Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:polycrystalline,monocrystalline,amorphous metal–semiconductor contact surface is investigated,considering a Schottky diode(SD)as a parallel connection of numerous subdiodes.It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters.

Properties of intermediate-frequency vacuum arc in sinusoidal curved contact and butt contact

In this report,two new contact structures of a vacuum interrupter with a sinusoidal curved surface are proposed to improve the capability by increasing the surface area.The experimental investigation of vacuum arc at intermediate frequency(360-800 Hz)was conducted and the results were compared with a butt contact with the same contact diameter(41 mm)and the same material.By analyzing the arc behavior,arc voltage characteristics,arc energy,current interrupting capacity,ablation of the anode contact and condensation of the arc products at a 3 mm gap,the differences in their vacuum arc characteristics were determined.The correlations of their arc energy with the amplitude and the frequency of the current were also achieved.Analysis suggests that the ruled curved contact has strong application potentiality because of its low arc energy,low arc voltage noise and arc voltage peak,light ablation on the surface of the anode contact and high interrupting capacity.

Energy gap suppression and excess current in Tl_2Ba_2CaCu_2O_8 intrinsic Josephson junctions

Intrinsic Josephson junctions in misaligned Tl2Ba2CaCu2O8 thin film were fabricated on LaAlO3 substrate. The temperature dependence of the critical current is investigated around liquid nitrogen temperature. In the current voltage characteristic, large voltage jump and lack of resistive branch are observed, which shows good consistency with the intrinsic Josephson junctions. By analyzing the large gap voltage in the curve, great suppression of the energy gap is found. Through discussing the temperature dependence of the gap voltage in liquid nitrogen temperature, it is shown that this phenomenon can be caused by the non-equilibrium quasiparticle injection. The temperature influence on the excess current also confirms the non-equilibrium effect.

Experimental Study of Electrodes Parameters Effects on Small Diffusion Combustion Flame

To study the configuration and conductivity effects on micro-scale methane-air flames by electric field and iron wind,different electric field forces and iron winds are generated by needle,circle and plate electrodes respectively in different electrodes heights under both AC and DC fields though experiments. Experimental results showed that the flame characteristics are affected by needle electrodes mainly through the action of ion wind,by plate type electrodes mainly through the action of electric field force and by annular electrodes through both the electric field force and ion wind at the same time. Under DC field 's effects of all electrodes types,the flame will consequently go down while the voltage reached to a limit value,and it will breakdown under the strong effect of the ion wind by needle electrodes. The results also showed the influence by different electrodes types to the current characteristics,resistance properties and configuration of themicro-scale flames.

How to build good inverters from nanomaterial-based transistors

As promising components of future integrated circuits(ICs),field-effect transistors(FETs)based on semiconducting nanomaterials are being extensively investigated.As the most essential component of ICs,inverters are favored to be demonstrated at the infant stage of emerging technologies.However,systematic research is absent to reveal how the parameters of transistors affect the performance of inverters,e.g.the voltage transfer characteristics(VTCs).In this work,systematic analysis about the dependency between transistor-and inverter-level metrics have been carried out for both complementary metal-oxide-semiconductor(CMOS)and monotype(p-type-only and n-type-only)technologies,which is further experimentally demonstrated by carbon nanotube FETs and ICs.We also propose guidelines towards the high noise margin and rail-to-rail inverter design based on nanomaterials.