Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the ＇hard gap＇ energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.

Ferromagnetism,variable range hopping,and the anomalous Hall effect in epitaxial Co:ZnO thin film

A series of high quality single crystalline epitaxial Zn 0.95 Co 0.05 O thin films is prepared by molecular beam epitaxy.Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10 18 cm 3-10 20 cm 3 by changing the oxygen partial pressure during film growth.The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature.The ferromagnetism can be maintained up to room temperature.However,the anomalous Hall effect is observed only at low temperature and disappears above 160 K.This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.

Variable Range Hopping in Hydrogenated Amorphous Silicon-Nickel Alloys

On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys.

多策略改进的蜣螂搜索算法优化3DDV-Hop节点定位

为了提升传统3DDV-Hop算法的定位精度和稳定性,提出了MIDBO-3DDV-Hop算法。该算法利用多策略改进蜣螂搜索算法(multi strategy improvement dung beetle optimizer, MIDBO)来提高3DDV-Hop算法的定位精度。该算法通过通信半径分级方法细化跳数,使用加权平均跳距来修正节点之间的跳距误差。MIDBO算法引入立方混沌初始化和反向折射机制来初始化算法种群,采用变螺旋策略增强全局搜索能力。算法还融入Levy飞行策略和自适应权重因子,以避免陷入局部最优,并平衡算法的收敛性和搜索多样性。通过MIDBO算法对3DDV-Hop算法中未知节点位置进行优化。仿真结果显示,与传统的3DDV-Hop、IPSO-3DDV-Hop和IGA-3DDV-Hop算法相比,MIDBO-3DDV-Hop算法在定位精度、稳定性和收敛速度方面均达到最优水平。

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics.There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data,which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in Vg1 and valley in Vg2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages Vg1 and Vg2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures

In this paper, we discuss low-temperature hopping-conductivity behavior in the insulating phase, in the absence of a magnetic field. We conduct a theoretical study of the crossover from hopping to activated transport in a GaAs two-dimensional hole system at low temperatures, finding that a crossover takes place from the Efros-Shklovskii variable-range hopping(VRH)regime to an activated regime in this system. This conductivity behavior in p-GaAs quantum wells is qualitatively consistent with the laws laid down in theories of localized electron interactions. Given sufficiently strong interactions, the holes in the localized states are able to hop collectively.

Localization effect in single crystal of RuAs_(2)

We report the magnetotransport and thermal properties of RuAs_(2) single crystal.RuAs_(2) exhibits semiconductor behavior and localization effect.The crossover from normal state to diffusive transport in the weak localization(WL)state and then to variable range hopping(VRH)transport in the strong localization state has been observed.The transitions can be reflected in the measurement of resistivity and Seebeck coefficient.Negative magnetoresistance(NMR)emerges with the appearance of localization effect and is gradually suppressed in high magnetic field.The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH.The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect.Our findings show that RuAs_(2) is a suitable platform to study the localized state.

Variable range hopping conduction in n-CdSe samples at very low temperature

We reanalyzed experimental data already published in Friedman J R, Zhang Y, Dai P, et al. Phys Rev B, 1996, 53（15）： 9528. Variable range hopping （VRH） conduction in the insulating three-dimensional n-CdSe samples has been studied over the entire temperature range from 0.03 to 1 K. In the absence of a magnetic field, the low temperature conductivity a of the three samples （A, B and C） obeys the Mott VRH conduction with an appropriate temperature dependence in the prefactor （a = σ0 exp [- （T0/T）]^p with p ≈ 0.25）. This behavior can be explained by a VRH model where the transport occurs by hopping between localized states in the vicinity of the Fermi level, EF, without creation of the Coulomb gap （CG）. On the contrary, no Efros-Shklovskii VRH is observed, suggesting that the density is constant in the vicinity of the EF.

基于离散分数阶傅里叶变换的二维跳频通信系统及性能分析

传统跳频(FH)通信技术具有抗干扰能力强、截获概率低等优点,广泛应用在军民领域。针对检测传统跳频的手段越来越成熟,信息易被截获的问题,该文借鉴正交频分复用(OFDM)系统框架,提出一种基于离散分数阶傅里叶变换(DFrFT)的时宽与起始频率跳变的分数阶跳频(FrFT-FH-VTFB)系统,设计了一种新的系统框架,实现信息隐蔽传输的同时,通过DFrFT的工程实现规避传统跳频工程应用中跳速受频率合成器限制的问题。该系统通过两组不同伪随机序列选取时宽与起始频率跳变的Chirp基信号,实现系统参数的多维变换,打破系统的周期特性。此外,建立了系统发送与接收两端数学模型,并在此基础上推导了系统在白噪声信道下的理论误码率。仿真结果表明,该文所设计的系统有较好的抗衰落性能;且功率谱淹没在噪声之下,时频域特征无明显周期特性,有较好的隐蔽性。

