Effects of Doping Trace Sm^(3+) and Gd^(3+) on Luminescent Character of Y_2O_2S∶Eu^(3+)

After trace Sm^3＋ ions and Gd^3＋ ions doping, the emission intensity of red phosphors Y2O2S： Eu^3 ＋ was enhanced and the voltage character （relation between emission intensity and excitation voltage） was improved while the other properties of physics and chemistry were not changed. The origins of enhancement and improvement are discussed. Probably the distortion and the defect of crystals are decreased by the substitution of Gd^3＋ for Y^3＋ instead of Eu^3＋ for Y^3＋ , and thus the Eu^3＋ crystal field is improved, and radiationless process and energy loss resulted from crystal defect are weakened, which leads to increased luminescence intensity and voltage character improvement. The overlapping fluorescent spectra of Y2O2S： Sm^3＋ emission and Y2O2S：Eu^3＋ excitation as well as Eu^3 ＋ excitation spectra transitions spectra lead to energy transfer from Sm^3 ＋ sensitization of Sm^3＋ ions fectively. containing Sm^3＋ excitation the possibility of resonance ions to Eu^3＋ ions, and the to Eu^3＋ ions is achieved effectively.

Energy spectrum of multi-radiation of X-rays in a low energy Mather-type plasma focus device

The multi-radiation of X-rays was investigated with special attention to their energy spectrum in a Mather-type plasma focus device （operated with argon gas）. The analysis is based on the effect of anomalous resistances. To study the energy spectrum, a four-channel diode X-ray spectrometer was used along with a special set of filters. The filters were suitable for detection of medium range X-rays as well as hard X-rays with energy exceeding 30 keV. The results indicate that the anomalous resistivity effect during the post pinch phase may cause multi-radiation of X-rays with a total duration of 300 ± 50 ns. The significant contribution of Cu-Kα was due to the medium range X-rays, nonetheless, hard X-rays with energies greater than 15 keV also participate in the process. The total emitted X-ray energy in the forms of Cu-K and Cu-K/3 was around 0.14 ± 0.02 （J/Sr） and 0.04 ±0.01 （J/Sr）, respectively. The total energy of the emitted hard X-ray （〉 15 keV） was around 0.12± 0.02 （J/Sr）.

Influence of bias voltage on structure,mechanical and corrosion properties of reactively sputtered nanocrystalline TiN films

Nanocrystalline TiN films were prepared by DC reactive magnetron sputtering.The influence of substrate biases on structure,mechanical and corrosion properties of the deposited films was studied using X-ray diffraction,field emission scanning electron microscopy,nanoindentation and electrochemical techniques.The deposited films have a columnar structure,and their preferential orientation strongly depends on bias voltage.The preferential orientations change from（200）plane at low bias to（111）plane at moderate bias and then to（220）plane at relatively high bias.Nanohardness H,elastic modulus E,H/E＊and H3/E＊2 ratios,and corrosion resistance of the deposited films increase first and then decrease with the increase in bias voltage.All the best values appear at bias of-120 V,attributing to the film with a fine,compact and less defective structure.This demonstrates that there is a close relation among microstructure,mechanical and corrosion properties of the TiN films,and the film with the best mechanical property can also provide the most effective corrosion protection.

Backgating effect in GaAs FETs with a channel–semi-insulating substrate boundary

This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate（backgating effect） in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a space charge zone. Any modulation in this area leads to response levels trapping the holes therein to the operating temperature. We subsequently developed a model treating the channel substrate interface as an N–P junction, allowing us to deduce the time dependence of the component parameters of the total resistance R ds, the pinch-off voltage V P, channel resistance, fully open R co and the parasitic series resistance R S to bind the effect trap holes H1and H0. When compared with the experimental results, the values of the R DS（t S/ model for both traps show that there is an agreement between theory and experiment; it has inferred parameter traps, namely the density and the time constant of the trap. This means that a space charge region exists at the channel–substrate interface and that the properties can be approximated to an N–P junction.