Two parameterization schemes for vertical eddy diffusivity were utilized to investigate their impacts on both the daily and monthly mean concentrations of ozone and NOy, which are the major fractions of the sum of all...Two parameterization schemes for vertical eddy diffusivity were utilized to investigate their impacts on both the daily and monthly mean concentrations of ozone and NOy, which are the major fractions of the sum of all reactive nitrogen species, i.e., NOy=NO+NO2+HNO3+PAN. Simulations indicate that great changes in the vertical diffusivity usually occur within the planetary boundary layer (PBL). Daily and monthly mean concentrations of NOy are much more sensitive to changes in the vertical diffusivity than those of ozone and ozone and NOy levels only at or in (relatively) clean sites and areas, where long-range transport plays a crucial role, display roughly equivalent sensitivity. The results strongly suggest that a widely-accepted parameterization scheme be selected and the refinement of the model's vertical resolution in the PBL be required, even for regional and long-term studies, and ozone only being examined in an effort to judge the model's performance be unreliable, and NOy be included for model evaluations.展开更多
Two important nonlinear properties of seawater thermodynamics linked to changes of water density, cab beling and elasticity (compressibility), are discussed. Eddy diffusion and advection lead to changes in den sity;...Two important nonlinear properties of seawater thermodynamics linked to changes of water density, cab beling and elasticity (compressibility), are discussed. Eddy diffusion and advection lead to changes in den sity; as a result, gravitational potential energy of the system is changed. Therefore, cabbeling and elasticity play key roles in the energetics of lateral eddy diffusion and advection. Vertical eddy diffusion is one of the key elements in the mechanical energy balance of the global oceans. Vertical eddy diffusion can be con ceptually separated into two steps: stirring and subscale diffusion. Vertical eddy stirring pushes cold/dense water upward and warm/light water downward; thus, gravitational potential energy is increased. During the second steps, water masses from different places mix through subscale diffusion, and water density is increased due to cabbeling. UsingWOA01 climatology and assuming the vertical eddy diffusivity is equal to a constant value of 2x103 pa2/s, the total amount of gravitational potential energy increase due to vertical stirring in the world oceans is estimated at 263 GW. Cabbeling associated with vertical subscale diffusion is a sink of gravitational potential energy, and the total value of energy lost is estimated at 73 GW. Therefore, the net source of gravitational potential energy due to vertical eddy diffusion for the world oceans is estimated at 189 GW.展开更多
Diapycnal mixing is important in oceanic circulation. An inverse method in which a semi-explicit scheme is applied to discretize the one-dimensional temperature diffusion equation is established to estimate the vertic...Diapycnal mixing is important in oceanic circulation. An inverse method in which a semi-explicit scheme is applied to discretize the one-dimensional temperature diffusion equation is established to estimate the vertical temperature diffusion coefficient based on the observed temperature profiles. The sensitivity of the inverse model in the idealized and actual conditions is tested in detail. It can be found that this inverse model has high feasibility under multiple situations ensuring the stability of the inverse model, and can be considered as an efficient way to estimate the temperature diffusion coefficient in the weak current regions of the ocean. Here, the hydrographic profiles from Argo floats are used to estimate the temporal and spatial distribution of the vertical mixing in the north central Pacific based on this inverse method. It is further found that the vertical mixing in the upper ocean displays a distinct seasonal variation with the amplitude decreasing with depth, and the vertical mixing over rough topography is stronger than that over smooth topography It is suggested that the high-resolution profiles from Argo floats and a more reasonable design of the inverse scheme will serve to understand mixing processes.展开更多
A sub circuit model for VDMOS is built according to its physical structure.Parameters and formulas describing the device are also derived from this model.Comparing to former results,this model avoids too many technic...A sub circuit model for VDMOS is built according to its physical structure.Parameters and formulas describing the device are also derived from this model.Comparing to former results,this model avoids too many technical parameters and simplify the sub circuit efficiently.As a result of numeric computation,this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response (DC error within 5%,AC error within 10%).Such a model is now available for circuit simulation and parameter extraction.展开更多
A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VD...A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.展开更多
基金the National Natural Science Foundation of China (Grant No. 40575068) the National Key Project of Basic Research of China (Grant No. 2005CB422205) the Knowledge Innovation Project of Chinese Academy of Sciences (Grant No. KZCX2-YW-205).
