High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator （SOI） power lateral MOSFET with a dual vertical field plate （VFP） in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage （BV） and specific on-resistance （Ron,sp）. The mechanism of the VFP is analyzed and the characteristics of BV and Ron,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the Ron,sp decreases from 366 mΩ·cm2 to 110 mΩ·cm2.

Application of graphene vertical field effect to regulation of organic light-emitting transistors

The luminescence intensity regulation of organic light-emitting transistor(OLED)device can be achieved effectively by the combination of graphene vertical field effect transistor(GVFET)and OLED.In this paper,we fabricate and characterize the graphene vertical field-effect transistor with gate dielectric of ion-gel film,confirming that its current switching ratio reaches up to 102.Because of the property of high light transmittance in ion-gel film,the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical properties.We also prepare the graphene vertical organic light-emitting field effect transistor(GVOLEFET)by the combination of GVFET and graphene OLED,analyzing its electrical and optical properties,and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.

Si–Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications

A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.

Ultralow specific ON-resistance high-k LDMOS with vertical field plate

An ultralow specific on-resistance high-k LDMOS with vertical field plate（VFP HK LDMOS） is proposed. The high-k dielectric trench and highly doped interface N＋ layer are made in bulk silicon to reduce the surface field of the drift region in the VFP HK LDMOS. The gate vertical field plate（VFP） pinning in the high-k dielectric trench can modulate the bulk electric field. The high-k dielectric not only provides polarized charges to assist depletion of the drift region, so that the drift region and high-k trench maintain charge balance adaptively,but also can fully assist in depleting the drift region to increase the drift doping concentration and reshape the electric field to avoid premature breakdown. Compared with the conventional structure, the VFP HK LDMOS has the breakdown voltage of 629.1 V at the drift length of 40 μm and the specific on-resistance of 38.4 mΩ·cm^2 at the gate potential of 15 V. Then the power figure of merit is 10.31 MW/cm^2.

An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field（REBULF） lateral double-diffused metal–oxide-semiconductor（LDMOS） transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail.The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field（RESURF） LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate.

Construction of Vertical Wind Profile from Satellite-Derived Winds for Objective Analysis of Wind Field

During summer Monex-79, a variety of observing systems viz. research ships, research aircrafts, constant pressure balloons and geostationary satellite etc. were deployed, besides the regular conventional observations. The purpose of these additional systems was to make the best possible data for the studies on various aspects of monsoon circulation. The present study is aimed at the construction of vertical wind profile using cloud motion vectors obtained from GOES (I-O) satellite and to examine whether the constructed wind profiles improves the representation of the monsoon system, flow pattern etc. in the objective analysis. For this purpose, climatological normals of the wind field are considered as the initial guess and the objective analyses of the wind field are made with, first using only data from conventional observations over land areas, subsequently including the constructed winds from cloud motion vectors. These analyses are then compared with the standard analyses of wind field obtained from Quick Look Atlas by T. N. Krishnamurti et al. (1979).It is inferred that satellite estimated mean wind profiles show good agreement with the mean wind profiles of the research ships with RMS errors less than 5 mps below 500 hPa and less than 8 mps above 500 hPa. It is further inferred that the inclusion of constructed winds shows a positive impact on the objective analysis and improvement is seen to be more marked in the data-sparse region of the Arabian sea. Analyses which include the constructed winds show better agreement with the standard analysis, than the analyses obtained using only conventional winds. Thus, results of our study suggest that the wind profiles constructed using cloud motion vectors are of potential use in objective analysis to depict the major circulation features over the Indian region.

