the intensity of stomatal oscillations (amplitude/average). The oscillation intensity was found to he significantly correlated with VPD and root resistance, but not with the respiration rate. There might exist a minimum threshold of VPD (0.8 kPa) and root resistance (1/4 relative value) that induced stomatal oscillations. These results suggested that stomatal oscillations induced by atmospheric drought stress and root resistance were mainly a type of hydropassive movement.

Analysis on Vapour Field for the Drought Causes in Beijing,Tianjin and Hebei Districts in Recent Years

The monthly variation,temporal-spatial distribution,transportation characteristics of vapour field at middle and lower atmosphere and their effects on drought in Beijing,Tianjin and Hebei districts were studied,which have a guiding significance on predicting climate and arranging agricultural production in the district.

Analysis of An Infrequent Regional Heavy Rainfall Weather Process in Heilongjiang Province in June of 2009

From June 18th to June 19th of 2009,Heilongjiang Province was hit by the regional rainstorm rarely paralleled in history.According to the findings based upon the conventional observation data,the precipitation occurred under the double-blocking situation of Ural Mountains and the Sea of Okhotsk.The main influencing systems were the upper vortex and northward low-pressure that came from Hetao area,accompanied by the delivery of high and low level jet stream.The results showed that the evolvement of blocking high,transfer of water vapor and configuration of high and low level jet stream were the key factors resulting in the rainfall process.

AFM Observation of GaN Grown on Different Substrates at Low Temperatures

Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods\ Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement, cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the film properties. Results\ It was found that the temperature and the nature of substrate materials influence the layer morphology. Conclusion\ The analysis shows that no apparent relationship exists between the optical properties and layer morphology.

GaN纳米线的制备

Wurtzite structure gallium nitride, GaN,a direct bandgap semiconductor(3.4 eV at room temperature),is an ideal material for fabrication of blue/green light emit ting diodes(LED),laser diodes(LD),and high power integrated circuits.When used a s the material for LEDs and LDs,GaN has high transforming efficiencies and its d evice s have a long using lifetime of up to 10000 hours,several decuple times longer t han that of conventional light emitting diodes.As a semiconductor material for b lue/green light sources,GaN is non replaceable.It will have important applications in li g ht emitting devices,optical communication systems,compact disk(CD)players,full c olor copying devices,full color printers,high distinguishing laser printers,gr ea t screen full color displaying devices,and super thin TV displaying devices etc . In recent years,GaN has been the focus and hotspot of semiconductor industries,a nd its devices have a shining place in light emitting and laser industries. We synthesized GaN nanowires by a chemical vapor deposition (CVD)method.The nano wires have diameters from 20 nm to 60 nm,and the maximum length is up to 100 μ m .Following figure is the scanning electron microscopy (SEM)image of the as synt hesized GaN nanowires.

APPLICATION POSSIBILITY OF BINARY NONAZEOTROPIC REFRIGERANT IN JET REFRIGERATION *

This paper analyzes the possibility of applying binary nonazeotropic refrigerants in the jet refrigeration cycle. The thermodynamic cycle performance of two kinds of working pairs (R30/R142b, R30/R124) are calculated using the EOS of PR equation of state, and the results are discussed. The theoretical calculations indicate that refrigerating quality can be improved if the binary mixtures evaporate just in the low temperature region. The character of the rejecter to compress two phase medium supports the possibility of this kind of cycle.

Calculation of Vapour Pressure of Metals by Statistical-Mechanical Method With the Debye Model

Statistical expression of vapour pressure equations of metals is derived from the Debye model.The statistical distribution of T_(-p) ensemble is presented in an in-elab- orate mode and the partition function is defined.The vapour pressure of eleven metals have been calculated with the Debye equation and compared with those given by the E- instein equation and empirical equation.Comparison of results of calculation from dif- ferent methods show their evident accordance within the same orders of magnitude.

GaN晶体的生长及其低维材料的制备

Wurtzite strcture gallium nitride, GaN,a direct bandgap semiconductor (3.4 eV at room temperature),is an ideal material for fabrication of blue/green light emit ti ng diodes, laser diodes,and high power integrated circuits.Recent progress in th in film crystal technique has realized the output of blue semiconductor lasers w i th a lifetime of over 10000 hours under continuous wave operation at room tempe r ature.So far GaN and its ternary indium and aluminum alloys are grown almost uni v ersally on foreign substrates with varying lattice mismatches.The mismatch undou btedly results in a significant dislocation density in the grown films.Hence it is necessary to grow single crystal GaN to be used as substrates for improvement of laser diodes.On the other hand,low dimensional GaN materials such as nanocry stalline powder,nanocrystal assembled bulk(nanophase) and nano wires are very u seful in both fundamental mesoscopic research and future development of GaN nano devices.Here we report our main recent progresses on the crystal growth of GaN a nd the preparation of its low dimensional materials.

