Ternary Ti-B-N coatings were synthesized on AISI 304 and Si wafer by plasma-enhanced chemical vapor deposition (PECVD) technique using a gaseous mixture of TiCl4,BCl3,H2,N2,and Ar.By virtue of X-ray diffraction analys...Ternary Ti-B-N coatings were synthesized on AISI 304 and Si wafer by plasma-enhanced chemical vapor deposition (PECVD) technique using a gaseous mixture of TiCl4,BCl3,H2,N2,and Ar.By virtue of X-ray diffraction analysis,X-ray photoelectron spectroscopy,scanning electron microscope,and high-resolution transmission electron microscope,the influences of B content on the microstructure and properties of Ti B N coatings were investigated systematically.The results indicated that the microstructure and mechanical properties of Ti-B-N coatings largely depend on the transformation from FCC-TiN phase to HCP-TiB2 phase.With increasing B content and decreasing N content in the coatings,the coating microstructure evolves gradually from FCC-TiN/a-BN to HCP-TiB2 /a-BN via FCC-TiN+HCP-TiB2/a-BN.The highest microhardness of about 34 GPa is achieved,which corresponds to the nanocomposite Ti-63%B-N (mole fraction) coating consisting of the HCP-TiB2 nano-crystallites and amorphous BN phase.The lowest friction-coefficient was observed for the nanocomposite Ti-41%B-N (mole fraction) coating consisting of the FCC-TiN nanocrystallites and amorphous BN展开更多
The effective parameters on the diameter of carbon nanotubes (CNTs) by plasma enhanced chemical vapor deposition (PECVD) were presented.Among lots of influential parameters,the effects of the catalytic film thickness ...The effective parameters on the diameter of carbon nanotubes (CNTs) by plasma enhanced chemical vapor deposition (PECVD) were presented.Among lots of influential parameters,the effects of the catalytic film thickness and the pretreatment plasma power on the growth of CNTs were investigated.The results show that the size of catalytic islands increases by increasing the thickness of catalytic layer,but the density of CNTs decreases.The pretreatment duration time of 30 s is the optimal condition for growing CNTs with about 50 nm in diameter.By increasing the pretreatment plasma power,the diameter of CNTs decreases gradually.However,the diameter of CNTs does not change drastically from 80 to 120 W.The uniformly grown CNTs with the diameter of 50 nm are obtained at the pretreatment plasma power of 100 W.展开更多
SiNx：H films with different N/Si ratios are synthesized by plasma-enhanced chemical vapor deposition （PECVD）. Composition and structure characteristics are detected by Fourier transform infrared spectroscopy （FTIR...SiNx：H films with different N/Si ratios are synthesized by plasma-enhanced chemical vapor deposition （PECVD）. Composition and structure characteristics are detected by Fourier transform infrared spectroscopy （FTIR） and X-ray photoelectron spectroscopy （XPS）. It indicates that Si-N bonds increase with increased NH3/SiH4 ratio. Electrical property investigations by I-V measurements show that the prepared films offer higher resistivity and less leakage current with increased N/Si ratio and exhibit entirely insulating properties when N/Si ratio reaches 0.9, which is ascribed to increased Si-N bonds achieved.展开更多
The structural evolution and optical characterization of hydrogenated silicon(Si:H) thin films obtained by conventional radio frequency(RF) plasma enhanced chemical vapor deposition(PECVD) through decomposition of sil...The structural evolution and optical characterization of hydrogenated silicon(Si:H) thin films obtained by conventional radio frequency(RF) plasma enhanced chemical vapor deposition(PECVD) through decomposition of silane diluted with argon were studied by X-ray diffractometry(XRD),Fourier transform infrared(FTIR) spectroscopy,Raman spectroscopy,transmission electron microscopy(TEM),and ultraviolet and visible(UV-vis) spectroscopy,respectively.The influence of argon dilution on the optical properties of the thin films was also studied.It is found that argon as dilution gas plays a significant role in the growth of nano-crystal grains and amorphous network in Si:H thin films.The structural evolution of the thin films with different argon dilution ratios is observed and it is suggested that argon plasma leads to the nanocrystallization in the thin films during the deposition process.The nanocrystallization initiating at a relatively low dilution ratio is also observed.With the increase of argon portion in the mixed precursor gases,nano-crystal grains in the thin films evolve regularly.The structural evolution is explained by a proposed model based on the energy exchange between the argon plasma constituted with Ar* and Ar+ radicals and the growth regions of the thin films.It is observed that both the absorption of UV-vis light and the optical gap decrease with the increase of dilution ratio.展开更多