Al^(3+)掺杂对La_(0.8)Sr_(0.2)Mn_(1-x)Al_(x)O_(3)电输运性能的影响

钙钛矿锰氧化物La_(1-x)Sr_(x)MnO_(3)(LSMO)作为一种代表性庞磁阻材料,在磁传感器等领域具有广阔的应用前景,但在低磁场和室温下很难获得显著的庞磁阻效应。为提高LSMO磁电阻效应和转变温度,本研究采用传统固相反应法制备了La_(0.8)Sr_(0.2)Mn_(1-x)Al_(x)O_(3)(0≤x≤0.25)(LSMAO)多晶样品,并系统分析了Al^(3+)掺杂对LSMO电输运性质和磁电阻效应的影响。X射线衍射(XRD)图谱表明LSMAO样品具有单一的菱方结构,属于R3C空间群。电输运性质研究发现,样品的电阻率随Al^(3+)的掺杂呈指数型上升,且外加磁场使金属-绝缘体转变温度有所提高。这可能是由于Al^(3+)稀释了Mn^(3+)/Mn^(4+)离子网络,在减少载流子数量的同时增加了磁无序。此外,LSMAO陶瓷的导电机理随Al^(3+)的掺杂从小极化子模型(Small polaron hopping model,SPH)转变成变程跳跃模型(Variable range hopping model,VRH),说明非磁性的Al^(3+)抑制了铁磁团簇间的载流子交换,使得小极化子热激活近邻跃迁过程被抑制。LSMAO的磁电阻效应从21.03%(x=0)增大到59.71%(x=0.25),证明Al^(3+)掺杂可有效增强LSMAO的磁电阻效应。

基于YOLOX的跳频信号检测

现有跳频信号检测算法大多针对固定参数的跳频信号检测,而面对可变参数的跳频信号检测时,其每跳时长及带宽的不确定性导致这些算法的适用性下降。为此,提出了一种基于YOLOX的跳频信号检测算法。该算法适用于固定参数跳频信号和可变参数跳频信号,判断跳频信号的存在性。首先将观测时间内的信号进行短时傅里叶变换获得灰度时频谱图;然后将时频谱图经过目标检测网络YOLOX,获得各个信号的预测框;最后根据跳频信号各跳点的时间连续性,筛选出跳频信号各个跳点,根据连续跳点个数判断跳频信号的存在性。对算法的检测流程进行了仿真,以验证算法的可行性。实验结果表明,该算法可以较好地完成盲检测任务,且能够通过增加较少的先验信息以提高检测性能。

La0．45Ca0．55MnO3电荷有序态下的磁电性质和再入型自旋玻璃行为

通过电阻率-温度(temperature dependence of resistivity,ρ-T)曲线、磁化强度-温度(temperature depen-dence of magnetization,M-T)曲线、ESR谱线的测量,研究了La0.45Ca0.55MnO3样品的电磁特性。结果表明,样品在整个测量温区呈现绝缘体行为,输运机制满足可变程跃迁模型。样品存在电荷有序(charge ordering,CO)相,相变温度TCO≈240K,并随温度降低发生顺磁(paramagnetism,PM)→电荷有序(CO)→反铁磁(antiferromagnetism,AFM)变化。值得注意的是,由于样品低温下存在多种复杂的磁相互作用,在40K发生自旋玻璃转变,表现为再入型自旋玻璃行为。

基于可变时隙与动态同步的端口跳变技术研究

通过分析一般端口跳变模型的关键技术,在固定跳变时隙的基础上,提出跳端口可变时隙算法。该算法实现了一种依据人工预设、实时通信质量检测以及网络入侵等条件下,进行反馈防御的机制。分析一般时钟同步算法,提出动态时钟漂移同步算法,解决了可变时钟漂移在端口跳变模型中对时间同步影响的问题,比传统固定时钟漂移算法具有更广泛的适用性,通过实验表明了其在网络防御中的有效性。

基于跳频通信的带通滤波器

在无线通信中使用跳频技术是军事通信中最主要的抗干扰手段之一,而如果系统中使用合适的中心频率可以快速跟踪跳频变化的带通滤波器将可以明显改善系统的抗干扰性能.介绍了一种用硅玻璃键合工艺制作的微型梁式可变电容器,设计并制作了由MEMS工艺实现的微型的静电驱动的可变电容器件,用这种方法制作的电容器件具有良好的线性、较小的滞后和稳定的工作特性.设计了可用于15～50kHz跳频应用的带通滤波器,可达到连续选频的目的.

