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A Novel Time Domain Noise Model for Voltage Controlled Oscillators
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作者 Li Ke Peter Wilson Reuben Wilcock 《Circuits and Systems》 2013年第1期97-105,共9页
This paper describes a novel time domain noise model for voltage controlled oscillators that accurately and efficiently predicts both tuning behavior and phase noise performance. The proposed method is based on device... This paper describes a novel time domain noise model for voltage controlled oscillators that accurately and efficiently predicts both tuning behavior and phase noise performance. The proposed method is based on device level flicker and thermal noise models that have been developed in Simulink and although the case study is a multiple feedback four delay cell architecture it could easily be extended to any similar topology. The strength of the approach is verified through comparison with post layout simulation results from a commercial simulator and measured results from a 120 nm fabricated prototype chip. Furthermore, the effect of control voltage flicker noise on oscillator output phase noise is also investigated as an example application of the model. Transient simulation based noise analysis has the strong advantage that noise performance of higher level systems such as phase locked loops can be easily determined over a realistic acquisition and locking process yielding more accurate and reliable results. 展开更多
关键词 voltage controlled oscillators Noise MODEL SIMULATION
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A Configuration for Realizing Voltage Controlled Floating Inductance and Its Application 被引量:1
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作者 Praween K. Sinha Dr Neelam Sharma Rohit Mishra 《Circuits and Systems》 2015年第9期189-199,共11页
A configuration using current feedback amplifiers AD844 and multiplier AD534 has been presented, which is capable of realizing Voltage Controlled Floating Inductance (proportional and in-verse proportional). The appli... A configuration using current feedback amplifiers AD844 and multiplier AD534 has been presented, which is capable of realizing Voltage Controlled Floating Inductance (proportional and in-verse proportional). The application of band pass filter in Figure 4(a), notch filter in Figure 5(a) and Hartley oscillator in Figure 6(a) and simulation result in Figures 4(b)-(d), Figures 5(b)-(d), Figures 6(b)-(d) shows the workability of proposed configuration. 展开更多
关键词 INDUCTANCE Simulation voltage-controlled IMPEDANCES MULTIPLIER Filter oscillator Current Feedback Operational AMPLIFIER
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A Low Jitter Design of Ring Oscillators in 1.25GHz Serdes 被引量:1
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作者 肖磊 刘玮 杨莲兴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第3期490-496,共7页
A new configuration for delay cells used in voltage controlled oscillators is presented. A jitter comparison between the source-coupled differential delay cell and the proposed CMOS inverter based delay cell is given.... A new configuration for delay cells used in voltage controlled oscillators is presented. A jitter comparison between the source-coupled differential delay cell and the proposed CMOS inverter based delay cell is given. A new method to optimize loop parameters based on low-jitter in PLL is also introduced. A low-jitter 1.25GHz Serdes is implemented in a 0.35μm standard 2P3M CMOS process. The result shows that the RJ (random jitter) RMS of 1.25GHz data rate series output is 2. 3ps (0. 0015UI) and RJ (1 sigma) is 0. 0035UI. A phase noise measurement shows - 120dBc/Hz@100kHz at 1111100000 clock-pattern data out. 展开更多
