Understanding the correlation between energy-state mismatching and open-circuit voltage loss in bulk heterojunction solar cells

Photoinduced intermolecular charge transfer(PICT)determines the voltage loss in bulk heterojunction(BHJ)organic photovoltaics(OPVs),and this voltage loss can be minimized by inducing efficient PICT,which requires energy-state matching between the donor and acceptor at the BHJ interfaces.Thus,both geometrically and energetically accessible delocalized state matching at the hot energy level is crucial for achieving efficient PICT.In this study,an effective method for quantifying the hot state matching of OPVs was developed.The degree of energy-state matching between the electron donor and acceptor at BHJ interfaces was quantified using a mismatching factor(MF)calculated from the modified optical density of the BHJ.Furthermore,the correlation between the open-circuit voltage(Voc)of the OPV device and energy-state matching at the BHJ interface was investigated using the calculated MF.The OPVs with small absolute MF values exhibited high Voc values.This result clearly indicates that the energy-state matching between the donor and acceptor is crucial for achieving a high Voc in OPVs.Because the MF indicates the degree of energy-state matching,which is a critical factor for suppressing energy loss,it can be used to estimate the Voc loss in OPVs.

Analysis of multiple-faults of high-voltage circuit breakers based on non-negative matrix decomposition

High-voltage circuit breakers are the core equipment in power networks,and to a certain extent,are related to the safe and reliable operation of power systems.However,their core components are prone to mechanical faults.This study proposes a component separation method to detect multiple mechanical faults in circuit breakers that can achieve online real-time monitoring.First,a model and strategy are presented for obtaining mechanical voiceprint signals from circuit breakers.Subsequently,the component separation method was used to decompose the voiceprint signals of multiple faults into individual component signals.Based on this,the recognition of the features of a single-fault voiceprint signal can be achieved.Finally,multiple faults in high-voltage circuit breakers were identified through an experimental simulation and verification of the circuit breaker voiceprint signals collected from the substation site.The research results indicate that the proposed method exhibits excellent performance for multiple mechanical faults,such as spring structures and loose internal components of circuit breakers.In addition,it provides a reference method for the real-time online monitoring of high-voltage circuit breakers.

Improvement of circuit oscillation generated by underwater high voltage pulse discharges based on pulse power thyristor

High voltage fracturing technology was widely used in the field of reservoir reconstruction due to its advantages of being clean, pollution-free, and high-efficiency. However, high-frequency circuit oscillation occurs during the underwater high voltage pulse discharge process, which brings security risks to the stability of the pulse fracturing system. In order to solve this problem, an underwater pulse power discharge system was established, the circuit oscillation generation conditions were analyzed and the circuit oscillation suppression method was proposed. Firstly, the system structure was introduced and the charging model of the energy storage capacitor was established by the state space average method. Next, the electrode high-voltage breakdown model was established through COMSOL software, the electrode breakdown process was analyzed according to the electron density distribution image, and the plasma channel impedance was estimated based on the conductivity simulation results. Then the underwater pulse power discharge process and the circuit oscillation generation condition were analyzed, and the circuit oscillation suppression strategy of using the thyristor to replace the gas spark switch was proposed. Finally, laboratory experiments were carried out to verify the precision of the theoretical model and the suppression effect of circuit oscillation. The experimental results show that the voltage variation of the energy storage capacitor, the impedance change of the pulse power discharge process, and the equivalent circuit in each discharge stage were consistent with the theoretical model. The proposed oscillation suppression strategy cannot only prevent the damage caused by circuit oscillation but also reduce the damping oscillation time by77.1%, which can greatly improve the stability of the system. This research has potential application value in the field of underwater pulse power discharge for reservoir reconstruction.

Study on the Mathematical Model of Dielectric Recovery Characteristics in High Voltage SF6 Circuit Breaker

According to the stream theory, this paper proposes a mathematical model of the dielectric recovery characteristic based on the two-temperature ionization equilibrium equation. Taking the dynamic variation of charged particle＇s ionization and attachment into account, this model can be used in collaboration with the Coulomb collision model, which gives the relationship of the heavy particle temperature and electron temperature to calculate the electron density and temperature under different pressure and electric field conditions, so as to deliver the breakdown electric field strength under different pressure conditions. Meanwhile an experiment loop of the circuit breaker has been built to measure the breakdown voltage. It is shown that calculated results are in conformity with experiment results on the whole while results based on the stream criterion are larger than experiment results. This indicates that the mathematical model proposed here is more accurate for calculating the dielectric recovery characteristic, it is derived from the stream model with some improvement and refinement and has great significance for increasing the simulation accuracy of circuit breaker＇s interruption characteristic.