文摘Two parameterization schemes for vertical eddy diffusivity were utilized to investigate their impacts on both the daily and monthly mean concentrations of ozone and NOy, which are the major fractions of the sum of all reactive nitrogen species, i.e., NOy=NO+NO2+HNO3+PAN. Simulations indicate that great changes in the vertical diffusivity usually occur within the planetary boundary layer (PBL). Daily and monthly mean concentrations of NOy are much more sensitive to changes in the vertical diffusivity than those of ozone and ozone and NOy levels only at or in (relatively) clean sites and areas, where long-range transport plays a crucial role, display roughly equivalent sensitivity. The results strongly suggest that a widely-accepted parameterization scheme be selected and the refinement of the model's vertical resolution in the PBL be required, even for regional and long-term studies, and ozone only being examined in an effort to judge the model's performance be unreliable, and NOy be included for model evaluations.
文摘Two important nonlinear properties of seawater thermodynamics linked to changes of water density, cab beling and elasticity (compressibility), are discussed. Eddy diffusion and advection lead to changes in den sity; as a result, gravitational potential energy of the system is changed. Therefore, cabbeling and elasticity play key roles in the energetics of lateral eddy diffusion and advection. Vertical eddy diffusion is one of the key elements in the mechanical energy balance of the global oceans. Vertical eddy diffusion can be con ceptually separated into two steps: stirring and subscale diffusion. Vertical eddy stirring pushes cold/dense water upward and warm/light water downward; thus, gravitational potential energy is increased. During the second steps, water masses from different places mix through subscale diffusion, and water density is increased due to cabbeling. UsingWOA01 climatology and assuming the vertical eddy diffusivity is equal to a constant value of 2x103 pa2/s, the total amount of gravitational potential energy increase due to vertical stirring in the world oceans is estimated at 263 GW. Cabbeling associated with vertical subscale diffusion is a sink of gravitational potential energy, and the total value of energy lost is estimated at 73 GW. Therefore, the net source of gravitational potential energy due to vertical eddy diffusion for the world oceans is estimated at 189 GW.
基金The Program for New Century Excellent Talents in University of the Ministry of Education under contract No.NCET-10-0764the National High Technology Research and Development Program of China(863 Program)under contract No.2013AA09A502the National Natural Science Foundation of China under contract Nos 40876015 and 41176010
文摘Diapycnal mixing is important in oceanic circulation. An inverse method in which a semi-explicit scheme is applied to discretize the one-dimensional temperature diffusion equation is established to estimate the vertical temperature diffusion coefficient based on the observed temperature profiles. The sensitivity of the inverse model in the idealized and actual conditions is tested in detail. It can be found that this inverse model has high feasibility under multiple situations ensuring the stability of the inverse model, and can be considered as an efficient way to estimate the temperature diffusion coefficient in the weak current regions of the ocean. Here, the hydrographic profiles from Argo floats are used to estimate the temporal and spatial distribution of the vertical mixing in the north central Pacific based on this inverse method. It is further found that the vertical mixing in the upper ocean displays a distinct seasonal variation with the amplitude decreasing with depth, and the vertical mixing over rough topography is stronger than that over smooth topography It is suggested that the high-resolution profiles from Argo floats and a more reasonable design of the inverse scheme will serve to understand mixing processes.
文摘A sub circuit model for VDMOS is built according to its physical structure.Parameters and formulas describing the device are also derived from this model.Comparing to former results,this model avoids too many technical parameters and simplify the sub circuit efficiently.As a result of numeric computation,this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response (DC error within 5%,AC error within 10%).Such a model is now available for circuit simulation and parameter extraction.
基金Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017)111 Project(Grant No.B12026)。
文摘A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.