关键词 SERDES voltage controlled ring oscillator low jitter
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LC型VCO高温特性分析 被引量:1
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作者 刘长江 刘银生 高晓强 《电子工艺技术》 2024年第1期10-13,共4页
微波单片集成电路(MMIC)具有噪声性能好、集成度高、驱动能力强的优点。在MMIC工艺下,对压控振荡器(VCO)在高温下的特性表现进行了分析。现有使用负阻振荡原理设计的VCO电路分为负阻电路部分和谐振电路部分,该结构在高温下常产生近端噪... 微波单片集成电路(MMIC)具有噪声性能好、集成度高、驱动能力强的优点。在MMIC工艺下,对压控振荡器(VCO)在高温下的特性表现进行了分析。现有使用负阻振荡原理设计的VCO电路分为负阻电路部分和谐振电路部分,该结构在高温下常产生近端噪声恶化和频率下降的现象,影响VCO的正常工作性能。通过对现有MMICVCO产品的仿真测试和分析,探得了高温下VCO性能改变的原因。 展开更多
关键词 MMIC 压控振荡器 高温特性改变
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The Jitter Performance Comparison Between DLL and PLL-Based RF CMOS Oscillators
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作者 李金城 仇玉林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第10期1246-1249,共4页
By jitter performance comparison between PLL (Phase Locked Loop) and DLL (Delay Locked Loop),a helpful equation is derived for the structure choice between DLL and PLL based synthesizers fabricated in CMOS processes ... By jitter performance comparison between PLL (Phase Locked Loop) and DLL (Delay Locked Loop),a helpful equation is derived for the structure choice between DLL and PLL based synthesizers fabricated in CMOS processes to get an optimum jitter performance and power consumption.For a frequency synthesizer,a large multiple factor prefers PLL based configuration which consumes less power,while a small one needs DLL based topology which produces a better jitter performance. 展开更多
关键词 JITTER PLL DLL frequency synthesizer RF CMOS transceiver Local oscillator(LO) voltage controlled Delay Line(VCDL) vco
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High performance of low voltage controlled ring oscillator with reverse body bias technology
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作者 Akansha SHRIVASTAVA Anshul SAXENA Shyam AKASHE 《Frontiers of Optoelectronics》 CSCD 2013年第3期338-345,共8页
In complementary metal oxide semiconductor (CMOS) nanoscalc technology, power dissipation is becoming important metric. In this work low leakage voltage controlled ring oscillator circuit system was proposed for cri... In complementary metal oxide semiconductor (CMOS) nanoscalc technology, power dissipation is becoming important metric. In this work low leakage voltage controlled ring oscillator circuit system was proposed for critical communication systems with high oscillation frequency. An ideal approach has been presented with substrate biasing technique for reduction of power consumption. The simulation have been completed using cadence virtuoso 45 nm standard CMOS technology at room temperature 27~C with supply voltage Vc^d = 0.7 V. The simulation results suggest that voltage controlled ring oscillator has characterized with efficient low power voltage controlled oscillator (VCO) in term of minimum leakage power (1.23 nW) and maximum oscilla- tion frequency (4.76 GHz) with joint positive channel metal oxide semiconductor and negative channel metal oxide semiconductor (PMOS and NMOS) reverse sub- strate bias technique. PMOS, NMOS and joint reverse body bias techniques have been compared in the presented work. 展开更多
