CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on si...CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depthλ.Meanwhile,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.展开更多
Recently,machine learning-based technologies have been developed to automate the classification of wafer map defect patterns during semiconductormanufacturing.The existing approaches used in the wafer map pattern clas...Recently,machine learning-based technologies have been developed to automate the classification of wafer map defect patterns during semiconductormanufacturing.The existing approaches used in the wafer map pattern classification include directly learning the image through a convolution neural network and applying the ensemble method after extracting image features.This study aims to classify wafer map defects more effectively and derive robust algorithms even for datasets with insufficient defect patterns.First,the number of defects during the actual process may be limited.Therefore,insufficient data are generated using convolutional auto-encoder(CAE),and the expanded data are verified using the evaluation technique of structural similarity index measure(SSIM).After extracting handcrafted features,a boosted stacking ensemble model that integrates the four base-level classifiers with the extreme gradient boosting classifier as a meta-level classifier is designed and built for training the model based on the expanded data for final prediction.Since the proposed algorithm shows better performance than those of existing ensemble classifiers even for insufficient defect patterns,the results of this study will contribute to improving the product quality and yield of the actual semiconductor manufacturing process.展开更多
Accurately identifying defect patterns in wafer maps can help engineers find abnormal failure factors in production lines.During the wafer testing stage,deep learning methods are widely used in wafer defect detection ...Accurately identifying defect patterns in wafer maps can help engineers find abnormal failure factors in production lines.During the wafer testing stage,deep learning methods are widely used in wafer defect detection due to their powerful feature extraction capa-bilities.However,most of the current wafer defect patterns classification models have high complexity and slow detection speed,which are difficult to apply in the actual wafer production process.In addition,there is a data imbalance in the wafer dataset that seriously affects the training results of the model.To reduce the complexity of the deep model without affecting the wafer feature expression,this paper adjusts the structure of the dense block in the PeleeNet network and proposes a lightweight network WM‐PeleeNet based on the PeleeNet module.In addition,to reduce the impact of data imbalance on model training,this paper proposes a wafer data augmentation method based on a convolutional autoencoder by adding random Gaussian noise to the hidden layer.The method proposed in this paper has an average accuracy of 95.4%on the WM‐811K wafer dataset with only 173.643 KB of the parameters and 316.194 M of FLOPs,and takes only 22.99 s to detect 1000 wafer pictures.Compared with the original PeleeNet network without optimization,the number of parameters and FLOPs are reduced by 92.68%and 58.85%,respectively.Data augmentation on the minority class wafer map improves the average classification accuracy by 1.8%on the WM‐811K dataset.At the same time,the recognition accuracy of minority classes such as Scratch pattern and Donut pattern are significantly improved.展开更多
The process of wafer polishing is known to be highly demanding,and even small deviations in the processing parameters can have a significant impact on the quality of the wafers obtained.During the process of wafer pol...The process of wafer polishing is known to be highly demanding,and even small deviations in the processing parameters can have a significant impact on the quality of the wafers obtained.During the process of wafer polishing,maintaining a constant pressure value applied by the polishing head is essential to achieve the desired flatness of the wafer.The accuracy of the downward pressure output by the polishing head is a crucial factor in producing flat wafers.In this paper,the uncertainty component of downward pressure is calculated and its measurement uncertainty is evaluated,and a method for calculating downward pressure uncertainty traceable to international basic unit is established.Therefore,the reliability of double side polishing machine has been significantly improved.展开更多
In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a waf...In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a wafer-scale-based (WaferICTM) rapid prototyping platform for electronic systems. This technique will be embedded into the structure of the WaferIC, and will be used as a preventive measure to protect the wafer from possible damages that can be caused by excessive thermomechanical stress. The paper also presents spatial and spatiotemporal algorithms and the experimental results from an IR images collection campaign conducted using an IR camera.展开更多
