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A Novel Time Domain Noise Model for Voltage Controlled Oscillators
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作者 Li Ke Peter Wilson Reuben Wilcock 《Circuits and Systems》 2013年第1期97-105,共9页
This paper describes a novel time domain noise model for voltage controlled oscillators that accurately and efficiently predicts both tuning behavior and phase noise performance. The proposed method is based on device... This paper describes a novel time domain noise model for voltage controlled oscillators that accurately and efficiently predicts both tuning behavior and phase noise performance. The proposed method is based on device level flicker and thermal noise models that have been developed in Simulink and although the case study is a multiple feedback four delay cell architecture it could easily be extended to any similar topology. The strength of the approach is verified through comparison with post layout simulation results from a commercial simulator and measured results from a 120 nm fabricated prototype chip. Furthermore, the effect of control voltage flicker noise on oscillator output phase noise is also investigated as an example application of the model. Transient simulation based noise analysis has the strong advantage that noise performance of higher level systems such as phase locked loops can be easily determined over a realistic acquisition and locking process yielding more accurate and reliable results. 展开更多
关键词 voltage controlLED oscillators Noise MODEL SIMULATION
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Noise-Induced Transition in a Voltage-Controlled Oscillator Neuron Model
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作者 XIE Hui-Zhang LIU Xue-Mei +2 位作者 AI Bao-Quan LIU Liang-Gang LI Zhi-Bing 《Communications in Theoretical Physics》 SCIE CAS CSCD 2008年第7期257-260,共4页
In the presence of Gaussian white noise,we study the properties of voltage-controlled oscillator neuronmodel and discuss the effects of the additive and multiplicative noise.It is found that the additive noise can acc... In the presence of Gaussian white noise,we study the properties of voltage-controlled oscillator neuronmodel and discuss the effects of the additive and multiplicative noise.It is found that the additive noise can accelerate andcounterwork the firing of neuron,which depends on the value of central frequency of neuron itself,while multiplicativenoise can induce the continuous change or mutation of membrane potential. 展开更多
关键词 高斯白噪音 信号转换 电压 振荡器
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LC型VCO高温特性分析
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作者 刘长江 刘银生 高晓强 《电子工艺技术》 2024年第1期10-13,共4页
微波单片集成电路(MMIC)具有噪声性能好、集成度高、驱动能力强的优点。在MMIC工艺下,对压控振荡器(VCO)在高温下的特性表现进行了分析。现有使用负阻振荡原理设计的VCO电路分为负阻电路部分和谐振电路部分,该结构在高温下常产生近端噪... 微波单片集成电路(MMIC)具有噪声性能好、集成度高、驱动能力强的优点。在MMIC工艺下,对压控振荡器(VCO)在高温下的特性表现进行了分析。现有使用负阻振荡原理设计的VCO电路分为负阻电路部分和谐振电路部分,该结构在高温下常产生近端噪声恶化和频率下降的现象,影响VCO的正常工作性能。通过对现有MMICVCO产品的仿真测试和分析,探得了高温下VCO性能改变的原因。 展开更多
关键词 MMIC 压控振荡器 高温特性改变
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基于变压器磁调谐的双模W波段VCO
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作者 朱承同 徐雷钧 +1 位作者 谢月娥 陈元平 《半导体技术》 北大核心 2024年第2期164-170,共7页
提出了一种基于变压器的用于无变容管W波段压控振荡器(VCO)的磁调谐技术。通过控制变压器磁调谐线圈所连接MOS管的开关状态,引入了四个重叠的频率子带。所提出的可切换的六线圈变压器采用40 nm CMOS工艺的顶层厚金属设计,实现了较高的... 提出了一种基于变压器的用于无变容管W波段压控振荡器(VCO)的磁调谐技术。通过控制变压器磁调谐线圈所连接MOS管的开关状态,引入了四个重叠的频率子带。所提出的可切换的六线圈变压器采用40 nm CMOS工艺的顶层厚金属设计,实现了较高的输出频率稳定性和谐振腔品质因数。所采用的技术在对相位噪声的不利影响最小的情况下扩展了调谐范围,实现了无变容管W波段VCO的宽调谐范围和低功耗。所设计的双模W波段VCO输出频率为84.2~107.5 GHz,频率调谐范围大于24%,在1 V电源电压下功耗仅6.1 mW,在10 MHz偏移处的相位噪声为-107.203~-97.875 dBc/Hz。 展开更多
