For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacemen...For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.展开更多
An integrated micro positioning xy-stage with a 2mm × 2mm-area shuttle is fabricated for application in nano- meter-scale operation and nanometric positioning precision. It is mainly composed of a silicon-based x...An integrated micro positioning xy-stage with a 2mm × 2mm-area shuttle is fabricated for application in nano- meter-scale operation and nanometric positioning precision. It is mainly composed of a silicon-based xy-stage,electrostatics comb actuator,and a displacement sensor based on a vertical sidewall surface piezoresistor. They are all in a monolithic chip and developed using double-sided bulk-micromachining technology. The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching （DRIE） in both sides of the wafer. The detecting piezoresistor is located at the vertical sidewall surface of the detecting beam to improve the sensitivity and displacement resolution of the piezoresistive sensors using the DRIE technology combined with the ion implantation technology. The experimental results verify the integrated micro positioning xy-stage design including the micro xy-stage, electrostatics comb actuator,and the vertical sidewall surface piezoresistor technique. The sensitivity of the fabricated piezoresistive sensors is better than 1.17mV/μm without amplification and the linearity is better than 0. 814%. Under 30V driving voltage, a ± 10vm single-axis displacement is measured without crosstalk and the resonant frequency is measured at 983Hz in air.展开更多
基金Funded by the High Technology Research and Development Programme of China (2007AA04Z315)
文摘For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.
文摘An integrated micro positioning xy-stage with a 2mm × 2mm-area shuttle is fabricated for application in nano- meter-scale operation and nanometric positioning precision. It is mainly composed of a silicon-based xy-stage,electrostatics comb actuator,and a displacement sensor based on a vertical sidewall surface piezoresistor. They are all in a monolithic chip and developed using double-sided bulk-micromachining technology. The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching （DRIE） in both sides of the wafer. The detecting piezoresistor is located at the vertical sidewall surface of the detecting beam to improve the sensitivity and displacement resolution of the piezoresistive sensors using the DRIE technology combined with the ion implantation technology. The experimental results verify the integrated micro positioning xy-stage design including the micro xy-stage, electrostatics comb actuator,and the vertical sidewall surface piezoresistor technique. The sensitivity of the fabricated piezoresistive sensors is better than 1.17mV/μm without amplification and the linearity is better than 0. 814%. Under 30V driving voltage, a ± 10vm single-axis displacement is measured without crosstalk and the resonant frequency is measured at 983Hz in air.
