A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications

The left-handed nonlinear transmission line （LH-NLTL） based on monolithic microwave integrated circuit （MMIC） technology possesses significant advantages such as wide frequency band, high operating frequency, high conversion efficiency, and applications in millimeter and submillimeter wave frequency multiplier. The planar Schottky varactor diode （PSVD） is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component. The design and the fabrication of the diode for such an application are presented. An accurate large-signal model of the diode is proposed. A 16 GHz-39,6 GHz LH NLTL frequency doubler using our large-signal model is reported for the first time. The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz, and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm. The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.

Planar Schottky varactor diode and corresponding large signal model for millimeterwave applications

A GaAs-based planar Schottky varactor diode （PSVD） is successfully developed to meet the demand of millimeter-wave harmonic generation. Based on the measured S-parameter, I-V and C-V characteristics, an accurate and reliable extraction method of the millimeter-wave large signal equivalent circuit model of the PSVD is proposed and used to extract the model parameters of two PSVDs with Schottky contact areas of 160 μm2 and 49 μm2, respectively. The simulated S-parameter, I-V and C-V performances of the proposed physics-based model are in good agreement with the measured one over the frequency range from 0.1 to 40 GHz for wide operation bias range from -10 to 0.6 V for these two PSVDs. The proposed equivalent large signal circuit model of this PSVD has been proven to be reliable and can potentially be used to design microwave circuits.

Varactor-tunable frequency selective surface with an embedded bias network

A new technique for designing a varactor-tunable frequency selective surface （FSS） with an embedded bias network is proposed and experimentally verified. The proposed FSS is based on a square-ring slot FSS. The frequency tuning is achieved by inserting varactor diodes between the square mesh and each unattached square patch. The square mesh is divided into two parts for biasing the varactor diodes. Full-wave numerical simulations show that a wide tuning range can be achieved by changing the capacitances of these loaded varactors. Two homo-type samples using fixed lumped capacitors are fabricated and measured using a standard waveguide measurement setup. Excellent agreement between the measured and simulated results is demonstrated.

A k-band broadband monolithic distributed frequency multiplier based on nonlinear transmission line

A fabrication technology of GaAs planar Schottky varactor diode （PSVD） is successfully developed and used to design and manufacture CaAs-based monolithic frequency multiplication based on 23-section nonlinear transmission lines （NLTLs） consisting of a coplanar waveguide transmission line and periodically distributed PSVDs. The throughout design and optimization procedure of 23-section monolithic NLTLs for frequency multiplication in the k-band range is based on a large signal equivalent model of PSVD extracted from small-signal S-parameter measurements. This paper reports that the distributed SPVD exhibits a capacitance ratio of 5.4, a normalized capacitance of 0.86 fF/μm2 and a breakdown voltage in excess of 22 V. The integrated 23-section NLTLs fed by 20-dBm input power demonstrates a 26-GHz peak second harmonic output power of 14-dBm with 25.3% conversion efficiency in the second harmonic output frequency range of 6 GHz-26 GHz.