关键词 变压器 磁调谐 无变容管 W波段 压控振荡器(vco)
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A Configuration for Realizing Voltage Controlled Floating Inductance and Its Application 被引量:1
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作者 Praween K. Sinha Dr Neelam Sharma Rohit Mishra 《Circuits and Systems》 2015年第9期189-199,共11页
A configuration using current feedback amplifiers AD844 and multiplier AD534 has been presented, which is capable of realizing Voltage Controlled Floating Inductance (proportional and in-verse proportional). The appli... A configuration using current feedback amplifiers AD844 and multiplier AD534 has been presented, which is capable of realizing Voltage Controlled Floating Inductance (proportional and in-verse proportional). The application of band pass filter in Figure 4(a), notch filter in Figure 5(a) and Hartley oscillator in Figure 6(a) and simulation result in Figures 4(b)-(d), Figures 5(b)-(d), Figures 6(b)-(d) shows the workability of proposed configuration. 展开更多
关键词 INDUCTANCE Simulation voltage-controlled IMPEDANCES MULTIPLIER Filter oscillator Current Feedback Operational AMPLIFIER
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Dual-Delay-Path Ring Oscillator with Self-Biased Delay Cells for Clock Generation
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作者 Agord de Matos Pinto Jr Raphael Ronald Noal Souza +2 位作者 Mateus Biancarde Castro Eduardo Rodrigues de Lima Leandro Tiago Manêra 《Circuits and Systems》 2023年第6期19-28,共10页
This work summarizes the structure and operating features of a high-performance 3-stage dual-delay-path (DDP) voltage-controlled ring oscillator (VCRO) with self-biased delay cells for Phase-Locked Loop (PLL) structur... This work summarizes the structure and operating features of a high-performance 3-stage dual-delay-path (DDP) voltage-controlled ring oscillator (VCRO) with self-biased delay cells for Phase-Locked Loop (PLL) structurebased clock generation and digital system driving. For a voltage supply V<sub>DD</sub> = 1.8 V, the resulting set of performance parameters include power consumption P<sub><sub></sub>DC</sub> = 4.68 mW and phase noise PN@1MHz = -107.8 dBc/Hz. From the trade-off involving P<sub>DC</sub> and PN, a system level high performance is obtained considering a reference figure-of-merit ( FoM = -224 dBc/Hz ). Implemented at schematic level by applying CMOS-based technology (UMC L180), the proposed VCRO was designed at Cadence environment and optimized at MunEDA WiCkeD tool. 展开更多
关键词 Phase Locked Loop (PLL) voltage-controlled Ring oscillators (VCRO) Dual-Delay-Path DDP Delay Cells
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CMOS Phase and Quadrature Pulsed Differential Oscillators Coupled through Microstrip Delay-Lines
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作者 Francesco Stilgenbauer Stefano Perticaroli Fabrizio Palma 《Circuits and Systems》 2014年第8期181-190,共10页
An innovative solution to design phase and quadrature pulsed coupled oscillators systems through electromagnetic waveguides is described in this paper. Each oscillator is constituted by an LC differential resonator re... An innovative solution to design phase and quadrature pulsed coupled oscillators systems through electromagnetic waveguides is described in this paper. Each oscillator is constituted by an LC differential resonator refilled through a couple of current pulse generator circuits. The phase and quadrature coupling between the two differential oscillators is achieved using delayed replicas of generated fundamentals from a resonator as driving signal of pulse generator injecting in the other resonator. The delayed replicas are obtained by microstrip-based delay-lines. A 2.4 - 2.5 GHz VCO has been implemented in a 150 nm RF CMOS process. Simulations showed at 1 MHz offset a phase noise of -139.9 dBc/Hz and a FOM of -189.1 dB. 展开更多