液压足式机器人单腿变刚度控制弹跳研究

液压足式机器人由于其负载能力强,动态性能优越得到广泛的关注.针对液压足式机器人能量调节及其单腿弹跳运动控制问题,将液压足式机器人单腿等效为弹簧负载倒立摆(SLIP)模型,并提出了一种主动变刚度的控制策略,可以使液压足式机器人单腿在着地时刻进行能量调整,并使其达到期望的弹跳高度.实验结果表明,本文提出的控制方法可以实现液压足式机器人单腿稳定弹跳,并有效控制弹跳高度.

基于改进EASI算法的多跳频信号盲源分离

为了有效地解决多跳频信号的盲源分离问题,提出了一种变步长的EASI(Equivariant Adaptive Separation via Independence)盲源分离算法。该算法在传统EASI算法的等变化性基础上,用性能指标(串音误差)作为准则,通过改变函数的取值范围及形状,自适应更新步长,使其在一个固定小的范围内,达到算法收敛速度和稳定性能的一个较理想的平衡点,改善了当步长固定时存在的缺陷。经过实验仿真,证明该算法对步长有很好的调整能力,性能稳定且收敛速度较快,能很好地将多个跳频信号进行分离,较传统的EASI算法有更高的适用性。

La_(0.5)Ba_(0.5)CoO_3中Y的替代效应

用固相反应法制备了La0 .5-xYxBa0 .5CoO3多晶材料 ,系统研究了Y的替代对材料磁性和输运特性的影响 ,结果发现 ,Y的掺入主要产生了两种效应 ,一是Y向Co的 3d轨道产生了电荷转移 ,使分子磁矩下降 ,二是出现了Co离子的反铁磁交换作用 ,当Y含量少于或等于 0 .3时 ,材料中出现了自旋的非共线结构。当Y含量大于 0 .3时 ,材料从铁磁态为主转变为反铁磁态为主。对不同Y含量的材料 ,其导电机制都属于极化子的变程跳跃导电 ,随Y含量增加 ,材料电阻率迅速增大。

晶闸管控制的单相–三相变换器(英文)

提出一种单相电源供电时适用于异步电机传动的单相–三相变换器。由于仅采用7个晶闸管和1个移相电容,该变换装置具有造价低、结构简单的特点。分析该变换器的工作原理及开关过程,并提出一种基于开环变压变频(variable voltage variable frequency,VVVF)和变压恒频(variable voltage constant frequency,VVCF)控制的单相–三相离散跳频控制策略,用于电机的起动和稳态运行控制,一方面保证了电机在低频阶段足够大的起动力矩,另一方面可使电机稳步起动到额定转速。仿真和实验结果表明了该控制策略的有效性以及系统方案的可行性。

OCDMA系统中二维变重光正交码的设计及性能分析

以单重合序列作为波长跳频序列,严格变重光正交码作为时间扩频序列,构造一种新的跳频/扩时二维变重光正交码。对所构造二维码的自相关和互相关性能进行了详细分析,得出互相关均值的表达式,并对该二维地址码的多址干扰误码率进行了仿真比较和理论分析。结果表明,确定严格变重光正交码的参数和单重合序列的长度,增加波长数会增加码字容量并降低系统的误码率;确定单重合序列的参数和严格变重光正交码的码重和码字个数,增加码长将降低系统的误码率。

一种可变耦合数控跳频滤波器电路设计

针对宽带跳频滤波器在高低频率两种情况下插损的一致性、相对带宽一致性及驻波比都较差的情况,进行了研究和攻关。设计了一种提高跳频滤波器在高低频率段一致性的电路。该数控跳频滤波器由可变耦合控制电路和电调谐电路组成。耦合电路采用数字控制从而使得耦合系数可变。通过改变不同频率的耦合电感值来改变耦合系数,可以弥补跳频滤波器通过改变电容来调节滤波频率而引起的带宽、插损及驻波比一致性变差等问题。最后通过ADS仿真证明其性能可以达到设计指标要求。应用于带宽越宽的跳频滤波器性能变化越明显。此项技术的应用,可以解决传输信号在不同的频率段,出现信号时强时弱,时好时坏的问题。