An AlGaN/GaN high-electron mobility transistor(HEMT) with a novel source-connected air-bridge field plate(AFP) is experimentally verified.The device features a metal field plate that jumps from the source over the...An AlGaN/GaN high-electron mobility transistor(HEMT) with a novel source-connected air-bridge field plate(AFP) is experimentally verified.The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain.When compared to a similar size HEMT device with a conventional field plate(CFP) structure,the AFP not only minimizes the parasitic gate to source capacitance,but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current.In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm,three times higher forward blocking voltage of 375 V was obtained at VGS =-5 V.In contrast,a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process,regardless of device dimensions.Moreover,a temperature coefficient of 0 V/K for the breakdown voltage is observed.However,devices without a field plate(no FP) and with an optimized conventional field plate(CFP) exhibit breakdown voltage temperature coefficients of-0.113 V/K and-0.065 V/K,respectively.展开更多
A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of ...A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio( PSRR) of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^(-6)/℃-9. 56 × 10^(-6)/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^(-6)/℃.展开更多
This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a co...This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a conventional BGR in order to improve the temperature drift within wider temperature range, which include a piecewise-curvaturecorrected current in high temperature range, a piecewise-curvature-corrected current in low temperature range and a proportional-to-absolute-temperature T^(1.5) current. The high-PSRR characteristic of the proposed BGR is achieved by adopting the technique of pre-regulator. Simulation results shows that the temperature coefficient of the proposed BGR with pre-regulator is 8.42x10^(-6)′ /℃ from - 55 ℃ to 125 ℃ with a 1.8 V power supply voltage. The proposed BGR with pre-regulator achieves PSRR of - 123.51 dB, - 123.52 dB, - 88.5 dB and - 50.23 dB at 1 Hz, 100 Hz, 100 kHz and 1 MHz respectively.展开更多
基金Project supported by the Delta Science & Technology Educational Development Program (Grant No. DREK2010001)the Zhejiang Provincial Natural Science Foundation of China for Distinguished Young Scholars (Grant No. R1100468)
文摘An AlGaN/GaN high-electron mobility transistor(HEMT) with a novel source-connected air-bridge field plate(AFP) is experimentally verified.The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain.When compared to a similar size HEMT device with a conventional field plate(CFP) structure,the AFP not only minimizes the parasitic gate to source capacitance,but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current.In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm,three times higher forward blocking voltage of 375 V was obtained at VGS =-5 V.In contrast,a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process,regardless of device dimensions.Moreover,a temperature coefficient of 0 V/K for the breakdown voltage is observed.However,devices without a field plate(no FP) and with an optimized conventional field plate(CFP) exhibit breakdown voltage temperature coefficients of-0.113 V/K and-0.065 V/K,respectively.
基金Supported by the National Natural Science Foundation of China(61604109)the National High-Tech R&D Program of China(2015AA042605)
文摘A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio( PSRR) of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^(-6)/℃-9. 56 × 10^(-6)/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^(-6)/℃.
基金supported by the National Natural Science Foundation of China (61471075, 61301124)the 2013 Program for Innovation Team Building at Institutions of Higher Education in Chongqing (the Innovation Team of Smart Medical System and Key Technology)
文摘This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a conventional BGR in order to improve the temperature drift within wider temperature range, which include a piecewise-curvaturecorrected current in high temperature range, a piecewise-curvature-corrected current in low temperature range and a proportional-to-absolute-temperature T^(1.5) current. The high-PSRR characteristic of the proposed BGR is achieved by adopting the technique of pre-regulator. Simulation results shows that the temperature coefficient of the proposed BGR with pre-regulator is 8.42x10^(-6)′ /℃ from - 55 ℃ to 125 ℃ with a 1.8 V power supply voltage. The proposed BGR with pre-regulator achieves PSRR of - 123.51 dB, - 123.52 dB, - 88.5 dB and - 50.23 dB at 1 Hz, 100 Hz, 100 kHz and 1 MHz respectively.