A Comparative Study on Open Circuit Voltage Models for Lithium-ion Batteries

The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little attention has been paid to the accuracy of various open circuit voltage(OCV) models for correcting the SoC with aid of the ampere-hour counting method. This paper presents a comprehensive comparison study on eighteen OCV models which cover the majority of models used in literature. The low-current OCV tests are conducted on the typical commercial LiFePO/graphite(LFP) and LiNiMnCoO/graphite(NMC) cells to obtain the experimental OCV-SoC curves at different ambient temperature and aging stages. With selected OCV and SoC points from experimental OCV-SoC curves, the parameters of each OCV model are determined by curve fitting toolbox of MATLAB 2013. Then the fitting OCV-SoC curves based on diversified OCV models are also obtained. The indicator of root-mean-square error(RMSE) between the experimental data and fitted data is selected to evaluate the adaptabilities of these OCV models for their main features, advantages,and limitations. The sensitivities of OCV models to ambient temperatures, aging stages, numbers of data points,and SoC regions are studied for both NMC and LFP cells. Furthermore, the influences of these models on SoC estimation are discussed. Through a comprehensive comparison and analysis on OCV models, some recommendations in selecting OCV models for both NMC and LFP cells are given.

The Voltage Distribution Characteristics of a Hybrid Circuit Breaker During High Current Interruption

Hybrid circuit breaker （HCB） technology based on a vacuum interrupter and a SF6 interrupter in series has become a new research direction because of the low-carbon requirements for high voltage switches. The vacuum interrupter has an excellent ability to deal with the steep rising part of the transient recovery voltage （TRV）, while the SF6 interrupter can withstand the peak part of the voltage easily. An HCB can take advantage of the interrupters in the current interruption process. In this study, an HCB model based on the vacuum ion diffusion equations, ion density equation, and modified Cassie-Mayr arc equation is explored. A simulation platform is constructed by using a set of software called the alternative transient program （ATP）. An HCB prototype is also designed, and the short circuit current is interrupted by the HCB under different action sequences of contacts. The voltage distribution of the HCB is analyzed through simulations and tests. The results demonstrate that if the vacuum interrupter withstands the initial TRV and interrupts the post-arc current first, then the recovery speed of the dielectric strength of the SF6 interrupter will be fast. The voltage distribution between two interrupters is determined by their post-arc resistance, which happens after current-zero, and subsequently, it is determined by the capacitive impedance after the post-arc current decays to zero.

Influence of dc Component during Inadvertent Operation of the High Voltage Generator Circuit Breaker during Mis-Synchronization

This paper analyses the synchronization problem of a generator onto power system without satisfying synchronization condition. The main focus of the paper is on the impact of the dc component of the current in the high voltage circuit breaker during its close-open operating cycle. Using real time measurements of currents/voltages and angles during the close-opening cycle of high voltage generator circuit breaker and the impact of the dc component of current in context of interrupting large magnitude of current from the circuit breaker. In addition, the paper describes a study case model and the results of simulations performed using the software EMTP-ATP of an actual incident that occurred during the inadvertent synchronization of a large 339 MW, 24 kV generator to the grid.

MISO-Type Voltage-Mode Universal Biquadratic Filter Using Single Universal Voltage Conveyor

A universal biquadratic filter using single universal voltage conveyor (UVC), two resistors and two capacitors is presented in this paper. The proposed structure has three inputs and one output and can realize all the five standard biquadratic filters: low-pass (LP), high-pass (HP), band-pass (BP), band-reject (BR) and all-pass (AP) from the same circuit configuration. The presented universal filter offers low active and passive sensitivities. SPICE (Version 16.5) simulation results using 0.18 μm TSMC technology have been included.

Method of Mechanical Fault Intelligent Diagnosis Based on Vibration Signal of High Voltage Circuit Breaker

Based on vibration signal of high voltage circuit breaker,a new method of intelligent fault diagnosis that wavelet packet extracts energy entropy which are used as characteristic vector of the support vector machine(SVM)to construct classifier for fault diagnosis is presented.The acceleration sensors are applied to collecting the vibration data of different states of high voltage circuit breakers based on self-made experimental platform in this method.The wavelet packet are fully applied to analyze the vibration signal and decompose vibration signal into three layers,and wavelet packet energy entropy of each frequency band are as the characteristic vector of circuit breaker failure mode.Then the intelligent diagnosis network is established on the basis of the support vector machine theory.It is verified that the method has a better capability of classification and a higher accuracy compared with the traditional neural network diagnosis method through distinguishing the three fault modes which are tripping device stuck,the vacuum arcing chamber fixed bolt looseness and too much friction force of the transmission mechanism of circuit breaker in this paper.

Effect of Valence Band Tail Width on the Open Circuit Voltage of P3HT:PCBM Bulk Heterojunction Solar Cell:AMPS-1D Simulation Study

The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.

CMOS VDIBAs-Based Single-Resistance-Controlled Voltage-Mode Sinusoidal Oscillator

In this communication, a new single-resistance controlled sinusoidal oscillator (SRCO) has been presented. The presented SRCO uses two voltage differencing inverting buffered amplifiers (VDIBAs), one resistor and two capacitors in which one is grounded (GC) and the other one is floating (FC). The proposed structure offers the following advantageous features: 1) independent control of oscillation condition (OC) and oscillation frequency (OF);2) low passive and active sensitivities and 3) very good frequency stability. The non-ideal effects of the VDIBA on the proposed oscillator have also been investigated. The proposed SRCO has been tested for its robustness using Monte-Carlo simulations. The check of the validity of the presented SRCO has been established by SPICE simulations using 0.18 μm TSMC technology.

