Optimization of High Power 1.55-μm Single Lateral Mode Fabry-Perot Ridge Waveguide Lasers

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.

The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional photonic crystals

An electrically driven, single-longitudinal-mode GaAs based photonic crystal （PC） ridge waveguide （RWG） laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma （ICP） etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Performances of blue and green laser diodes（LDs） with different u-InGaN upper waveguides（UWGs） are investigated theoretically by using LASTIP. It is found that the slope efficiency（SE） of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In（0.05） Ga（0.95）N lower waveguide（LWG） is designed to reduce the optical loss, and its slope efficiency is improved significantly.

Accurate method for determining vibration temperatures, and gain limitation in pulse RF-discharge CO_2 laser

An accurate method of determining gain coefficients of pulse RF-discharge CO2 laser is developed, which involves the use of both the regular 00o1 and 00o2 laser transitions as probes of CO2 laser. The results indicate that the majority of transitions in discharge have anomalous gain coefficients under RF-discharge condition. This fact has not been generally recognized and the neglect of overlapping transitions can lead to errors in determining rotational temperature.

Multi-Channel FIR Laser Interferometer on the HL-2A Tokamak

In recent years, the high density plasma in the range of 10^19～ 10^20m^-3 have been operated in large or middle tokamak device in the world. A muhichannel far infrared interferometer for profile measurement of plasma density on HL-2A divertor tokamak is being developed, however the design of the interferometer will appear many new problem in face of experimental environment of the HL-2A divertor device, such as how to make both transmission and arrangement of optics of the interferometer, the effect of electromo- tive force on device and how about the vibration etc. According to the eight windows setting on the largest flange of the device we have to design a Michelson-type FIR laser interferometer with 8 probing channels and eight concave mirrors must be attached it to the inner wall of the vacuum vessel of the device. Therefore, there are many problems should be taken into account to resolve, for example, （ 1 ） the vibration-proof consider for muhichannel interferometer and HCN laser, （2） the stabilization and reliability of the mirror frame uum vessel, the mirrors, hanging on internal wall of vachow to prevent the sputtering to （3） the vacuum seal of the windows and the design of mobile seal for the shutter to avoid the sputter coating of plasma,

Femtosecond laser-inscribed optical waveguides in dielectric crystals:a concise review and recent advances

Femtosecond laser inscription or writing has been recognized as a powerful technique to engineer various materials toward a number of applications.By efficient modification of refractive indices of dielectric crystals,optical waveguides with diverse configurations have been produced by femtosecond laser writing.The waveguiding properties depend not only on the parameters of the laser writing but also on the nature of the crystals.The mode profile tailoring and polarization engineering are realizable by selecting appropriate fabrication conditions.In addition,regardless of the complexity of crystal refractive index changes induced by ultrafast pulses,several three-dimensional geometries have been designed and implemented that are useful for the fabrication of laser-written photonic chips.Some intriguing devices,e.g.,waveguide lasers,wavelength converters,and quantum memories,have been made,exhibiting potential for applications in various areas.Our work gives a concise review of the femtosecond laser-inscribed waveguides in dielectric crystals and focuses on the recent advances of this research area,including the fundamentals,fabrication,and selected photonic applications.

Q-switching of waveguide lasers based on graphene/WS_2 van der Waals heterostructure

We report on the operation of passively Q-switched waveguide lasers at 1 μm wavelength based on a graphene∕WS_2 heterostructure as a saturable absorber(SA). The gain medium is a crystalline Nd:YVO_4 cladding waveguide produced by femtosecond laser writing. The nanosecond waveguide laser operation at 1064 nm has been realized with the maximum average output power of 275 m W and slope efficiency of 37%. In comparison with the systems based on single WS_2 or graphene SA, the lasing Q-switched by a graphene∕WS_2 heterostructure SA possesses advantages of a higher pulse energy and enhanced slope efficiency, indicating the promisingapplications of van der Waals heterostructures for ultrafast photonic devices.

Photonic lattice-like waveguides in glass directly written by femtosecond laser for on-chip mode conversion

We report on a conceptually new type of waveguide in glass by femtosecond laser direct writing,namely,photonic latticelike waveguide(PLLW).The PLLWfs core consists of well-distributed and densified tracks with a sub-micron size of 0.62μm in width.Specifically,a PLLW inscribed as hexagonal-shape input with a ring-shape output side was implemented to converse Gaussian mode to doughnut-like mode,and high conversion efficiency was obtained with a low insertion loss of 1.65 dB at 976 nm.This work provides a new freedom for design and fabrication of the refractive index profile of waveguides with sub-micron resolution and broadens the functionalities and application scenarios of femtosecond laser direct-writing waveguides in future 3D integrated photonic systems.