For the outputs of two nth-order linear control systems to work in synchronization and meanwhile to track their commands, a H∞ synchronization control scheme is presented. In terms of two uncoupled single variable li...For the outputs of two nth-order linear control systems to work in synchronization and meanwhile to track their commands, a H∞ synchronization control scheme is presented. In terms of two uncoupled single variable linear systems, a multivariable coupled system is established by choosing one output and the difference of the two outputs as a new output vector, so that both command tracking and synchronization properties can be demonstrated by a H∞ performance index. To improve the synchronization and tracking performance and to guarantee the system robust stability, the mixed sensitivity H∞ design methodology is adopted. The presented synchronization scheme is then extended to the case where one of the two systems include two input variables, and then applied to the position synchronization control of a wafer-retical stage. The wafer-reticle stage consists of a wafer stage, a reticle coarse stage, and a reticle fine stage. The reticle coarse stage picks up the reticle fine stage. The three stages ought to tack their commands, but synchronization between the wafer stage and the reticle fine stage must be stressed in the tracking process. In the application, by appropriately determining the weighting matrices for the sensitivity function and the complementary sensitivity function, a satisfactory H∞ synchronization controller is obtained to realize highly accurate position synchronization,and to guarantee tracking performance. The above results are verified by simulation experiments.展开更多
Single-crystal silicon is an important material in the semiconductor and optical industries.However,being hard and brittle,a silicon wafer is vulnerable to subsurface cracks(SSCs)during grinding,which is detrimental t...Single-crystal silicon is an important material in the semiconductor and optical industries.However,being hard and brittle,a silicon wafer is vulnerable to subsurface cracks(SSCs)during grinding,which is detrimental to the performance and lifetime of a wafer product.Therefore,studying the formation of SSCs is important for optimizing SSC-removal processes and thus improving surface integrity.In this study,a statistical method is used to study the formation of SSCs induced during grinding of silicon wafers.The statistical results show that grinding-induced SSCs are not stochastic but anisotropic in their distributions.Generally,when grinding with coarse abrasive grains,SSCs form along the cleavage planes,primarily the{111}planes.However,when grinding with finer abrasive grains,SSCs tend to form along planes with a fracture-surface energy higher than that of the cleavage planes.These findings provide a guidance for the accurate detection of SSCs in ground silicon wafers.展开更多
Accompanying the unceasing progress of integrated circuit manufacturing technology, the mainstream production mode of current semiconductor wafer fabrication is featured with multi-variety, small batch, and individual...Accompanying the unceasing progress of integrated circuit manufacturing technology, the mainstream production mode of current semiconductor wafer fabrication is featured with multi-variety, small batch, and individual customization, which poses a huge challenge to the scheduling of cluster tools with single-wafer-type fabrication. Concurrent processing multiple wafer types in cluster tools, as a novel production pattern, has drawn increasing attention from industry to academia, whereas the corresponding research remains insufficient. This paper investigates the scheduling problems of dual-arm cluster tools with multiple wafer types and residency time constraints. To pursue an easy-to-implement cyclic operation under diverse flow patterns,we develop a novel robot activity strategy called multiplex swap sequence. In the light of the virtual module technology, the workloads that stem from bottleneck process steps and asymmetrical process configuration are balanced satisfactorily. Moreover, several sufficient and necessary conditions with closed-form expressions are obtained for checking the system's schedulability. Finally, efficient algorithms with polynomial complexity are developed to find the periodic scheduling, and its practicability and availability are demonstrated by the offered illustrative examples.展开更多
The prediction of indentation depth of abrasive grain in hydrophilic fixed-abrasive(FA)lapping is crucial for controlling material removal rate and surface quality of the work-piece being machined.By applying the theo...The prediction of indentation depth of abrasive grain in hydrophilic fixed-abrasive(FA)lapping is crucial for controlling material removal rate and surface quality of the work-piece being machined.By applying the theory of contact mechanics,a theoretical model of the indentation depth of abrasive grain was developed and the relationships between indentation depth and properties of contact pairs and abrasive back-off were studied.Also,the average surface roughness(Ra)of lapped wafer was approximately calculated according to the obtained indentation depth.To verify the rationality of the proposed model,a series of lapping experiments on lithium niobate(LN)wafers were carried out,whose average surface roughness Ra was measured by atomic force microscope(AFM).The experimental results were coincided with the theoretical predictions,verifying the rationality of the proposed model.It is concluded that the indentation depth of the fixed abrasive was primarily affected by the applied load,wafer micro hardness and pad Young′s modulus and so on.Moreover,the larger the applied load,the more significant the back-off of the abrasive grain.The model established in this paper is helpful to the design of FA pad and its machining parameters,and the prediction of Ra as well.展开更多
Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut ...Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.展开更多
According to theory of constraints( TOCs), the performance of a complex manufacturing system,such as a wafer fabrication system,is mainly determined by its bottleneck machine.A method of the identification and predict...According to theory of constraints( TOCs), the performance of a complex manufacturing system,such as a wafer fabrication system,is mainly determined by its bottleneck machine.A method of the identification and prediction of the bottleneck machine was proposed in transient states of a system. Firstly,the bottleneck index was formulated based on the workloads and the variability in wafer fabrication systems. Secondly, main factors causing the variability and their influences on the bottleneck machine in transient states of the system were analyzed and discussed. An effective bottleneck identification and prediction model was presented,which incorporated the variability and queuing theory,and took machine breakdowns and setups into considerations.Finally,the proposed bottleneck prediction method was verified by simulation experiments. Results indicate that the proposed bottleneck prediction method is feasible and effective.展开更多
The damaged and strain subsurface layers of semi insulating(SI) GaAs substrate were characterized non destructively by Raman back scattering.The study shows that the thicknesses of the damaged and strain layers are le...The damaged and strain subsurface layers of semi insulating(SI) GaAs substrate were characterized non destructively by Raman back scattering.The study shows that the thicknesses of the damaged and strain layers are less than 3μm.The damaged and strain layer can be removed after being etched in H 2SO 4·H 2O 2·H 2O for 1.5 min.展开更多
The capability of embedded piezoelectric wafer active sensors (PWAS) to perform in-situ nondestructive evaluation (NDE) for structural health monitoring (SHM) of reinforced concrete (RC) structures strengthened with f...The capability of embedded piezoelectric wafer active sensors (PWAS) to perform in-situ nondestructive evaluation (NDE) for structural health monitoring (SHM) of reinforced concrete (RC) structures strengthened with fiber reinforced polymer (FRP) composite overlays is explored. First, the disbond detection method were developed on coupon specimens consisting of concrete blocks covered with an FRP composite layer. It was found that the prescnce of a disbond crack drastically changes the electromecbanical (E/M) impedance spectrum measured at the PWAS terminals. The spectral changes depend on the distance between the PWAS and the crack tip. Second, large scale experiments were conducted on a RC beam strengthened with carbon fiber reinforced polymer (CFRP) composite overlay. The beam was subject to an acccleratcd fatigue load regime in a three-point bending configuration up to a total of807,415 cycles. During these fatigue tests, the CFRP overlay experienced disbonding beginning at about 500,000 cycles. The PWAS were able to detect the disbonding before it could be reliably seen by visual inspection. Good correlation between the PWAS readings and the position and extent of disbond damage was observed. These preliminary results demonstrate the potential of PWAS technology for SHM of RC structures strengthened with FRP composite ovcrlays.展开更多
This study investigated the stability behaviour of molecular monolayer symmetric chemically modified tetraether lipids caldarchaeol-PO<sub>4</sub> on the amino-silanised silicon wafer using Langmuir-Blodge...This study investigated the stability behaviour of molecular monolayer symmetric chemically modified tetraether lipids caldarchaeol-PO<sub>4</sub> on the amino-silanised silicon wafer using Langmuir-Blodgett films, Self Assembling Monolayers (SAMs), ellipsometry, and atomic force microscopy (AFM). The monolayers of caldarchaeol-PO<sub>4 </sub>were stable on the solid surface amino-silanised silicon wafer. The organizations of molecular monolayers caldarchaeol-PO<sub>4</sub> by Langmuir-Blodgett method and SAMs have been analyzed. The surface of pressure in Langmuir-Blodgett processing is carried out monolayers caldarchaeol-PO<sub>4</sub> more flat island inhomogeneous. Another method of monolayers caldarchaeol-PO<sub>4</sub> by SAMs is showed a large flat domain. Monolayers caldarchaeol-PO<sub>4</sub> by Langmuir-Blodgett method seems to be stable and chemically resistant after washing with organic solvent and an additional treatment ultrasonification with various thickness lipids arround 2 nm to 6 nm. Conversely, monolayer caldarchaeol-PO<sub>4</sub> by SAMs appears fewer than monolayers caldarchaeol-PO<sub>4</sub> by Langmuir-Blodgett method, the thickness of various from 1 nm to 3 nm.展开更多
SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate...SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p<sup>+</sup> seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n<sup>+</sup> regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n<sup>+</sup> region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 10<sup>19</sup> cm<sup>-3</sup>.展开更多
