The La-Sr-Mn-O films were deposited on Si（100） substrates by DC magnetron sputtering and followed by air annealing at 973 K for I h. The microstructure and temperature dependence of total hemispherical emittance （...The La-Sr-Mn-O films were deposited on Si（100） substrates by DC magnetron sputtering and followed by air annealing at 973 K for I h. The microstructure and temperature dependence of total hemispherical emittance （εH） of the annealed La-Sr-Mn-O films prepared at various processing parameters were investigated. The results indicated the films deposited at lower sputtering pressure and lower O2（O2＋Ar） volume proportion （R0） were present in rhombohedral .perovskite structure and the length of MnO bond was shorter. The metal-insulator transition temperature （TMI） was higher. All of the annealed films showed the unique feature of variable emittance based on metal-insulator transition. The films showed low emittance at low temperature but high emittance at high temperature. Moreover, the εH significantly changed in the vicinity of TMI. The variability of total hemispherical emittance （△ε） and the temperature range with obvious emittance change could be adjusted by changing the processing parameters. The Aε could be 0.45 and △ε/ε355 （ε355 is the εH at 355K） exceeded 50% for the annealed La-Sr-Mn-O films. Therefore, the annealed La-Sr-Mn-O films showed much potential for thermal control applications as smart thermochromic variable emittance materials.展开更多
基金Project supported by the Scientific Research Start-up Fund Project of Hohai University (20080403)Natural Science Fund of Hohai University (2008427911)Natural Scienctific Research Innovation Foundation in Harbin Institute of Technology (HIT NSRIF 2009030)
文摘The La-Sr-Mn-O films were deposited on Si（100） substrates by DC magnetron sputtering and followed by air annealing at 973 K for I h. The microstructure and temperature dependence of total hemispherical emittance （εH） of the annealed La-Sr-Mn-O films prepared at various processing parameters were investigated. The results indicated the films deposited at lower sputtering pressure and lower O2（O2＋Ar） volume proportion （R0） were present in rhombohedral .perovskite structure and the length of MnO bond was shorter. The metal-insulator transition temperature （TMI） was higher. All of the annealed films showed the unique feature of variable emittance based on metal-insulator transition. The films showed low emittance at low temperature but high emittance at high temperature. Moreover, the εH significantly changed in the vicinity of TMI. The variability of total hemispherical emittance （△ε） and the temperature range with obvious emittance change could be adjusted by changing the processing parameters. The Aε could be 0.45 and △ε/ε355 （ε355 is the εH at 355K） exceeded 50% for the annealed La-Sr-Mn-O films. Therefore, the annealed La-Sr-Mn-O films showed much potential for thermal control applications as smart thermochromic variable emittance materials.