关键词 voltage controlled oscillator (vco leakagepower active power oscillation frequency efficiency cadence tool
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An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
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作者 Li-heng LOU Ling-ling SUN +1 位作者 Jun LIU Hai-jun GAO 《Journal of Zhejiang University-Science C(Computers and Electronics)》 SCIE EI 2013年第3期205-213,共9页
This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP ch... This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity.The simulation convergence is greatly improved by this method.An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement.The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting.The model is verified with an LC VCO design,and exhibits excellent convergence during simulation.The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy,respectively,indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency(RF) circuit design. 展开更多
关键词 Layout optimizing Modeling PSP Charge model Cross-coupled Metal-oxide-semiconductor(MOS) voltage controlled oscillator(vco)
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基于变压器磁调谐的双模W波段VCO
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作者 朱承同 徐雷钧 +1 位作者 谢月娥 陈元平 《半导体技术》 北大核心 2024年第2期164-170,共7页
提出了一种基于变压器的用于无变容管W波段压控振荡器(VCO)的磁调谐技术。通过控制变压器磁调谐线圈所连接MOS管的开关状态,引入了四个重叠的频率子带。所提出的可切换的六线圈变压器采用40 nm CMOS工艺的顶层厚金属设计,实现了较高的... 提出了一种基于变压器的用于无变容管W波段压控振荡器(VCO)的磁调谐技术。通过控制变压器磁调谐线圈所连接MOS管的开关状态,引入了四个重叠的频率子带。所提出的可切换的六线圈变压器采用40 nm CMOS工艺的顶层厚金属设计,实现了较高的输出频率稳定性和谐振腔品质因数。所采用的技术在对相位噪声的不利影响最小的情况下扩展了调谐范围,实现了无变容管W波段VCO的宽调谐范围和低功耗。所设计的双模W波段VCO输出频率为84.2~107.5 GHz,频率调谐范围大于24%,在1 V电源电压下功耗仅6.1 mW,在10 MHz偏移处的相位噪声为-107.203~-97.875 dBc/Hz。 展开更多
关键词 变压器 磁调谐 无变容管 W波段 压控振荡器(vco)
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CMOS Phase and Quadrature Pulsed Differential Oscillators Coupled through Microstrip Delay-Lines
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作者 Francesco Stilgenbauer Stefano Perticaroli Fabrizio Palma 《Circuits and Systems》 2014年第8期181-190,共10页
An innovative solution to design phase and quadrature pulsed coupled oscillators systems through electromagnetic waveguides is described in this paper. Each oscillator is constituted by an LC differential resonator re... An innovative solution to design phase and quadrature pulsed coupled oscillators systems through electromagnetic waveguides is described in this paper. Each oscillator is constituted by an LC differential resonator refilled through a couple of current pulse generator circuits. The phase and quadrature coupling between the two differential oscillators is achieved using delayed replicas of generated fundamentals from a resonator as driving signal of pulse generator injecting in the other resonator. The delayed replicas are obtained by microstrip-based delay-lines. A 2.4 - 2.5 GHz VCO has been implemented in a 150 nm RF CMOS process. Simulations showed at 1 MHz offset a phase noise of -139.9 dBc/Hz and a FOM of -189.1 dB. 展开更多
关键词 voltage controlled oscillator MICROSTRIP Delay-Line PHASE and QUADRATURE PHASE Noise
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A micromechanical bridge-shaped voltage-controlled oscillator
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作者 HAN Jianqiang ZHU Changchun ZHAO Hongpo LIU Junhua SHAO Jun 《Science China(Technological Sciences)》 SCIE EI CAS 2004年第1期26-32,共7页