关键词 voltage controlled oscillator MICROSTRIP Delay-Line PHASE and QUADRATURE PHASE Noise
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基于改进开关可调电容的宽调谐太赫兹频率源设计
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作者 徐雷钧 芦哲涵 +1 位作者 白雪 陈建锋 《固体电子学研究与进展》 CAS 2024年第2期119-124,共6页
针对太赫兹频率源调谐范围窄的问题,基于普通PMOS可变电容设计了一种改进的开关可调电容,实现了电容变化的单调性,并基于该电容结合衬底调谐方式设计了一种宽调谐范围、高输出功率的压控振荡器(Voltage-controlled oscillator, VCO)。... 针对太赫兹频率源调谐范围窄的问题,基于普通PMOS可变电容设计了一种改进的开关可调电容,实现了电容变化的单调性,并基于该电容结合衬底调谐方式设计了一种宽调谐范围、高输出功率的压控振荡器(Voltage-controlled oscillator, VCO)。将设计的VCO结合二倍频器实现了一种工作在太赫兹频段的,具有较宽调谐范围及较高输出功率的太赫兹频率源。使用40 nm CMOS工艺设计的太赫兹频率源输出频率为146.3~168.5 GHz,调谐范围14.1%,并同时具有最高1.3 dBm的输出功率,其在10 MHz频偏处的相位噪声最优为-105.52 dBc/Hz。 展开更多
关键词 太赫兹 压控振荡器 倍频器 开关电容 衬底调谐
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一种宽带低功耗的VCO设计
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作者 沈最 《通信电源技术》 2023年第8期67-69,73,共4页
以40 nm互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺为基础,设计可变电容接入电路的方式,该电路由一组固定的可变大电容与3位开关控制的可变小电容阵列组成,能很好地抑制调谐增益的变化,并且在可变电容两... 以40 nm互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺为基础,设计可变电容接入电路的方式,该电路由一组固定的可变大电容与3位开关控制的可变小电容阵列组成,能很好地抑制调谐增益的变化,并且在可变电容两端加入偏置,让其工作在容值变化较为合适的区间,使控制电压对调谐范围的利用率达到最优。测试结果表明,在电源电压为1.1 V的条件下,该压控振荡器的设计功耗为1.155 mW,版图面积仅为0.089 mm2。频率的调谐范围是4.08~5.62 GHz,中心频率在4.8 GHz时的相位噪声为-116.46 dBc/Hz@1 MHz,考虑调谐范围的性能系数(Figure of Merit,FOM)值为-200.03 dBc/Hz,具有良好的综合性能。 展开更多
关键词 压控振荡器 可变电容 低功耗 宽调谐范围
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High performance of low voltage controlled ring oscillator with reverse body bias technology
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作者 Akansha SHRIVASTAVA Anshul SAXENA Shyam AKASHE 《Frontiers of Optoelectronics》 CSCD 2013年第3期338-345,共8页
In complementary metal oxide semiconductor (CMOS) nanoscalc technology, power dissipation is becoming important metric. In this work low leakage voltage controlled ring oscillator circuit system was proposed for cri... In complementary metal oxide semiconductor (CMOS) nanoscalc technology, power dissipation is becoming important metric. In this work low leakage voltage controlled ring oscillator circuit system was proposed for critical communication systems with high oscillation frequency. An ideal approach has been presented with substrate biasing technique for reduction of power consumption. The simulation have been completed using cadence virtuoso 45 nm standard CMOS technology at room temperature 27~C with supply voltage Vc^d = 0.7 V. The simulation results suggest that voltage controlled ring oscillator has characterized with efficient low power voltage controlled oscillator (VCO) in term of minimum leakage power (1.23 nW) and maximum oscilla- tion frequency (4.76 GHz) with joint positive channel metal oxide semiconductor and negative channel metal oxide semiconductor (PMOS and NMOS) reverse sub- strate bias technique. PMOS, NMOS and joint reverse body bias techniques have been compared in the presented work. 展开更多
关键词 voltage controlled oscillator (vco leakagepower active power oscillation frequency efficiency cadence tool