Titanium dioxide is coated on the surface of MCM-41 wafer through the plasma enhanced chemical vapor deposition （PECVD） method using titanium isopropoxide （TTIP） as a precursor. Annealing temperature is a key fact...Titanium dioxide is coated on the surface of MCM-41 wafer through the plasma enhanced chemical vapor deposition （PECVD） method using titanium isopropoxide （TTIP） as a precursor. Annealing temperature is a key factor affecting crystal phase of titanium dioxide. It will transform an amorphous structure to a polycrystalline structure by increasing temperature. The optimum anatase phase of TiO2 which can acquire the best methanol conversion under UV-light irradiation is obtained under an annealing temperature of 700℃ for 2 h, substrate tem- perature of 500~C, 70 mL. min1 of oxygen flow rate, and 100W of plasma power. In addition, the films are composed of an anatase-rutile mixed phase, and the ratio of anatase to rutile varies with substrate temperature and oxygen flow rate. The particle sizes of titanium dioxide are between 30.3 nm and 59.9nm by the calculation of Scherrer equation. Under the reaction conditions of ll6.8mg.L-1 methanol, 2.9mg.L-1 moisture, and 75~C of reaction temperature, the best conversion of methanol with UV-light is 48.2% by using the anatase-rutile （91.3/ 8.7） mixed phase TiO2 in a batch reactor for 60 min. While under fluorescent light irradiation, the best photoactivity appears by using the anatase-rutile （55.4/44.6） mixed phase TiO2 with a conversion of 40.0%.展开更多
Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate ...Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.展开更多
Raman spectra and scanning electron microscope （SEM） techniques were used to determine the structural properties of microcrb＇stalline silicon （μc-Si：H） films deposited on different substrates with the very high...Raman spectra and scanning electron microscope （SEM） techniques were used to determine the structural properties of microcrb＇stalline silicon （μc-Si：H） films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer, coming 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Coming 7059 glass, the surfaces of the μc-Si：H films are fairly smooth because of the homogenous growth or h＇ttle lattice mismatch. But for general optical glass, the surface of the μ-Si： H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si：H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material and then the deposition rates, optical and electrical properties are also strongly influenced, hence, deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si：H films with device-grade quality on cheap substrates such as general glass.展开更多
基金funded by a grant from the National Core Research Center(NCRC)Program through the National Research Foundation of Korea funded by the Ministry of Education,Science and Technology(No.2012-0000-957)by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy,Republic of Korea
文摘Ternary Ti-B-N coatings were synthesized on AISI 304 and Si wafer by plasma-enhanced chemical vapor deposition (PECVD) technique using a gaseous mixture of TiCl4,BCl3,H2,N2,and Ar.By virtue of X-ray diffraction analysis,X-ray photoelectron spectroscopy,scanning electron microscope,and high-resolution transmission electron microscope,the influences of B content on the microstructure and properties of Ti B N coatings were investigated systematically.The results indicated that the microstructure and mechanical properties of Ti-B-N coatings largely depend on the transformation from FCC-TiN phase to HCP-TiB2 phase.With increasing B content and decreasing N content in the coatings,the coating microstructure evolves gradually from FCC-TiN/a-BN to HCP-TiB2 /a-BN via FCC-TiN+HCP-TiB2/a-BN.The highest microhardness of about 34 GPa is achieved,which corresponds to the nanocomposite Ti-63%B-N (mole fraction) coating consisting of the HCP-TiB2 nano-crystallites and amorphous BN phase.The lowest friction-coefficient was observed for the nanocomposite Ti-41%B-N (mole fraction) coating consisting of the FCC-TiN nanocrystallites and amorphous BN
基金Project supported by a 2-Year Research Grant of Pusan National UniversityProject(2011-0006257)supported by National Core Research Center(NCRC)Program through the National Research Foundation of Korea funded by the Ministry of Education,Science and Technology
文摘The effective parameters on the diameter of carbon nanotubes (CNTs) by plasma enhanced chemical vapor deposition (PECVD) were presented.Among lots of influential parameters,the effects of the catalytic film thickness and the pretreatment plasma power on the growth of CNTs were investigated.The results show that the size of catalytic islands increases by increasing the thickness of catalytic layer,but the density of CNTs decreases.The pretreatment duration time of 30 s is the optimal condition for growing CNTs with about 50 nm in diameter.By increasing the pretreatment plasma power,the diameter of CNTs decreases gradually.However,the diameter of CNTs does not change drastically from 80 to 120 W.The uniformly grown CNTs with the diameter of 50 nm are obtained at the pretreatment plasma power of 100 W.
