High Temperature Characteristics of 3C-SiC/SiHeterojunctionDiodes Grown by LPCVD

The high temperature (300 ～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabr icated by low-pressure chemical vapor deposition on Si (100) substrates are inv estigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage char acteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data meas ured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

In order to investigate their electrical characteristics, high-voltage light-emitting-diodes （HV-LEDs） each contain- ing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors （IFs） of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined, The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of the failure cell is 76.8 Ω, while that of the normal cell is 21.3 Ω. The scanning electron microscope （SEM） image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LEDs needs to be optimized.

The Dynamic Volt-Ampere Characteristics of a Vacuum Arc at Intermediate-Frequency Under a Transverse Magnetic Field

In this study, the changes of a vacuum arc＇s appearance were observed and the volt-ampere characteristics of the vacuum arc at intermediate frequency were analyzed under a transverse magnetic field （TMF）. The TMF and phase shift time were calculated by using the TMF contact model and the large phase shift of the magnetic field at a higher frequency was conductive to the dispersion process of residual plasma. The arc velocity was higher at 800 Hz than at 400 Hz. It can be inferred that TMF will encourage arc movement at 800 Hz. Moreover, the arc movement has an impact on the arc voltage. Because of the increasing length of the arc column with a high arc velocity, the elongated arc causes the arc voltage to increase. Specifically, the volt-ampere characteristics of the vacuum arc are divided into three stages in this paper. The higher the frequency, the greater the initial rate of rise in the arc voltage and the larger the area surrounded by arc volt-ampere characteristics. The correlations between the arc voltage and the amplitude and frequency of the current are also presented.

Temperature-dependent characteristics of 4H-SiC junction barrier Schottky diodes

The current-voltage characteristics of 4H-SiC junction barrier Schottky （JBS） diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.

Luminescence characteristics of Eu^(3+) activated borate phosphor for white light emitting diode

In this paper, the Sr3Y2 （BO3）4 ：Eu^3＋ phosphor was synthesized by high temperature solid-state reaction method and the luminescence characteristics were investigated. The emission spectrum exhibits one strong red emission at 613 nm corresponding to the electric dipole 5^Do-7^F2 transition of Eu^3＋ under 365 nm excitation, this is because Eu^3＋ substituted for Y^3＋ occupied the non-centrosymmetric position in the crystal structure of Sr3Y2（BO3）4. The excitation spectrum indicates that the phosphor can be effectively excited by ultraviolet （254 nm, 365 nm and 400 nm） and blue （470 nm） light. The effect of Eu^3＋ concentration on the red emission of Sr3Y2（BO3）4 ：Eu^3＋ was measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The Commission Internationale del＇Eclairage chromaticity （x, y） of Sr3Y2（BO3）4 ：Eu^3＋ phosphor is （0.640, 0.355） at 15 mol% Eu^3＋.

Effects of Light-Emitting Diode (LED) Red and Blue Light on the Growth and Photosynthetic Characteristics of <i>Momordica charantia</i>L.

With andromonoecious Momordica charantia L. (bitter gourd) as material, three light qualities (50 μmol·m-2·s-1) including white LED light (WL), blue monochromatic light (B, 465 nm), and red monochromatic light (R, 650 nm) were carried out to investigate their effects on seed germination, physiological and biochemical parameters, sex differentiation and photosynthetic characteristics of bitter gourd. The results showed that compared to the WL treatment, the R treatment significantly promoted seed germination, seedling height elongation and soluble sugar content, the B treatment significantly increased seedling stem diameter, reducing sugar content and soluble protein content, the R and B treatments both significantly reduced sucrose content, but their POD activity showed no significant difference. Compared with the R treatment, the B treatment significantly increased the total female flower number and female flower nod ratio in 30 nods of main stems. The study of photosynthetic characteristics found that the R and B treatments could effectively increase the stomatal conductance (GS) of leaves, significantly improved the net photosynthetic rate (Pn) compared to the WL treatment, and the effect of the B treatment was better. Compared to the R and WL treatments, the B treatment increased the maximum photosynthetic rate (Pmax), apparent quantum efficiency (AQE) and light saturation point (LSP), and reduced the dark respiration rate (Rd) and light compensation point (LCP) of the leaves. Fit light response curves showed that the adaptability and utilization of weak light in bitter gourd were middle or below, but it showed higher adaptability and utilization of strong light. Thus, it suggests that Momordica charantia is a typical sun plan with lower Rd. In summary, it is concluded that blue light has a positive effect on the seed germination, seedling growth, sex differentiation and improving the photosynthetic performance, and this will lay the foundation for artificially regulating optimum photosynthesis using specific LEDs wavelength, and help to elucidate the relationship how light quality influences the sex differentiation of plant.