A novel micromechanical bridge-shaped voltage-controlled oscillator with high Q value was fabricated. The core of this kind of oscillators is an electrothermally excited and piezoresistively detected micromechanical b... A novel micromechanical bridge-shaped voltage-controlled oscillator with high Q value was fabricated. The core of this kind of oscillators is an electrothermally excited and piezoresistively detected micromechanical bridge resonator. Its resonance frequency can be adjusted by changing the DC voltage applied to the Wheatstone bridge. Theoretical analysis and experimental data show that its resonance frequency is linear with the square of the DC voltage. The linearity is better than 0.16% and the adjustable frequency range excels 17.15%. 展开更多
关键词 voltage-controlled oscillator microbridge resonator MEMS.
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Locating Sources of Oscillations Induced by Control of Voltage Source Converters Based on Energy Structure and Nonlinearity Detection
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作者 Zetian Zheng Shaowei Huang +4 位作者 Jun Yan Qiangsheng Bu Chen Shen Mingzhong Zheng Ye Liu 《Journal of Modern Power Systems and Clean Energy》 SCIE EI CSCD 2024年第4期1285-1294,共10页
The oscillation phenomena associated with the control of voltage source converters(VSCs)are concerning,making it crucial to locate the sources of such oscillations and suppress the oscillations.Therefore,this paper pr... The oscillation phenomena associated with the control of voltage source converters(VSCs)are concerning,making it crucial to locate the sources of such oscillations and suppress the oscillations.Therefore,this paper presents a location scheme based on the energy structure and nonlinearity detection.The energy structure,which conforms to the principle of the energy-based method and dissipativity theory,is developed to describe the transient energy flow for VSCs,based on which a defined characteristic quantity is implemented to narrow the scope for locating the sources of oscillations.Moreover,based on the self-sustained oscillation characteristics of VsCs,an index for nonlinearity detection is applied to locate the VSCs that produce the oscillation energy.The combination of the energy structure and nonlinearity detection distinguishes the contribu-tions of different VSCs to the oscillation.The results of a case study implemented by the PSCAD/EMTDC simulation validate theproposed scheme. 展开更多
关键词 Double-loop proportional-integral(PI)control energy structure Hamiltonian model nonlinearity detection oscillation source location(OSL) voltage source converter(VSC)
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Wideband CMOS LC VCO design and phase noise analysis 被引量:1
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作者 郭雪锋 王志功 +1 位作者 李智群 唐路 《Journal of Southeast University(English Edition)》 EI CAS 2008年第4期433-436,共4页
A wideband LC cross-coupled voltage controlled oscillator(VCO) is designed and realized with standard 0. 18 μm complementary metal-oxide-semiconductor(CMOS) technology. Band switching capacitors are adopted to ex... A wideband LC cross-coupled voltage controlled oscillator(VCO) is designed and realized with standard 0. 