Impact of the Vertical Velocity Field on Charging Processes and Charge Separation in a Simulated Thunderstorm

A three-dimensional（3D） charging-discharging cloud resolution model was used to investigate the impact of the vertical velocity field on the charging processes and the formation of charge structure in a strong thunderstorm. The distribution and evolution of ice particle content and charges on ice particles were analyzed in different vertical velocity fields. The results show that the ice particles in the vertical velocity range from 1 to 5 m s-1obtained the most charge through charging processes during the lifetime of the thunderstorm. The magnitude of the charges could reach 1014 n C. Before the beginning of lightning activity,the charges produced in updraft region 2（updraft speed 13 m s-1） and updraft region 1（updraft speed between 5 and 13 m s-1） were relatively significant. The magnitudes of charge reached 1013 n C, which clearly impacted upon the early lightning activity. The vertical velocity conditions in the quasi-steady region（updraft speed between -1 and 1 m s-1） were the most conducive for charge separation on ice particles on different scales. Accordingly, a net charge structure always appeared in the quasi-steady and adjacent regions. Based on the results, a conceptual model of ice particle charging, charge separation, and charge structure formation in the flow field was constructed. The model helps to explain observations of the＂lightning hole＂ phenomenon.

Effects of vertical electric field and compressive strain on electronic properties of bilayer ZrS2

Using first-principles calculations,including Grimme D2 method for van der Waals interactions,we investigate the tuning electronic properties of bilayer zirconium disulfides（ZrS_2/ subjected to vertical electric field and normal compressive strain.The band gap of ZrS_2 bilayer can be flexibly tuned by vertical external electric field.Due to the Stark effect,at critical electric fields about 1.4 V/？,semiconducting-metallic transition presents.In addition,our results also demonstrated that the compressive strain has an important impact on the electronic properties of ZrS_2 bilayer sheet.The widely tunable band gaps confirm possibilities for its applications in electronics and optoelectronics.

A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary state of affairs across the drain and source.The TMDG TFET device is used to analyze the electrical performance of the TMDG structure in terms of changes in potential voltage,lateral and vertical electric field.Because the TMDG TFET has a simple compact structure,the surface potential is computationally efficient and,therefore,may be utilized to analyze and characterize the gate-controlled devices.Furthermore,using Kane's model,the current across the drain can be modeled.The graph results achieved from this device model are close to the data collected from the technology computer aided design(TCAD)simulation.

Rupture area analysis of the Ecuador (Musine) Mw = 7.8 thrust earthquake on April 16, 2016, using GOCE derived gradients

The Ecuador Mw - 7.8 earthquake on April 16, 2016, ruptured a nearly 200 km long zone along the plate interface between Nazca and South American plates which is coincident with a seismic gap since 1942, when a Mw - 7.8 earthquake happened. This earthquake occurred at a margin characterized by moderately big to giant earthquakes such as the 1906 （Mw 8.8）. A heavily sedimented trench explains the abnormal lengths of the rupture zones in this system as inhibits the role of natural barriers on the propagation of rupture zones. High amount of sediment thickness is associated with tropical climates, high erosion rates and eastward Pacific dominant winds that provoke orographic rainfalls over the Pacific slope of the Ecuatorian Andes. Offshore sediment dispersion off the oceanic trench is controlled by a close arrangement of two aseismic ridges that hit the Costa Rico and South Ecuador margin respectively and a mid ocean ridge that separates the Cocos and Nazca plate trapping sediments. Gravity field and Ocean Circulation Explorer （GOCE） satellite data are used in this work to test the possible relationship between gravity signal and earthquake rupture structure as well as registered aftershock seismic activity. Reduced vertical gravity gradient shows a good correlation with rupture structure for certain degrees of the harmonic expansion and related depth of the causative mass; indicating, such as in other analyzed cases along the subduction margin, that fore-arc structure derived from density heterogeneities explains at a certain extent propagation of the rupture zones. In this analysis the rupture zone of the April 2016 Ecuador earthquake developed through a relatively low density zone of the fore-arc sliver. Finally, aftershock sequence nucleated around the area of maximum slips in the rupture zone, suggesting that heterogeneous density structure of the fore-arc determined from gravity data could be used in forecasting potential damaged zones associated with big ruptures along the subduction border.