The surface damage and the damage depth in wire cut silicon wafers and inner diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X ray diffr...The surface damage and the damage depth in wire cut silicon wafers and inner diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X ray diffractometer. The results show that the surface of wire cut silicon wafers is rougher than that of ID cut silicon wafers and the surface damage in wire cut silicon wafers is more serious than that in ID cut silicon wafers, while the damage depth in wire cut silicon wafers is smaller than that in ID cut silicon wafers. The possible reasons for the generation of surface damage in wire cut silicon wafers were also discussed.展开更多
Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electronanalysis,X-ray double-crystal diffraction,selective etching and surface morphology analysis.The relation ...Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electronanalysis,X-ray double-crystal diffraction,selective etching and surface morphology analysis.The relation between crystalmismatch and interface property of such materials has been studied and the results could be understood in terms of the growth ki-netics at the heterojunction interface.The comparison of the characteristics of the electronic and optoelectronic devices fabricatedwith the wafers under different interface properties has been carried out.And it also has been demonstrated that the wafer surfacemorphology changes with the compositional gradation by certain relation.展开更多
Silicon wafers are the most widely used substrates for semiconductors. The falling price of silicon wafers has created tremendous pressure on silicon wafer manufacturers to develop cost-effective manufacturing process...Silicon wafers are the most widely used substrates for semiconductors. The falling price of silicon wafers has created tremendous pressure on silicon wafer manufacturers to develop cost-effective manufacturing processes. A critical issue in wafer production is the waviness induced by wire sawing. If this waviness is not removed, it will affect wafer flatness and semiconductor performance. In practice, both lapping and grinding have been used to flatten wire-sawn wafers. Although grinding is not as effective as lapping in removing waviness, it has many other advantages over lapping (such as higher throughput, fully automatic, and more benign to environment) and has great potential to reduce manufacturing cost of silicon wafers. This paper presents a finite element analysis (FEA) study on grinding and lapping of wire-sawn silicon wafers. An FEA model is first developed to simulate the waviness deformation of wire-sawn wafers in grinding and lapping processes. It is then used to explain how the waviness is removed or reduced by lapping and grinding and why the effectiveness of grinding in removing waviness is different from that of lapping. Furthermore, the model is used to study the effects of various parameters including active-grinding-zone orientation, grinding force, waviness wavelength, and waviness height on the reduction and elimination of waviness. Finally, the results of pilot experiments to verify the model are discussed.展开更多
基金Project supported by the Administration of Science,Technology and Industry of National Defense of China (Grant No.HTKJ2021KL504001)the National Natural Science Foundation of China (Grant Nos.12004297 and 12174364)+3 种基金the China Postdoctoral Science Foundation (Grant No.2022M712507)the Fundamental Research Funds for the Central Universities (Grant No.xzy01202003)the National 111 Project of China (Grant No.B14040)the support from the Instrument Analysis Center of Xi’an Jiaotong University。
文摘CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depthλ.Meanwhile,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.
基金the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.NRF-2021R1A5A8033165)the“Human Resources Program in Energy Technology”of the Korea Institute of Energy Technology Evaluation and Planning(KETEP)and was granted financial resources from the Ministry of Trade,Industry&Energy,Republic of Korea(No.20214000000200).
文摘Recently,machine learning-based technologies have been developed to automate the classification of wafer map defect patterns during semiconductormanufacturing.The existing approaches used in the wafer map pattern classification include directly learning the image through a convolution neural network and applying the ensemble method after extracting image features.This study aims to classify wafer map defects more effectively and derive robust algorithms even for datasets with insufficient defect patterns.First,the number of defects during the actual process may be limited.Therefore,insufficient data are generated using convolutional auto-encoder(CAE),and the expanded data are verified using the evaluation technique of structural similarity index measure(SSIM).After extracting handcrafted features,a boosted stacking ensemble model that integrates the four base-level classifiers with the extreme gradient boosting classifier as a meta-level classifier is designed and built for training the model based on the expanded data for final prediction.Since the proposed algorithm shows better performance than those of existing ensemble classifiers even for insufficient defect patterns,the results of this study will contribute to improving the product quality and yield of the actual semiconductor manufacturing process.
基金supported by a project jointly funded by the Beijing Municipal Education Commission and Municipal Natural Science Foundation under grant KZ202010005004.