18 μm complementary metal-oxide-semiconductor(CMOS) technology. Band switching capacitors are adopted to extend the frequency tuning range, and the phase noise is optimized in the design procedure. The functional relationships between the phase noise and the transistors' width-length ratios are deduced by a linear time variant (LTV) model. The theoretical optimized parameter value ranges are determined. To simplify the calculation, the working region is split into several sub-ranges according to transistor working conditions. Thus, a lot of integrations are avoided, and the phase noise function upon the design variables can be expressed as simple proportion formats. Test results show that the DC current is 8.8 mA under a voltage supply of 1.8 V; the frequency range is 1.17 to 1.90 GHz, and the phase noise reaches - 83 dBc/Hz at a 10 kHz offset from the carrier. The chip size is 1. 2 mm × 0. 9 mm. 展开更多
关键词 voltage controlled oscillator(vco) WIDEBAND phase noise
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应用于5.8 GHz频段雷达的高性能VCO的设计
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作者 张敬 陈磊 《电子设计工程》 2024年第17期117-121,126,共6页
为满足5.8 GHz频段的多普勒雷达系统应用需要,设计了一种基于HLMC 55 nm射频CMOS工艺的低功耗、低噪声、宽调谐范围压控振荡器(VCO)。该VCO采用了5位电容阵列,实现了4.9 GHz到7.3 GHz共2.4 GHz的宽调谐范围,且通过压控电容偏置方法,使... 为满足5.8 GHz频段的多普勒雷达系统应用需要,设计了一种基于HLMC 55 nm射频CMOS工艺的低功耗、低噪声、宽调谐范围压控振荡器(VCO)。该VCO采用了5位电容阵列,实现了4.9 GHz到7.3 GHz共2.4 GHz的宽调谐范围,且通过压控电容偏置方法,使得相邻子带频率重叠范围达到50%以上;为了提高VCO的噪声性能,使用了自行设计的8字电感,EM仿真下电感值为1.04 nH,品质因素Q值为16.8。后仿真结果表明,该VCO在1.2 V电源下工作电流1.5 mA,功耗1.8 mW。该VCO关注低频部分的相位噪声,优化相位噪声在100 Hz偏移处为-12 dBc/Hz,在1 MHz偏移处为-108.6 dBc/Hz,在10 MHz偏移处为-130.3 dBc/Hz。 展开更多
关键词 压控振荡器 低功耗 相位噪声 调谐范围 多普勒雷达
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Dual-Delay-Path Ring Oscillator with Self-Biased Delay Cells for Clock Generation
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作者 Agord de Matos Pinto Jr Raphael Ronald Noal Souza +2 位作者 Mateus Biancarde Castro Eduardo Rodrigues de Lima Leandro Tiago Manêra 《Circuits and Systems》 2023年第6期19-28,共10页
This work summarizes the structure and operating features of a high-performance 3-stage dual-delay-path (DDP) voltage-controlled ring oscillator (VCRO) with self-biased delay cells for Phase-Locked Loop (PLL) structur... This work summarizes the structure and operating features of a high-performance 3-stage dual-delay-path (DDP) voltage-controlled ring oscillator (VCRO) with self-biased delay cells for Phase-Locked Loop (PLL) structurebased clock generation and digital system driving. For a voltage supply V<sub>DD</sub> = 1.8 V, the resulting set of performance parameters include power consumption P<sub><sub></sub>DC</sub> = 4.68 mW and phase noise PN@1MHz = -107.8 dBc/Hz. From the trade-off involving P<sub>DC</sub> and PN, a system level high performance is obtained considering a reference figure-of-merit ( FoM = -224 dBc/Hz ). Implemented at schematic level by applying CMOS-based technology (UMC L180), the proposed VCRO was designed at Cadence environment and optimized at MunEDA WiCkeD tool. 展开更多
关键词 Phase Locked Loop (PLL) voltage-controlled Ring oscillators (VCRO) Dual-Delay-Path DDP Delay Cells
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基于负阻MMIC的新型VCO研制 被引量:9
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作者 郭文胜 陈君涛 邓海丽 《半导体技术》 CAS CSCD 北大核心 2012年第12期909-912,933,共5页
提出了一种基于负阻单片微波集成电路的新型压控振荡器(VCO)的设计方法,即负阻电路采用GaAs HBT工艺设计流片,调谐选频电路采用薄膜混合集成工艺制作。利用微封装技术将二者结合构成完整的VCO。这种新型VCO既具有单片微波集成电路的小... 提出了一种基于负阻单片微波集成电路的新型压控振荡器(VCO)的设计方法,即负阻电路采用GaAs HBT工艺设计流片,调谐选频电路采用薄膜混合集成工艺制作。利用微封装技术将二者结合构成完整的VCO。这种新型VCO既具有单片微波集成电路的小型化、低成本的优势,又保持了薄膜混合集成电路可灵活调试的特性。通过设计流片数款在不同频段的负阻单片微波集成电路,可完成频率1~18 GHz、小型化、系列化VCO的研制。X波段宽带VCO的实测结果显示,当电调电压在2~13 V变化时输出频率覆盖8~12.5 GHz,调谐线性度为2∶1,电调电压5 V时相位噪声为-96 dBc/Hz@100 kHz。 展开更多