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An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
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作者 Li-heng LOU Ling-ling SUN +1 位作者 Jun LIU Hai-jun GAO 《Journal of Zhejiang University-Science C(Computers and Electronics)》 SCIE EI 2013年第3期205-213,共9页
This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP ch... This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity.The simulation convergence is greatly improved by this method.An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement.The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting.The model is verified with an LC VCO design,and exhibits excellent convergence during simulation.The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy,respectively,indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency(RF) circuit design. 展开更多
关键词 Layout optimizing Modeling PSP Charge model Cross-coupled Metal-oxide-semiconductor(MOS) voltage controlled oscillator(vco)
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基于负阻MMIC的新型VCO研制 被引量:9
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作者 郭文胜 陈君涛 邓海丽 《半导体技术》 CAS CSCD 北大核心 2012年第12期909-912,933,共5页
提出了一种基于负阻单片微波集成电路的新型压控振荡器(VCO)的设计方法,即负阻电路采用GaAs HBT工艺设计流片,调谐选频电路采用薄膜混合集成工艺制作。利用微封装技术将二者结合构成完整的VCO。这种新型VCO既具有单片微波集成电路的小... 提出了一种基于负阻单片微波集成电路的新型压控振荡器(VCO)的设计方法,即负阻电路采用GaAs HBT工艺设计流片,调谐选频电路采用薄膜混合集成工艺制作。利用微封装技术将二者结合构成完整的VCO。这种新型VCO既具有单片微波集成电路的小型化、低成本的优势,又保持了薄膜混合集成电路可灵活调试的特性。通过设计流片数款在不同频段的负阻单片微波集成电路,可完成频率1~18 GHz、小型化、系列化VCO的研制。X波段宽带VCO的实测结果显示,当电调电压在2~13 V变化时输出频率覆盖8~12.5 GHz,调谐线性度为2∶1,电调电压5 V时相位噪声为-96 dBc/Hz@100 kHz。 展开更多
关键词 负阻单片微波集成电路(MMIC) 压控振荡器 砷化镓异质结三极管 相位噪声 小型化
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A micromechanical bridge-shaped voltage-controlled oscillator
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作者 HAN Jianqiang ZHU Changchun ZHAO Hongpo LIU Junhua SHAO Jun 《Science China(Technological Sciences)》 SCIE EI CAS 2004年第1期26-32,共7页
A novel micromechanical bridge-shaped voltage-controlled oscillator with high Q value was fabricated. The core of this kind of oscillators is an electrothermally excited and piezoresistively detected micromechanical b... A novel micromechanical bridge-shaped voltage-controlled oscillator with high Q value was fabricated. The core of this kind of oscillators is an electrothermally excited and piezoresistively detected micromechanical bridge resonator. Its resonance frequency can be adjusted by changing the DC voltage applied to the Wheatstone bridge. Theoretical analysis and experimental data show that its resonance frequency is linear with the square of the DC voltage. The linearity is better than 0.16% and the adjustable frequency range excels 17.15%. 展开更多
关键词 voltage-controlled oscillator microbridge resonator MEMS.
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宽带HBT VCO单片电路的设计和制作 被引量:1
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作者 陈凤霞 蔡文胜 +1 位作者 戚伟 李远鹏 《半导体技术》 CAS CSCD 北大核心 2010年第1期8-13,共6页
针对传统采用的VCO设计理论,分析了VCO的基本结构及其工作原理,分析了负阻法和反馈法的优缺点,采用虚地法对VCO电路进行了分析和设计,从而简化了VCO的设计。同时利用EDA工具对微波宽带VCO单片电路进行优化和仿真,采用多种方法提高芯片... 针对传统采用的VCO设计理论,分析了VCO的基本结构及其工作原理,分析了负阻法和反馈法的优缺点,采用虚地法对VCO电路进行了分析和设计,从而简化了VCO的设计。同时利用EDA工具对微波宽带VCO单片电路进行优化和仿真,采用多种方法提高芯片性能。基于HBT工艺,设计出了宽带、低相位噪声的VCO单片电路,芯片工作电压为5V,工作电流为50~58mA,VCO振荡频率为3.2~6.2GHz,相噪为-73dBc/Hz@10kHz,输出功率11~14dBm。同时还阐述了采用片上外加变容管的优缺点以及改进方法。 展开更多
关键词 压控振荡器 频率 虚地 负阻 异质结双极晶体管
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一种低功耗宽频率调谐范围的伪差分环形VCO 被引量:4
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作者 卓汇涵 张万荣 +1 位作者 靳佳伟 周永旺 《半导体技术》 CAS CSCD 北大核心 2015年第5期343-347,共5页