文摘Accurately identifying defect patterns in wafer maps can help engineers find abnormal failure factors in production lines.During the wafer testing stage,deep learning methods are widely used in wafer defect detection due to their powerful feature extraction capa-bilities.However,most of the current wafer defect patterns classification models have high complexity and slow detection speed,which are difficult to apply in the actual wafer production process.In addition,there is a data imbalance in the wafer dataset that seriously affects the training results of the model.To reduce the complexity of the deep model without affecting the wafer feature expression,this paper adjusts the structure of the dense block in the PeleeNet network and proposes a lightweight network WM‐PeleeNet based on the PeleeNet module.In addition,to reduce the impact of data imbalance on model training,this paper proposes a wafer data augmentation method based on a convolutional autoencoder by adding random Gaussian noise to the hidden layer.The method proposed in this paper has an average accuracy of 95.4%on the WM‐811K wafer dataset with only 173.643 KB of the parameters and 316.194 M of FLOPs,and takes only 22.99 s to detect 1000 wafer pictures.Compared with the original PeleeNet network without optimization,the number of parameters and FLOPs are reduced by 92.68%and 58.85%,respectively.Data augmentation on the minority class wafer map improves the average classification accuracy by 1.8%on the WM‐811K dataset.At the same time,the recognition accuracy of minority classes such as Scratch pattern and Donut pattern are significantly improved.
文摘The process of wafer polishing is known to be highly demanding,and even small deviations in the processing parameters can have a significant impact on the quality of the wafers obtained.During the process of wafer polishing,maintaining a constant pressure value applied by the polishing head is essential to achieve the desired flatness of the wafer.The accuracy of the downward pressure output by the polishing head is a crucial factor in producing flat wafers.In this paper,the uncertainty component of downward pressure is calculated and its measurement uncertainty is evaluated,and a method for calculating downward pressure uncertainty traceable to international basic unit is established.Therefore,the reliability of double side polishing machine has been significantly improved.
文摘In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a wafer-scale-based (WaferICTM) rapid prototyping platform for electronic systems. This technique will be embedded into the structure of the WaferIC, and will be used as a preventive measure to protect the wafer from possible damages that can be caused by excessive thermomechanical stress. The paper also presents spatial and spatiotemporal algorithms and the experimental results from an IR images collection campaign conducted using an IR camera.
基金This project is supported by Japan Society for the Promotion of Sci-ence(No.P01208)National Natural Science Foundation of China (No.60104003).
文摘For the outputs of two nth-order linear control systems to work in synchronization and meanwhile to track their commands, a H∞ synchronization control scheme is presented. In terms of two uncoupled single variable linear systems, a multivariable coupled system is established by choosing one output and the difference of the two outputs as a new output vector, so that both command tracking and synchronization properties can be demonstrated by a H∞ performance index. To improve the synchronization and tracking performance and to guarantee the system robust stability, the mixed sensitivity H∞ design methodology is adopted. The presented synchronization scheme is then extended to the case where one of the two systems include two input variables, and then applied to the position synchronization control of a wafer-retical stage. The wafer-reticle stage consists of a wafer stage, a reticle coarse stage, and a reticle fine stage. The reticle coarse stage picks up the reticle fine stage. The three stages ought to tack their commands, but synchronization between the wafer stage and the reticle fine stage must be stressed in the tracking process. In the application, by appropriately determining the weighting matrices for the sensitivity function and the complementary sensitivity function, a satisfactory H∞ synchronization controller is obtained to realize highly accurate position synchronization,and to guarantee tracking performance. The above results are verified by simulation experiments.
基金Financial supports from the National Natural Science Foundation of China (Grants No.51575084)the Science Fund for Creative Research Groups of NSFC (Grants No.51621064) are gratefully acknowledged
文摘Single-crystal silicon is an important material in the semiconductor and optical industries.However,being hard and brittle,a silicon wafer is vulnerable to subsurface cracks(SSCs)during grinding,which is detrimental to the performance and lifetime of a wafer product.Therefore,studying the formation of SSCs is important for optimizing SSC-removal processes and thus improving surface integrity.In this study,a statistical method is used to study the formation of SSCs induced during grinding of silicon wafers.The statistical results show that grinding-induced SSCs are not stochastic but anisotropic in their distributions.Generally,when grinding with coarse abrasive grains,SSCs form along the cleavage planes,primarily the{111}planes.However,when grinding with finer abrasive grains,SSCs tend to form along planes with a fracture-surface energy higher than that of the cleavage planes.These findings provide a guidance for the accurate detection of SSCs in ground silicon wafers.