Intracavity biosensor based on the Nd:YAG waveguide laser: tumor cells and dextrose solutions

This work demonstrates the Nd:YAG waveguide laser as an efficient platform for the bio-sensing of dextrose solutions and tumor cells. The waveguide was fabricated in an Nd:YAG crystal with the cooperation of ultrafast laser writing and ion irradiation. The laser oscillation in the Nd:YAG waveguide is ultrasensitive to the external environment of the waveguide. Even a weak disturbance leads to a large variation of the output power of the laser.According to this feature, an Nd:YAG waveguide coated with graphene and WSe_2 layers is used as substrate for the microfluidic channel. When the microflow crosses the Nd:YAG waveguide, the laser oscillation in the waveguide is disturbed and induces fluctuation of the output laser. According to the fluctuation, the microflow is detected with a sensitivity of 10 mW/RIU.

810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures

The 810-nm InGaAlAs/AlGaAs double quantum well （QW） semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at continuous-wave （CW） power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^-1 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.

Compact waveguide CO_2 laser excited by a RF power supply

The design and performance of radio frequency (RF) excited partial Z-fold waveguide CO_2 laser with two channels are exposed. The length of the partial Z-fold channel is 3×460 mm and that of the single channel is 460 mm. The electrodes for the two channels are common and excited by a same RF source. According to our analysis, this kind of structure can greatly improve the laser offset frequency stability. In the experiments, we studied the variation of laser output power with gas pressure for two different channels. The maximum laser output power is about 23 W for the partial Z-fold channel and about 6 W for the single channel.

Post-fabrication phase trimming of Mach–Zehnder interferometers by laser annealing of germanium implanted waveguides

We demonstrate a novel high-accuracy post-fabrication trimming technique to fine-tune the phase of integrated Mach–Zehnder interferometers, enabling permanent correction of typical fabrication-based phase errors. The effective index change of the optical mode is 0.19 in our measurement, which is approximately an order of magnitude improvement compared to previous work with similar excess optical loss. Our measurement results suggest that a phase accuracy of 0.078 rad was achievable with active feedback control.

Multi-gigahertz laser generation based on monolithic ridge waveguide and embedded copper nanoparticles

Copper(Cu)nanoparticles(NPs)are synthesized under the near-surface region of the Nd∶Y_(3)Al_(5)O_(12)(Nd:YAG)crystal by direct Cu^(+)ions implantation.Subsequently,the monolithic ridge waveguide with embedded Cu NPs is fabricated by C^(4+)ions irradiation and diamond saw dicing.The nonlinear optical response of the sample is investigated by the Z-scan technique,and pronounced saturable absorption is observed at the 1030 nm femtosecond laser.Based on the obvious saturable absorption of Cu NPs embedded Nd:YAG crystal,1μm monolithic mode-locked pulsed waveguide laser is implemented by evanescent field interaction between NPs and waveguide modes,reaching the pulse duration of 24.8 ps and repetition rate of 7.8 GHz.The work combines waveguides with NPs,achieving pulsed laser devices based on monolithic waveguide chips.

Array Waveguide Grating Based Fiber Lasers

Two array waveguide grating (AWGs) based fiber ring lasers are experimentally demonstrated. Either of them achieves wavelength discrete tuning of 32 nm, or yields simultaneously lasing up to four channels with -7 dBm output power for each channel.

Fabrication of EAM-Integrated DFB Lasers With A Coupling Waveguide

EAM-DFB monolithic light sources with the coupling waveguide between laser and modulator have been developed. 10mw output light power at 90mA and 18dB extinction ratio at -2V has been achieved.

Amplified spontaneous emission, optical waveguide and polarized emission based on 2,5-diaminoterephthalates

A series of 2,5-diaminoterephthalates with a simple structure were synthesized through one-step reaction, and their bar-shaped single crystals with a large size and a smooth surface have been obtained via the solvent-evaporation method. These crystals exhibit bright emission with fluorescence quantum yields higher than 0.2. They display the waveguide property, and low optical loss coefficients for waveguide have been determined for the crystal of one compound. In addition, the crystal can cause linear polarization of the light emitted from it, with a high polarization contrast of 0.70. Most importantly, these crystals can realize amplified spontaneous emission （ASE）, including the red ASE, with appreciable energy thresholds of 72-198 kW/cm^2 and high gain coefficients, which suggests the potential of these crystals for the application in organic solid-state lasers.

1.06 μm high-power InGaAs/GaAsP quantum well lasers

The high power and low internal loss 1.06 μm InGaAs/GaAsP quantum well lasers with asymmetric waveguide structure were designed and fabricated. For a 4000 μm cavity length and 100 μm stripe width device,the maximum output power and conversion efficiency of the device are 7.13 W and 56.4%, respectively. The cavity length dependence of the threshold current density and conversion efficiency have been investigated theoretically and experimentally; the laser diode with 4000 μm cavity length shows better characteristics than that with 3000 and 4500 μm cavity length： the threshold current density is 132.5 A/cm^2, the slope efficiency of 1.00 W/A and the junction temperature of 15.62 K were achieved.