设计了一种低功耗、宽频率调谐范围的伪差分环形压控振荡器(VCO)。电路设计分为振荡环路设计和电流源设计两部分。在振荡器的振荡环路部分,提出了一种新颖的降低功耗的方法,即通过动态地调节接入振荡环路的锁存器,减小驱动电流,降低功... 设计了一种低功耗、宽频率调谐范围的伪差分环形压控振荡器(VCO)。电路设计分为振荡环路设计和电流源设计两部分。在振荡器的振荡环路部分,提出了一种新颖的降低功耗的方法,即通过动态地调节接入振荡环路的锁存器,减小驱动电流,降低功耗;在振荡器的控制电源部分,采用gain-boost结构,设计了一款理想的可控双电流源,实现了振荡器的宽频率调谐范围。基于SMIC 65 nm工艺,在1.8 V工作电压下,对振荡器进行了后仿验证。结果表明,在频率为900 MHz时,振荡器的功耗仅为3.564 m W;当控制电压在0.6~1.8 V变化时,振荡器的频率调谐范围可宽达0.495~1.499 GHz。 展开更多
关键词 低功耗 动态锁存 调谐范围 理想电流源 压控振荡器(vco)
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一种新型电容阵列结构线性宽带VCO 被引量:1
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作者 徐雷钧 王超然 白雪 《微电子学》 CAS CSCD 北大核心 2016年第6期781-787,共7页
针对开关电容阵列结构压控振荡器(VCO)的非线性粗调谐特性,提出了一种新型的电容阵列结构线性宽带VCO。该VCO只有1组MOS电容、4路数字控制信号控制电阻阵列和电流源阵列,得到1组偏置直流电压以进行粗调谐;1路模拟控制电压通过电流叠加... 针对开关电容阵列结构压控振荡器(VCO)的非线性粗调谐特性,提出了一种新型的电容阵列结构线性宽带VCO。该VCO只有1组MOS电容、4路数字控制信号控制电阻阵列和电流源阵列,得到1组偏置直流电压以进行粗调谐;1路模拟控制电压通过电流叠加的方式叠加在MOS电容的控制电压上,进行精细调谐。电阻阵列控制不同数字控制信号下的调谐增益KVCO,与电流源阵列共同产生直流偏置电压以控制步进频率,可以灵活地精确设置不同数字信号控制下的电容值大小,取得线性的粗调谐特性。仿真结果显示,该VCO的调谐范围为5.00~5.87GHz,步进频率为166 MHz,调谐增益KVCO变化范围为-900^-450MHz/V,不同数字控制信号下的调谐特性几乎相同,比传统二进制电容阵列拥有更好的粗调谐特性。1.8V供电电压下,电路最大消耗4.43mA直流电流。 展开更多
关键词 压控振荡器 宽带 线性化 电容阵列
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一种采用交错耦合VCO和高速前置分频器的频率合成器 被引量:4
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作者 陈钰 洪志良 傅志军 《微电子学》 CAS CSCD 北大核心 2001年第3期212-215,共4页
文章提出了一种采用延迟单元交错耦合压控振荡器 (VCO)和高速双系数前置分频器的锁相环 (PLL)频率合成器设计方法。采用 0 .2 5μm的 CMOS工艺模型 ,在 Cadence环境下模拟 ,在相同级数情况下 ,设计获得的 VCO比传统顺序连接的 VCO速度快... 文章提出了一种采用延迟单元交错耦合压控振荡器 (VCO)和高速双系数前置分频器的锁相环 (PLL)频率合成器设计方法。采用 0 .2 5μm的 CMOS工艺模型 ,在 Cadence环境下模拟 ,在相同级数情况下 ,设计获得的 VCO比传统顺序连接的 VCO速度快 1 .4倍 ;运用动态 D触发器实现的双系数前置分频器 ,最高速度可达 2 GHz。该锁相环频率合成器在 40 0 MHz~ 1 .1 GHz的宽频范围内都能保持良好的相位跟踪特性 ,温度系数为 886ppm/°C,电源反射比为 3.3% 展开更多
关键词 频率合成器 压控振荡器 前置分频器 交错耦合
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毫米波VCO电调特性的线性校正方案研究 被引量:12
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作者 沈涛 孙忠良 《现代雷达》 CSCD 北大核心 1997年第1期91-100,共10页
毫米波VCO是毫米波应用系统的关键部件之一,FMCW雷达的距离分辨率正比于VCO电调线性度。本文给出了毫米波VCO电调线性度的三种定义,系统地讨论了毫米波VCO电调特性的电抗补偿线性校正、开环线性校正及闭环线性校正方案。
关键词 毫米波电路 压控振荡器 电调线性度
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MC1648两种基本型VCO的压控特性和频稳性研究 被引量:2
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作者 林秩盛 陈振晖 林宇 《电讯技术》 北大核心 2001年第1期55-58,共4页
本文对集成锁相环中常用的 2种基本型MC1648负阻集成VCO的压控特性和频稳性进行分析并给出实际测量结果。结果表明 ,压控特性在较宽范围内具有较好的线性 ;频稳度均优于 2×10 -4 量级 ,已达到甚至优于一般频率固定的LC振荡器。
关键词 压控振荡器 负阻集成 压控特性 频率稳定性 集成锁相环
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Voltage assisted control of spin-transfer nano-oscillators
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作者 Bahniman Ghosh Gaurav Solanki 《Journal of Semiconductors》 EI CAS CSCD 2015年第3期65-68,共4页
The spin-transfer nano-oscillator (STNO) has recently acquired a huge amount of research interest, due to its promising easy tunability along with the miniature size. The output frequency control of an STNO through ... The spin-transfer nano-oscillator (STNO) has recently acquired a huge amount of research interest, due to its promising easy tunability along with the miniature size. The output frequency control of an STNO through magnetic field and current has been examined almost to its full extent; however, there are issues that still need to be addressed. Here, we propose a novel way of voltage control of the output frequency of an STNO, and alongside reducing its power requirement. 展开更多
关键词 spin-transfer nano-oscillator voltage controlled magnetic anisotropy tunnelling magnetoresistance
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