The interconnect temperature of very large scale integration（VLSI） circuits keeps rising due to self-heating and substrate temperature, which can increase the delay and power dissipation of interconnect wires. The t...The interconnect temperature of very large scale integration（VLSI） circuits keeps rising due to self-heating and substrate temperature, which can increase the delay and power dissipation of interconnect wires. The thermal vias are regarded as a promising method to improve the temperature performance of VLSI circuits. In this paper, the extra thermal vias were used to decrease the delay and power dissipation of interconnect wires of VLSI circuits. Two analytical models were presented for interconnect temperature, delay and power dissipation with adding extra dummy thermal vias. The influence of the number of thermal vias on the delay and power dissipation of interconnect wires was analyzed and the optimal via separation distance was investigated. The experimental results show that the adding extra dummy thermal vias can reduce the interconnect average temperature, maximum temperature, delay and power dissipation. Moreover, this method is also suitable for clock signal wires with a large root mean square current.展开更多
This paper proposes a low-power MOS current mode logic （MCML） circuit with sleep-transistor to reduce the leakage current. The sleep-transistor is used to high-threshold voltage transistor to minimize the leakage cu...This paper proposes a low-power MOS current mode logic （MCML） circuit with sleep-transistor to reduce the leakage current. The sleep-transistor is used to high-threshold voltage transistor to minimize the leakage current. The 16× 16 bit parallel multiplier is designed with the proposed technology. Comparing with the previous MCML circuit, the circuit achieves the reduction of the power consumption in sleep mode by 1/258. This circuit is designed with Samsung 0.35 um complementary metal oxide semiconductor （CMOS） process. The validity and effectiveness are verified through the HSPICE simulation.展开更多
Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low...Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.展开更多
基金Supported by the Guangdong Provincial Natural Science Foundation of China(2014A030313441)the Guangzhou Science and Technology Project(201510010169)+1 种基金the Guangdong Province Science and Technology Project(2016B090918071,2014A040401076)the National Natural Science Foundation of China(61072028)
文摘The interconnect temperature of very large scale integration（VLSI） circuits keeps rising due to self-heating and substrate temperature, which can increase the delay and power dissipation of interconnect wires. The thermal vias are regarded as a promising method to improve the temperature performance of VLSI circuits. In this paper, the extra thermal vias were used to decrease the delay and power dissipation of interconnect wires of VLSI circuits. Two analytical models were presented for interconnect temperature, delay and power dissipation with adding extra dummy thermal vias. The influence of the number of thermal vias on the delay and power dissipation of interconnect wires was analyzed and the optimal via separation distance was investigated. The experimental results show that the adding extra dummy thermal vias can reduce the interconnect average temperature, maximum temperature, delay and power dissipation. Moreover, this method is also suitable for clock signal wires with a large root mean square current.
文摘This paper proposes a low-power MOS current mode logic （MCML） circuit with sleep-transistor to reduce the leakage current. The sleep-transistor is used to high-threshold voltage transistor to minimize the leakage current. The 16× 16 bit parallel multiplier is designed with the proposed technology. Comparing with the previous MCML circuit, the circuit achieves the reduction of the power consumption in sleep mode by 1/258. This circuit is designed with Samsung 0.35 um complementary metal oxide semiconductor （CMOS） process. The validity and effectiveness are verified through the HSPICE simulation.
文摘Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.