关键词 负阻单片微波集成电路(MMIC) 压控振荡器 砷化镓异质结三极管 相位噪声 小型化
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多段LC VCO的自适应频段选择技术 被引量:2
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作者 齐贺飞 陈陵都 +2 位作者 赵瑞华 李晋 陈君涛 《半导体技术》 CAS CSCD 北大核心 2013年第11期812-816,共5页
摘要:研究了一款单片CMOSLc压控振荡器(VCO)。除可变电容和开关电容阵列外,设计中还应用了二叉树的原理。多频段VCO自适应选择最优工作频段,将压控电压置于预先设定的范围内,谐振频率放在该频段的中心附近,提高了VCO的工作稳定... 摘要:研究了一款单片CMOSLc压控振荡器(VCO)。除可变电容和开关电容阵列外,设计中还应用了二叉树的原理。多频段VCO自适应选择最优工作频段,将压控电压置于预先设定的范围内,谐振频率放在该频段的中心附近,提高了VCO的工作稳定性。设计难点在于如何控制压控电压位于合适的范围。将该VCO应用在锁相环(PLL)中,对锁相环芯片测试的结果表明,当压控电压为1~2V时,锁相环能够快速锁定,频率输出范围为600~1300MHz。电荷泵的NMOS和PMOS匹配最佳,相位噪声最好。自适应频段选择技术还提高了锁相环的工作可靠性,强制控制电压进入设定区间,保证了锁相环可靠入锁,在高、低温下也不会发生失锁。 展开更多
关键词 压控振荡器(vco) 二叉树 锁相环(PLL) 稳定性 多频段
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宽带HBT VCO单片电路的设计和制作 被引量:1
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作者 陈凤霞 蔡文胜 +1 位作者 戚伟 李远鹏 《半导体技术》 CAS CSCD 北大核心 2010年第1期8-13,共6页
针对传统采用的VCO设计理论,分析了VCO的基本结构及其工作原理,分析了负阻法和反馈法的优缺点,采用虚地法对VCO电路进行了分析和设计,从而简化了VCO的设计。同时利用EDA工具对微波宽带VCO单片电路进行优化和仿真,采用多种方法提高芯片... 针对传统采用的VCO设计理论,分析了VCO的基本结构及其工作原理,分析了负阻法和反馈法的优缺点,采用虚地法对VCO电路进行了分析和设计,从而简化了VCO的设计。同时利用EDA工具对微波宽带VCO单片电路进行优化和仿真,采用多种方法提高芯片性能。基于HBT工艺,设计出了宽带、低相位噪声的VCO单片电路,芯片工作电压为5V,工作电流为50~58mA,VCO振荡频率为3.2~6.2GHz,相噪为-73dBc/Hz@10kHz,输出功率11~14dBm。同时还阐述了采用片上外加变容管的优缺点以及改进方法。 展开更多
关键词 压控振荡器 频率 虚地 负阻 异质结双极晶体管
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一种低功耗宽频率调谐范围的伪差分环形VCO 被引量:4
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作者 卓汇涵 张万荣 +1 位作者 靳佳伟 周永旺 《半导体技术》 CAS CSCD 北大核心 2015年第5期343-347,共5页
设计了一种低功耗、宽频率调谐范围的伪差分环形压控振荡器(VCO)。电路设计分为振荡环路设计和电流源设计两部分。在振荡器的振荡环路部分,提出了一种新颖的降低功耗的方法,即通过动态地调节接入振荡环路的锁存器,减小驱动电流,降低功... 设计了一种低功耗、宽频率调谐范围的伪差分环形压控振荡器(VCO)。电路设计分为振荡环路设计和电流源设计两部分。在振荡器的振荡环路部分,提出了一种新颖的降低功耗的方法,即通过动态地调节接入振荡环路的锁存器,减小驱动电流,降低功耗;在振荡器的控制电源部分,采用gain-boost结构,设计了一款理想的可控双电流源,实现了振荡器的宽频率调谐范围。基于SMIC 65 nm工艺,在1.8 V工作电压下,对振荡器进行了后仿验证。结果表明,在频率为900 MHz时,振荡器的功耗仅为3.564 m W;当控制电压在0.6~1.8 V变化时,振荡器的频率调谐范围可宽达0.495~1.499 GHz。 展开更多
关键词 低功耗 动态锁存 调谐范围 理想电流源 压控振荡器(vco)
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一种新型电容阵列结构线性宽带VCO 被引量:1
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作者 徐雷钧 王超然 白雪 《微电子学》 CAS CSCD 北大核心 2016年第6期781-787,共7页
针对开关电容阵列结构压控振荡器(VCO)的非线性粗调谐特性,提出了一种新型的电容阵列结构线性宽带VCO。该VCO只有1组MOS电容、4路数字控制信号控制电阻阵列和电流源阵列,得到1组偏置直流电压以进行粗调谐;1路模拟控制电压通过电流叠加... 针对开关电容阵列结构压控振荡器(VCO)的非线性粗调谐特性,提出了一种新型的电容阵列结构线性宽带VCO。该VCO只有1组MOS电容、4路数字控制信号控制电阻阵列和电流源阵列,得到1组偏置直流电压以进行粗调谐;1路模拟控制电压通过电流叠加的方式叠加在MOS电容的控制电压上,进行精细调谐。电阻阵列控制不同数字控制信号下的调谐增益KVCO,与电流源阵列共同产生直流偏置电压以控制步进频率,可以灵活地精确设置不同数字信号控制下的电容值大小,取得线性的粗调谐特性。仿真结果显示,该VCO的调谐范围为5.00~5.87GHz,步进频率为166 MHz,调谐增益KVCO变化范围为-900^-450MHz/V,不同数字控制信号下的调谐特性几乎相同,比传统二进制电容阵列拥有更好的粗调谐特性。1.8V供电电压下,电路最大消耗4.43mA直流电流。 展开更多
关键词 压控振荡器 宽带 线性化 电容阵列
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一种采用交错耦合VCO和高速前置分频器的频率合成器 被引量:4
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作者 陈钰 洪志良 傅志军 《微电子学》 CAS CSCD 北大核心 2001年第3期212-215,共4页
文章提出了一种采用延迟单元交错耦合压控振荡器 (VCO)和高速双系数前置分频器的锁相环 (PLL)频率合成器设计方法。采用 0 .2 5μm的 CMOS工艺模型 ,在 Cadence环境下模拟 ,在相同级数情况下 ,设计获得的 VCO比传统顺序连接的 VCO速度快... 文章提出了一种采用延迟单元交错耦合压控振荡器 (VCO)和高速双系数前置分频器的锁相环 (PLL)频率合成器设计方法。采用 0 .2 5μm的 CMOS工艺模型 ,在 Cadence环境下模拟 ,在相同级数情况下 ,设计获得的 VCO比传统顺序连接的 VCO速度快 1 .4倍 ;运用动态 D触发器实现的双系数前置分频器 ,最高速度可达 2 GHz。该锁相环频率合成器在 40 0 MHz~ 1 .1 GHz的宽频范围内都能保持良好的相位跟踪特性 ,温度系数为 886ppm/°C,电源反射比为 3.3% 展开更多
关键词 频率合成器 压控振荡器 前置分频器 交错耦合
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