文摘SiNx：H films with different N/Si ratios are synthesized by plasma-enhanced chemical vapor deposition （PECVD）. Composition and structure characteristics are detected by Fourier transform infrared spectroscopy （FTIR） and X-ray photoelectron spectroscopy （XPS）. It indicates that Si-N bonds increase with increased NH3/SiH4 ratio. Electrical property investigations by I-V measurements show that the prepared films offer higher resistivity and less leakage current with increased N/Si ratio and exhibit entirely insulating properties when N/Si ratio reaches 0.9, which is ascribed to increased Si-N bonds achieved.
基金Project(60425101) supported by the National Outstanding Young Scientists Foundation of ChinaProject(06DZ0241) supported by the Science Foundation of General Armament Department of China
文摘The structural evolution and optical characterization of hydrogenated silicon(Si:H) thin films obtained by conventional radio frequency(RF) plasma enhanced chemical vapor deposition(PECVD) through decomposition of silane diluted with argon were studied by X-ray diffractometry(XRD),Fourier transform infrared(FTIR) spectroscopy,Raman spectroscopy,transmission electron microscopy(TEM),and ultraviolet and visible(UV-vis) spectroscopy,respectively.The influence of argon dilution on the optical properties of the thin films was also studied.It is found that argon as dilution gas plays a significant role in the growth of nano-crystal grains and amorphous network in Si:H thin films.The structural evolution of the thin films with different argon dilution ratios is observed and it is suggested that argon plasma leads to the nanocrystallization in the thin films during the deposition process.The nanocrystallization initiating at a relatively low dilution ratio is also observed.With the increase of argon portion in the mixed precursor gases,nano-crystal grains in the thin films evolve regularly.The structural evolution is explained by a proposed model based on the energy exchange between the argon plasma constituted with Ar* and Ar+ radicals and the growth regions of the thin films.It is observed that both the absorption of UV-vis light and the optical gap decrease with the increase of dilution ratio.
文摘Titanium dioxide is coated on the surface of MCM-41 wafer through the plasma enhanced chemical vapor deposition （PECVD） method using titanium isopropoxide （TTIP） as a precursor. Annealing temperature is a key factor affecting crystal phase of titanium dioxide. It will transform an amorphous structure to a polycrystalline structure by increasing temperature. The optimum anatase phase of TiO2 which can acquire the best methanol conversion under UV-light irradiation is obtained under an annealing temperature of 700℃ for 2 h, substrate tem- perature of 500~C, 70 mL. min1 of oxygen flow rate, and 100W of plasma power. In addition, the films are composed of an anatase-rutile mixed phase, and the ratio of anatase to rutile varies with substrate temperature and oxygen flow rate. The particle sizes of titanium dioxide are between 30.3 nm and 59.9nm by the calculation of Scherrer equation. Under the reaction conditions of ll6.8mg.L-1 methanol, 2.9mg.L-1 moisture, and 75~C of reaction temperature, the best conversion of methanol with UV-light is 48.2% by using the anatase-rutile （91.3/ 8.7） mixed phase TiO2 in a batch reactor for 60 min. While under fluorescent light irradiation, the best photoactivity appears by using the anatase-rutile （55.4/44.6） mixed phase TiO2 with a conversion of 40.0%.
基金Supported by the National Natural Science Foundation of China (Grant No. 50662003)the State Development Program for Basic Research of China (Grant No. G2000028208)
文摘Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.
基金This work was supported by the National Key Basic Research and Development Programme of China （No. G2000028202 and G2000028203） Guangdong Provincial Natural Science Foundation of China （No. 05300378） Programme on Natural Science of Jinan University （No. 51204056）.
文摘Raman spectra and scanning electron microscope （SEM） techniques were used to determine the structural properties of microcrb＇stalline silicon （μc-Si：H） films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer, coming 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Coming 7059 glass, the surfaces of the μc-Si：H films are fairly smooth because of the homogenous growth or h＇ttle lattice mismatch. But for general optical glass, the surface of the μ-Si： H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si：H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material and then the deposition rates, optical and electrical properties are also strongly influenced, hence, deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si：H films with device-grade quality on cheap substrates such as general glass.
基金National Natural Science Foundation of China(No.52161040)Major Science and Technology Research and Development Project of Jiangxi Province(No.20203ABC28W006)+1 种基金Natural Science Foundation of Jiangxi Province,China,(No.20202ACBL214011)Key Project of"Science and Technology to Promote Mongolian Development",China(No.XM2021BT03)。
