Polarization switching （PS） dynamics and synchronization performances of two mutually coupled vertical-cavity surface-emitting lasers （VCSELs） are studied theoretically in this paper. A group of dimensionless rate...Polarization switching （PS） dynamics and synchronization performances of two mutually coupled vertical-cavity surface-emitting lasers （VCSELs） are studied theoretically in this paper. A group of dimensionless rate equations is derived to describe our model. While analysing the PS characteristics, we focus on the effects of coupling rate and frequency detuning regarding different mutual injection types. The results indicate that the x-mode injection defers the occurrence of PS, while the y-mode injection leads the PS to occur at a lower current. Strong enough polarization-selective injection can suppress the PS. Moreover, if frequency detuning is considered, the effects of polarization-selective mutual injection will be weakened. To evaluate the synchronization performance, the correlation coefficients and output dynamics of VCSELs with both pure mode and mixed mode polarizations are given. It is found that performance of complete synchronization is sensitive to the frequency mismatch but it is little affected by mixed mode polarizations, which is opposite to the case of injection-locking synchronization.展开更多
It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser （VCSEL）. However, it is generally diff...It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser （VCSEL）. However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty h, deriving the parameters relat^i~g to the quantum well structure. In this paper, we describe an efl：icient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AllnGaAs-AIGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs.展开更多
Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity ...Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser （VCSEL） in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al0.98Ga0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.展开更多
The influence of external optical feedback （OFB） on the light-current characteristics of the vertical-cavity surface-emitting lasers （VCSELs） was investigated theoretically and experimentally. By calculating the O...The influence of external optical feedback （OFB） on the light-current characteristics of the vertical-cavity surface-emitting lasers （VCSELs） was investigated theoretically and experimentally. By calculating the OFB sensitivity parameter, the OFB sensibility of the VCSELs was compared with the edge emitting lasers. Based on the compound cavity theory, the light-current characteristic parameters of the VCSELs with external OFB, such as the threshold current and the slope efficiency, were calculated. The experimental results indicated that the threshold current of the VCSELs with different DBR refleetivities decreased to different degrees, accompanied with a decrease of slope efficiency when under 10% feedback ratio of the external OFB, which is in good agreement with the theoretical calculation.展开更多
We perform a theoretical study on the polarization-resolved compound lasing mode （CLM） of two mutually coupled vertical-cavity surface-emitting lasers （VCSELs）. Different solutions of CLMs are derived though stabi...We perform a theoretical study on the polarization-resolved compound lasing mode （CLM） of two mutually coupled vertical-cavity surface-emitting lasers （VCSELs）. Different solutions of CLMs are derived though stability analysis of the spin-flip model. The dynamical evolvements of CLMs with the existence of polarization degrees of freedom are also charactered. The most stable CLM with the smallest carrier density tend to be excited, since the gain needed for this mode to emit is the lowest. In the given system, varying values of injection rate or birefringence, etc., will change the generation of the preferred CLMs in the two polarization directions, and thus influence the polarization switching （PS） characteristics. Thus, hoppings between CLMs are also companied by PSs. Through mapping of average power in the parameter space, the influences of coupling rate and anisotropy parameters （linear dichroism and linear birefringence） on PS and hopping between CLMs are discussed.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10174057 and 90201011）, and the Foundation for Key Program of Ministry of Education, China （Grant No 2005-105148）.
文摘Polarization switching （PS） dynamics and synchronization performances of two mutually coupled vertical-cavity surface-emitting lasers （VCSELs） are studied theoretically in this paper. A group of dimensionless rate equations is derived to describe our model. While analysing the PS characteristics, we focus on the effects of coupling rate and frequency detuning regarding different mutual injection types. The results indicate that the x-mode injection defers the occurrence of PS, while the y-mode injection leads the PS to occur at a lower current. Strong enough polarization-selective injection can suppress the PS. Moreover, if frequency detuning is considered, the effects of polarization-selective mutual injection will be weakened. To evaluate the synchronization performance, the correlation coefficients and output dynamics of VCSELs with both pure mode and mixed mode polarizations are given. It is found that performance of complete synchronization is sensitive to the frequency mismatch but it is little affected by mixed mode polarizations, which is opposite to the case of injection-locking synchronization.
文摘It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser （VCSEL）. However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty h, deriving the parameters relat^i~g to the quantum well structure. In this paper, we describe an efl：icient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AllnGaAs-AIGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs.
文摘Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser （VCSEL） in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al0.98Ga0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.
基金supported by the National Natural Science Foundation of China(Nos.60636020,10974012,60876036,90923037,60676034, 60706007)the Jilin Province Science and Technology Development Plan Item(Nos.20080335,20080516)the CAS Innovation Program.
文摘The influence of external optical feedback （OFB） on the light-current characteristics of the vertical-cavity surface-emitting lasers （VCSELs） was investigated theoretically and experimentally. By calculating the OFB sensitivity parameter, the OFB sensibility of the VCSELs was compared with the edge emitting lasers. Based on the compound cavity theory, the light-current characteristic parameters of the VCSELs with external OFB, such as the threshold current and the slope efficiency, were calculated. The experimental results indicated that the threshold current of the VCSELs with different DBR refleetivities decreased to different degrees, accompanied with a decrease of slope efficiency when under 10% feedback ratio of the external OFB, which is in good agreement with the theoretical calculation.
基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20070613058)the Foundation for Key Program of the Ministry of Education, China (Grant No. 105148)and the Doctoral Innovation Fund of Southwest Jiaotong University
文摘We perform a theoretical study on the polarization-resolved compound lasing mode （CLM） of two mutually coupled vertical-cavity surface-emitting lasers （VCSELs）. Different solutions of CLMs are derived though stability analysis of the spin-flip model. The dynamical evolvements of CLMs with the existence of polarization degrees of freedom are also charactered. The most stable CLM with the smallest carrier density tend to be excited, since the gain needed for this mode to emit is the lowest. In the given system, varying values of injection rate or birefringence, etc., will change the generation of the preferred CLMs in the two polarization directions, and thus influence the polarization switching （PS） characteristics. Thus, hoppings between CLMs are also companied by PSs. Through mapping of average power in the parameter space, the influences of coupling rate and anisotropy parameters （linear dichroism and linear birefringence） on PS and hopping between CLMs are discussed.
基金Project supported by the National Science Foundation of China under Contract Number NSFC(60636020,60676034,60706007)Project supported by CAS Innovation ProgramNational Science Foundation of Jilin Province(20080335,20086011)~~