Performance characteristics a nonlinear diode and optimal analysis of refrigerator

This paper establishes a model of a nonlinear diode refrigerator consisting of two diodes switched in the opposite directions and located in two heat reservoirs with different temperatures. Based on the theory of thermal fluctuations, the expressions of the heat flux absorbed from the heat reservoirs are derived. After the heat leak between the two reservoirs is considered, the cooling rate and the coefficient of performance are obtained analytically. The influence of the heat leak and the temperature ratio on the performance characteristics of the refrigerator is analysed in detail.

VOLT-AMPERE CHARACTERISTICS OF CIS-POLY(PHENYL ACETYLENE)

The volt-ampere (Ⅰ-Ⅴ) characteristics of the c/s-poly (phenyl acetylene) (PPA) of cis-transoidal structure has been studied in the temperature range of 253-288K. An ITO/ PPA/ Au sandwich configuration was used for the measurements. Under an applied field of less than 10~5V/ cm it showed ohmic behavior, while the space charge limited current (SCLC) was observed at applied fields above 5×10~5V/ cm. In the ohmic region a conductivity of 1.37×10^(-16)S/ cm was obtained at room temperature with an activation energy of 0.5eV. These data indicate that the conduction is not intrinsic one but is the result of thermal release of trapped carriers. In fact the data in the SCLC region treated according to the theory for a single Gaussian distribution of traps gave a mean trap energy of 0.48 eV with a half-width of 0.4 eV and a total density of trapping states of 5×10^(16)/cm^3.

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes

The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175℃, reduction of the turn-on voltage and increase of the leakage current are observed for both GaN SBDs with TiN and Ni anodes. The performance after thermal treatment shows much better stability for SBDs with Ti N anode, while those with Ni anode change due to more interface states. It is found that the leakage currents of the GaN SBDs with TiN anode are in accord with the thermionic emission model whereas those of the GaN SBDs with Ni anode are much higher than the model. The Silvaco TCAD simulation results show that phonon-assisted tunneling caused by interface states may lead to the instability of electrical properties after thermal treatment, which dominates the leakage currents for GaN SBDs with Ni anode. Compared with GaN SBDs with Ni anode, GaN SBDs with TiN anode are beneficial to the application in microwave power rectification fields due to lower turn-on voltage and better thermal stability.

F4-TCNQ concentration dependence of the current voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si(MPS) Schottky barrier diode

In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

Fabrication of an AlAs/In_(0.53)Ga_ ( 0.47)As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications

A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.

EQR SiPM with P-on-N diode configuration

The silicon photomultiplier(SiPM) with epitaxial quenching resistor(EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a continuous low-resistance cap layer and integrated quenching resisters in epitaxial silicon layer, which makes it possible to increase microcell density or reduce microcell size, thus obtaining large dynamic range and high photon detection efficiency(PDE) simultaneously. Results published show that the EQR SiPM with N-on-P diode configuration had relatively low PDE at peak wavelength of 480 nm as 16%. This paper reported the EQR SiPM with P-on-N diode configuration having active area of 3 × 3 mm^2 and cell density of 10,000/mm^2(total 90,000 pixels). It was characterized with gain of 2E5, dark count rate of 7 MHz, crosstalk of 7%, dynamic range of 85,000 pixels, overall recovery time of 32 ns at room temperature and over-voltage of 3.5 V. The improved PDE at peak wavelength of 420 nm was 30%.

Fabrication and characteristics of nitrogen-doped nanocrystalline diamond/p-type silicon heterojunction

Nitrogen-doped nanocrystalline diamond films(N-NDFs)have been deposited on p-type silicon(Si)by microwave plasma chemical vapor deposition.The reaction gases are methane,hydrogen,and nitrogen without the conventional argon(Ar).The N-NDFs were characterized by X-ray diffraction,Raman spectroscopy,and scanning electron microscopy.The grain sizes are of 8~10 nm in dimension.The N-NDF shows n-type behavior and the corresponding N-NDF/p-Si heterojunction diodes are realized with a high rectification ratio of 102 at^7.8 V,and the current density reaches to1.35 A/cm2 at forward voltage of 8.5 V.The findings suggest that fabricated by CH_4/H_2/N_2 without Ar,the N-NDFs and the related rectifying diodes are favorable for achieving high performance diamond-based optoelectronic devices.

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.