基金supported in part by the National Natural Science Foundation of China(71361014,61973242,61573265,51665018)the Major Fundamental Research Program of the Natural Science Foundation of Shaanxi Province(2017ZDJC-34)。
文摘Accompanying the unceasing progress of integrated circuit manufacturing technology, the mainstream production mode of current semiconductor wafer fabrication is featured with multi-variety, small batch, and individual customization, which poses a huge challenge to the scheduling of cluster tools with single-wafer-type fabrication. Concurrent processing multiple wafer types in cluster tools, as a novel production pattern, has drawn increasing attention from industry to academia, whereas the corresponding research remains insufficient. This paper investigates the scheduling problems of dual-arm cluster tools with multiple wafer types and residency time constraints. To pursue an easy-to-implement cyclic operation under diverse flow patterns,we develop a novel robot activity strategy called multiplex swap sequence. In the light of the virtual module technology, the workloads that stem from bottleneck process steps and asymmetrical process configuration are balanced satisfactorily. Moreover, several sufficient and necessary conditions with closed-form expressions are obtained for checking the system's schedulability. Finally, efficient algorithms with polynomial complexity are developed to find the periodic scheduling, and its practicability and availability are demonstrated by the offered illustrative examples.
基金supported by the Science Foundation of Aviation(No.2014ZE52055)the National Science Foundation of China(No.51675276)+1 种基金the Funding of Jiangsu Innovation Program for Graduate Education(No.KYLX_0231)the Fundamental Research Funds for the Central Universities
文摘The prediction of indentation depth of abrasive grain in hydrophilic fixed-abrasive(FA)lapping is crucial for controlling material removal rate and surface quality of the work-piece being machined.By applying the theory of contact mechanics,a theoretical model of the indentation depth of abrasive grain was developed and the relationships between indentation depth and properties of contact pairs and abrasive back-off were studied.Also,the average surface roughness(Ra)of lapped wafer was approximately calculated according to the obtained indentation depth.To verify the rationality of the proposed model,a series of lapping experiments on lithium niobate(LN)wafers were carried out,whose average surface roughness Ra was measured by atomic force microscope(AFM).The experimental results were coincided with the theoretical predictions,verifying the rationality of the proposed model.It is concluded that the indentation depth of the fixed abrasive was primarily affected by the applied load,wafer micro hardness and pad Young′s modulus and so on.Moreover,the larger the applied load,the more significant the back-off of the abrasive grain.The model established in this paper is helpful to the design of FA pad and its machining parameters,and the prediction of Ra as well.
文摘Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.
基金National Natural Science Foundations of China(Nos.61273035,71471135)
文摘According to theory of constraints( TOCs), the performance of a complex manufacturing system,such as a wafer fabrication system,is mainly determined by its bottleneck machine.A method of the identification and prediction of the bottleneck machine was proposed in transient states of a system. Firstly,the bottleneck index was formulated based on the workloads and the variability in wafer fabrication systems. Secondly, main factors causing the variability and their influences on the bottleneck machine in transient states of the system were analyzed and discussed. An effective bottleneck identification and prediction model was presented,which incorporated the variability and queuing theory,and took machine breakdowns and setups into considerations.Finally,the proposed bottleneck prediction method was verified by simulation experiments. Results indicate that the proposed bottleneck prediction method is feasible and effective.
文摘The damaged and strain subsurface layers of semi insulating(SI) GaAs substrate were characterized non destructively by Raman back scattering.The study shows that the thicknesses of the damaged and strain layers are less than 3μm.The damaged and strain layer can be removed after being etched in H 2SO 4·H 2O 2·H 2O for 1.5 min.