硅基底的CVD扩磷工艺研究

文章利用化学气相沉积(CVD)扩磷的方法,在单晶硅基底上进行扩磷工艺研究。采用X射线光电子能谱分析扩磷硅基底,通过原子力显微镜观察扩磷时间和温度对硅基底表面形貌的影响,并利用半导体特性测试仪研究扩磷时间和温度对硅基底I-V特性的影响。结果表明,扩磷温度和时间对硅基底的表面粗糙度和晶粒的平均尺寸影响较大,扩磷时间越长、温度越高,硅基底的电学特性越明显。

Correlation of Vapour Liquid Equilibria of Binary Mixtures Using Artificial Neural Networks

In this paper, a back propagation artificial neural network （BP-ANN） model is presented for the simultaneous estimation of vapour liquid equilibria （VLE） of four binary systems viz chlorodifluoromethan-carbondioxide, trifluoromethan-carbondioxide, carbondisulfied-trifluoromethan and carbondisulfied-chlorodifluoromethan. VLE data of the systems were taken from the literature for wide ranges of temperature （222.04-343.23K） and pressure （0.105 to 7.46MPa）. BP-ANN trained by the Levenberg-Marquardt algorithm in the MATLAB neural network toolbox was used for building and optimizing the model. It is shown that the established model could estimate the VLE with satisfactory precision and accuracy for the four systems with the root mean square error in the range of 0.054-0.119. Predictions using BP-ANN were compared with the conventional Redlich-Kwang-Soave （RKS） equation of state, suggesting that BP-ANN has better ability in estimation as compared with the RKS equation （the root mean square error in the range of 0.115-0.1546）.

Selective reflection combined with Fabry-Perot effects from two-level atoms confined between two dielectric walls

The coefficient of selective reflection at oblique incidence from two-level atoms confined between two dielectric walls is calculated in this paper. It is found to be related to the transient behaviour of atoms after colliding with the wall and the distribution of the field inside the vapour corresponds to L/λ, with L the thickness of the film and λ the incident wavelength. We find that the sub-Doppler structure is manifest both for normal incidence and small angle oblique incidence, It is feasible to detect the real part of selective reflection in several cases that have not been achieved before.

Thermodynamic Study on Rare Earth Vapour Complex:EuAl_3Cl_（12）

Thermodynamic study was carried out on the reaction EuCl_(3(s))+(v/2)Al_2Cl_(6(g))= EuAl_vCl_((3v)+3(g))byquenching experiments within 6 3 8 ～ 7 6 2 K and 0 . 0 3 ～ 0 . 1 4 MPa . The results suggested that theEuAl_3Cl_(12(g)) complex was the predormnant species. The equilibrium constants of the reaction were measured. The reaction enthalpy and entropy derived from the measurements were and

Island-growth of SiCGe films on SiC

SiCGe ternary alloys have been grown on SiC by hot-wall low-pressure chemical vapour deposition. It has been found that the samples cxhibit an island configuration, and the island growth of SiCGe epilayer depends on the processing parameters such as the growth temperature. When the growth temperature is comparatively low, the epilayer has two types of islands： onc is spherical island; another is cascading triangular island. With the increase of the growth temperature, the islands change from spherical to cascading triangular mode. The size and density of the islands depend on the growth duration and GeH4 flow-rate. A longer growth time and a larger GeH4 flow-rate can increase the size and density of the island in thc initial stage of the epitaxy. In our case, The optimal growth for a high density of uniform islands occurred at a growth temperature of 1100℃ for l-minute growth, with 10 SCCM GeH4, resulting in a narrow size distribution （about 30nm diameter） and high density （about 3.5 ×10^10 dots/cm2）. The growth follows Stranski- Krastanov modc （2D to 3D modc）, both of the islands and the 2D growth layer have face-centred cubic structure, and the critical thickness of the 2D growth layer is only 2.5 nm.

Controlled growth and field emission of vertically aligned A1N nanostructures with different morphologies

The controllable growth of three different morphologies of AlN nanostructures （nanorod, nanotip and nanocrater） arrays are successfully realized by using chemical vapour deposition （CVD） technology. All three nanostructures are of single crystal h-AlN with a growth orientation of [001]. Their growth is attributed to the vapour-liquid-solid （VLS） mechanism. To investigate the factors affecting field emission （FE） properties of AlN nanostructures, we compare their FE behaviours in several aspects. Experimental results show that AIN nanocrater arrays possess the best FE properties, such as a threshold field of 7.2 V/μm and an emission current fluctuation lower than 4%. Moreover, the three AlN nanostructures all have good field emission properties compared with a number of other excellent cathode nanomaterials, which suggests that they are future promising FE nanomaterials.

TDZ-Induced High Frequency Plant Regeneration through Direct Shoot Organogenesis in <i>Stevia rebaudiana</i>Bertoni: An Important Medicinal Plant and a Natural Sweetener

An efficient high frequency plant regeneration protocol through direct organogenesis was developed for Sevia rebaudiana Bert. Nodal segments containing axillary buds were used as an explant and inoculated on Murashige and Skoog’s (MS) medium containing 3% (w/v) sucrose, 0.8% (w/v) agar supplemented with various concentrations of benzyladenine (BA), kinetin (Kn) and thidiazuron (TDZ) ranging from 1.00 to 9.00 μM. Maximum multiple shoots (96%) were obtained in MS medium supplemented with 1.0 μM TDZ with an average of 60 shoots per culture, having an average shoot length of 6.0 cm. The best in vitro root induction (89%) was achieved on half strength MS medium without any growth regulator with an average of 24 roots per culture and root length of7 cm. The rooted plantlets were successfully established in soil and grown to maturity at the survival rate of 95% in the indoor grow room. High-performance liquid chromatography was used to assess the stability in chemical profile and quantification of stevioside and rebaudioside A content of in vitro propagated S. rebaudiana plants and compared with their mother plant at the peak vegetative stage. Our results show no significant differences (p in vitro propagated plants. Furthermore, fully developed in vitro propagated S. rebaudiana plants were also compared with mother plant for their gas and water vapour exchange characteristics and leaf anatomy. The results show that in vitro propagated and hardened plants of S. rebaudiana are morphologically as well as functionally comparable to each other and to their mother plant.