A New Voltage-Mode Universal Biquadratic Filter Using Single UVC

The paper presents a new universal biquadratic filter using single universal voltage conveyor (UVC), two resistors and two capacitors. The offered structure has three inputs and one output and can realise all the five basic biquadratic filters: high-pass (HP), low-pass (LP), band-reject (BR), band-pass (BP) and all-pass (AP) from the same circuit topology. The proposed universal filter also provides following advantageous features, not available simultaneously in any UVC based universal biquadratic filter so far: (i) low active and passive sensitivities, (ii) independent control of natural frequency (ω0) and bandwidth (BW) and (iii) no requirement of any component matching condition and inversion of input signal(s) (as needed in most of the earlier reported structures). The workability of proposed structure has been presented by SPICE (Version 16.5) simulation using 0.18 μm TSMC technology.

Dual DVCC Based Voltage-Mode Digitally Programmable Biquadratic Filter

The recent advances in IC technology have led to the trend of designing hybrid systems to benefit both analog and the digital domain. Among analog circuits, multifunctional filter along with multiphase oscillator constitutes a building block of critical importance. In this paper, a digitally reconfigurable multi-input-multi-output voltage mode multifunctional biquadratic filter has been presented. The circuit comprises of two differential voltage current conveyors (DVCCs), two grounded capacitors and two floating resistors. The digital controllability is incorporated using a current-summing network (CSN). Tunability of quality factor is achieved by the use of a 3-bit digital control word while keeping the resonant frequency constant. PSPICE simulations using TSMC 0.25 μm CMOS technology have been performed to validate the theoretically predicted results.

Particle Swarm Optimization-Support Vector Machine Model for Machinery Fault Diagnoses in High-Voltage Circuit Breakers

According to statistic data,machinery faults contribute to largest proportion of High-voltage circuit breaker failures,and traditional maintenance methods exist some disadvantages for that issue.Therefore,based on the wavelet packet decomposition approach and support vector machines,a new diagnosis model is proposed for such fault diagnoses in this study.The vibration eigenvalue extraction is analyzed through wavelet packet decomposition,and a four-layer support vector machine is constituted as a fault classifier.The Gaussian radial basis function is employed as the kernel function for the classifier.The penalty parameter c and kernel parameterδof the support vector machine are vital for the diagnostic accuracy,and these parameters must be carefully predetermined.Thus,a particle swarm optimizationsupport vector machine model is developed in which the optimal parameters c andδfor the support vector machine in each layer are determined by the particle swarm algorithm.The validity of this fault diagnosis model is determined with a real dataset from the operation experiment.Moreover,comparative investigations of fault diagnosis experiments with a normal support vector machine and a particle swarm optimization back-propagation neural network are also implemented.The results indicate that the proposed fault diagnosis model yields better accuracy and e-ciency than these other models.

Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

New Breakdown Electric Field Calculation for SF6 High Voltage Circuit Breaker Applications

The critical electric fields of hot SF6 are calculated including both electron and ion kinetics in wide ranges of temperature and pressure, namely from 300 K up to 4000 K and 2 atmospheres up to 32 atmospheres respectively. Based on solving a multi-term electron Boltz- mann equation the calculations use improved electron-gas collision cross sections for twelve SF6 dissociation products with a particular emphasis on the electron-vibrating molecule interactions. The ion kinetics is also considered and its role on the critical field becomes non negligible as the temperature is above 2000 K. These critical fields are then used in hydrodynamics simulations which correctly predict the circuit breaker behaviours observed in the case of breaking tests.

Study on the instantaneous protection reliability of low voltage circuit breakers

This paper outlines the significance of enhancing the instantaneous protection reliability of low voltage circuit breakers and describes their main failure modes. The instantaneous failure mechanism of low voltage circuit breakers was analyzed so that measures to improve instantaneous protection reliability can be determined. Furthermore, the theory of the instantaneous characteristics calibration device for low voltage circuit breakers and the method of eliminating the non-periodic component of test current are given in detail. Finally, the test results are presented.

An analytical model to explore open-circuit voltage of a-Si:H/c-Si heterojunction solar cells

The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).

A new multilevel voltage source inverter configuration with minimum number of circuit elements

An advanced configuration for multilevel voltage source converters is proposed. The proposed converter is able to apply asymmetrical DC sources. The configuration of the proposed inverter is well designed in order to provide the maximum number of voltage levels in output terminals using lower number of circuit devices. The authority of the proposed inverter versus the conventional H-bridge cascaded inverter and the most recently introduced ones, is verified with a provided comparison study. The proposed inverter is able to generate the desired voltage levels using a lower number of circuit devices including power semi-conductor switches, IGBTs, diodes, related gate driver circuits of switches and DC voltage sources. As a result, the total cost and installation area are considerably reduced and the control scheme gets simpler. To confirm the feasibility of the proposed multilevel structure, both the simulation and experimental results are provided and compared which shows good agreements.

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.