基金the National Seienee Foundation through grants NSF#CMS-9908293 and NSF INT-9904493the Federal Highway Administration and the South Carolina Department of TransPortation(projeet Number 614)
文摘The capability of embedded piezoelectric wafer active sensors (PWAS) to perform in-situ nondestructive evaluation (NDE) for structural health monitoring (SHM) of reinforced concrete (RC) structures strengthened with fiber reinforced polymer (FRP) composite overlays is explored. First, the disbond detection method were developed on coupon specimens consisting of concrete blocks covered with an FRP composite layer. It was found that the prescnce of a disbond crack drastically changes the electromecbanical (E/M) impedance spectrum measured at the PWAS terminals. The spectral changes depend on the distance between the PWAS and the crack tip. Second, large scale experiments were conducted on a RC beam strengthened with carbon fiber reinforced polymer (CFRP) composite overlay. The beam was subject to an acccleratcd fatigue load regime in a three-point bending configuration up to a total of807,415 cycles. During these fatigue tests, the CFRP overlay experienced disbonding beginning at about 500,000 cycles. The PWAS were able to detect the disbonding before it could be reliably seen by visual inspection. Good correlation between the PWAS readings and the position and extent of disbond damage was observed. These preliminary results demonstrate the potential of PWAS technology for SHM of RC structures strengthened with FRP composite ovcrlays.
文摘This study investigated the stability behaviour of molecular monolayer symmetric chemically modified tetraether lipids caldarchaeol-PO<sub>4</sub> on the amino-silanised silicon wafer using Langmuir-Blodgett films, Self Assembling Monolayers (SAMs), ellipsometry, and atomic force microscopy (AFM). The monolayers of caldarchaeol-PO<sub>4 </sub>were stable on the solid surface amino-silanised silicon wafer. The organizations of molecular monolayers caldarchaeol-PO<sub>4</sub> by Langmuir-Blodgett method and SAMs have been analyzed. The surface of pressure in Langmuir-Blodgett processing is carried out monolayers caldarchaeol-PO<sub>4</sub> more flat island inhomogeneous. Another method of monolayers caldarchaeol-PO<sub>4</sub> by SAMs is showed a large flat domain. Monolayers caldarchaeol-PO<sub>4</sub> by Langmuir-Blodgett method seems to be stable and chemically resistant after washing with organic solvent and an additional treatment ultrasonification with various thickness lipids arround 2 nm to 6 nm. Conversely, monolayer caldarchaeol-PO<sub>4</sub> by SAMs appears fewer than monolayers caldarchaeol-PO<sub>4</sub> by Langmuir-Blodgett method, the thickness of various from 1 nm to 3 nm.
文摘SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p<sup>+</sup> seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n<sup>+</sup> regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n<sup>+</sup> region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 10<sup>19</sup> cm<sup>-3</sup>.
文摘The surface damage and the damage depth in wire cut silicon wafers and inner diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X ray diffractometer. The results show that the surface of wire cut silicon wafers is rougher than that of ID cut silicon wafers and the surface damage in wire cut silicon wafers is more serious than that in ID cut silicon wafers, while the damage depth in wire cut silicon wafers is smaller than that in ID cut silicon wafers. The possible reasons for the generation of surface damage in wire cut silicon wafers were also discussed.
文摘Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electronanalysis,X-ray double-crystal diffraction,selective etching and surface morphology analysis.The relation between crystalmismatch and interface property of such materials has been studied and the results could be understood in terms of the growth ki-netics at the heterojunction interface.The comparison of the characteristics of the electronic and optoelectronic devices fabricatedwith the wafers under different interface properties has been carried out.And it also has been demonstrated that the wafer surfacemorphology changes with the compositional gradation by certain relation.
文摘Silicon wafers are the most widely used substrates for semiconductors. The falling price of silicon wafers has created tremendous pressure on silicon wafer manufacturers to develop cost-effective manufacturing processes. A critical issue in wafer production is the waviness induced by wire sawing. If this waviness is not removed, it will affect wafer flatness and semiconductor performance. In practice, both lapping and grinding have been used to flatten wire-sawn wafers. Although grinding is not as effective as lapping in removing waviness, it has many other advantages over lapping (such as higher throughput, fully automatic, and more benign to environment) and has great potential to reduce manufacturing cost of silicon wafers. This paper presents a finite element analysis (FEA) study on grinding and lapping of wire-sawn silicon wafers. An FEA model is first developed to simulate the waviness deformation of wire-sawn wafers in grinding and lapping processes. It is then used to explain how the waviness is removed or reduced by lapping and grinding and why the effectiveness of grinding in removing waviness is different from that of lapping. Furthermore, the model is used to study the effects of various parameters including active-grinding-zone orientation, grinding force, waviness wavelength, and waviness height on the reduction and elimination of waviness. Finally, the results of pilot experiments to verify the model are discussed.