Experimental study on the jet characteristics of a steam plasma torch

Thermal steam plasma jet is promising for applications in environmental industries due to its distinctive characteristics of high enthalpy and high chemical reactivity. However, the performance of the steam plasma torch for its generation is limited by the problems of the large arc voltage fluctuation and serious erosion of the electrodes. In this study, a gas-stabilized steam plasma torch which can operate continuously and stably was designed. Experiments were conducted to reveal the effect of the different working parameters, including the anode diameter, the cooling water temperature, the arc current and the steam flow rate, on its Volt-Ampere characteristics, arc voltage fluctuation, thermal efficiency, jet characteristics and electrodes erosion. Results showed that the use of hot water to cool the electrodes can effectively prevent the condensation of steam on the inner wall of the electrodes, thus significantly reducing the arc voltage fluctuations and electrodes erosion. This is crucial for increasing the working life of the electrodes and ensuring long-term stability of the steam plasma torch. In addition, suitable anode diameter can greatly reduce the arc voltage fluctuation of the steam plasma torch and effectively improve the stability of the steam plasma jet. Furthermore, high arc current can effectively reduce the fluctuations of the arc voltage and increase the length and the volume of the steam plasma jet. Finally, using steam as the plasma forming gas can achieve higher thermal efficiency compared to air. An ideal thermal efficiency can be achieved by properly reducing the arc current and increasing the steam flow rate.

Electrical and Optical Characteristics of Electrodeless Lamp

In order to study the methods to enhance the efficacy of electrodeless lamp,volt-ampere characteristics,illuminance and emission spectrum have been investigated in home-built electrodeless lamp experimental system with an electrodeless lamp in shape like QL 85 lamp.The results show that lamp current increases as lamp voltage increases in non-discharge,the current decreases first and then increases as the voltage increases in discharge.The illuminance of electrodeless lamp increases linearly with discharge power increasing,and it decreases linearly with power decreasing.The emission spectrum is different for different bulb and lighting time.The spectrum of Ar 811.5 nm,76.5 nm,750.4 nm and Hg 313.2 nm decrease with lighting time.While the intensity of Hg 407.8 nm increases with lighting time.

Enhancement of Performance of Organic Light Emitting Diodes by Using Ti- and Mo-Oxide Nano Hybrid Layers

Nanorod-like TiO2 (nc-TiO2) and MoO3 (nc-MoO3) films were thermally grown from Ti- and Mo-metallic wafers. Nanohybrid films of N,N’-diphenyl-N,N’-bis(1-naphthyl)(1,1’-biphenyl)-4,4’diamine (NPB)/TiO2 and NPB/MoO3 used as anode/hole transport layer (HTL) heterojunctions in blue organic light emission diodes (OLEDs) were prepared by coating NPB onto the nc-TiO2 and nc-MoO3 and TiO2. Characterization of the nanostructured hybrid layers showed that both the photoluminescent property and current-voltage (I-V) characteristics of the hybrid materials were significantly enhanced in comparison with the standard NPB polymer. The electroluminous efficiency of the hybrid devices was considerably enhanced in comparison with the standard device. This suggests a useful application for fabricating “reverse” OLEDs, where the emission light goes-out through the semitransparent cathode, instead of the indium tin oxide (ITO) anode. For this, the ohmic contacts of conducting wires to metallic electrodes can be made much better than to ITO anodes.

无刷励磁机旋转整流器二极管开路故障的轴电压特征研究

内转子式三相无刷励磁机旋转整流器二极管单管开路故障发生频率较高且不易直接监测,可能诱发多个二极管故障的连锁效应,严重影响发电机组的安全可靠运行,根据故障在轴电压中形成的特征谐波进行在线监测是一种新型检测方法。首先分析了旋转整流器二极管单管开路故障时励磁机电枢磁动势特征,利用气隙磁导法得到交链电枢转轴交变磁通表达式,进而预测二极管开路故障后,励磁机轴电压中将出现Pωr/2π整数倍频率的谐波。最后以一台5.8 MW的三相无刷励磁机为例进行有限元仿真,结果与理论预期相符,证明了轴电压信号可用于内转子式无刷励磁机的旋转整流桥二极管开路故障在线监测。

电泵浦有机发光二极管衬底侧向辐射研究

有机发光二极管衬底侧向辐射光谱与正向辐射光谱相比,存在明显的窄化现象。研究影响器件侧向辐射光谱窄化的因素,进一步减小辐射光谱的线宽,可为电泵浦有机发光二极管激光辐射研究打下基础。本文研究了随有机发光二极管空穴传输层NPB厚度的变化,器件衬底侧向辐射光谱的半高宽、峰位以及偏振特性的变化情况。比较了有机发光二极管衬底边缘两侧蒸镀银膜与未蒸镀银膜时的衬底侧向辐射光谱。研究发现蒸镀银膜时有机发光二极管的衬底侧向辐射光谱半高宽变窄,并且当空穴传输层NPB的厚度为130 nm时,器件衬底侧向辐射光谱半高宽低至14 nm。说明器件衬底两侧存在银膜作为反射镜的情况下,衬底中侧向传播的光将受到光学谐振腔的作用。本文的研究结果为有机发光二极管辐射光谱的窄化和辐射光放大提供了一种新思路。