All-optical computing based on convolutional neural networks

The rapid development of information technology has fueled an ever-increasing demand for ultrafast and ultralow-en-ergy-consumption computing.Existing computing instruments are pre-dominantly electronic processors,which use elec-trons as information carriers and possess von Neumann architecture featured by physical separation of storage and pro-cessing.The scaling of computing speed is limited not only by data transfer between memory and processing units,but also by RC delay associated with integrated circuits.Moreover,excessive heating due to Ohmic losses is becoming a severe bottleneck for both speed and power consumption scaling.Using photons as information carriers is a promising alternative.Owing to the weak third-order optical nonlinearity of conventional materials,building integrated photonic com-puting chips under traditional von Neumann architecture has been a challenge.Here,we report a new all-optical comput-ing framework to realize ultrafast and ultralow-energy-consumption all-optical computing based on convolutional neural networks.The device is constructed from cascaded silicon Y-shaped waveguides with side-coupled silicon waveguide segments which we termed“weight modulators”to enable complete phase and amplitude control in each waveguide branch.The generic device concept can be used for equation solving,multifunctional logic operations as well as many other mathematical operations.Multiple computing functions including transcendental equation solvers,multifarious logic gate operators,and half-adders were experimentally demonstrated to validate the all-optical computing performances.The time-of-flight of light through the network structure corresponds to an ultrafast computing time of the order of several picoseconds with an ultralow energy consumption of dozens of femtojoules per bit.Our approach can be further expan-ded to fulfill other complex computing tasks based on non-von Neumann architectures and thus paves a new way for on-chip all-optical computing.

The Tolerance of All-Optical Switching Based on Cascaded Second-Order Nonlinearity in PPLN APE Waveguide

Based on solving the couple mode equation numerically, the characterization of the signal power on the gate power was analyzed. And the relationship of the tolerance of the grating period and the bulk temperature on the interaction length was analyzed.

Low-crosstalk silicon photonics arrayed waveguide grating

In this Letter,we demonstrate a 1×4 low-crosstalk silicon photonics cascaded arrayed waveguide grating,which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2μm buried oxide layer.The measured on-chip transmission loss of this cascaded arrayed waveguide grating is～4.0 dB,and the fiber-towaveguide coupling loss is 1.8 dB/facet.The measured channel spacing is 6.4 nm.The adjacent crosstalk by characterization is very low,only -33.2 dB.Compared to the normal single silicon photonics arrayed waveguide grating with a crosstalk of ～-12.5 dB,the crosstalk of more than 20 dB is dramatically improved in this cascaded device.

Synthesis and luminescent properties of ternary complex Eu(UVA)_3Phen in nano-TiO_2

By introducing 2-hydroxy-4-methoxy-benzophenone(UVA) and 1,10-phenanthroline(Phen) as the ligands, the ternary rare earth complex of Eu(UVA)3Phen is synthesized, and it is characterized by elemental analysis, mass spectra(MS) and infrared(IR) and ultraviolet(UV) spectroscopy. Results show that the Eu(III) in complex emits strong red luminescence when it is excited by UV light, and it has higher sensitized luminescent efficiency and longer lifetime. The organic-inorganic thin film of complex Eu(UVA)3Phen doped with nano-Ti O2 is prepared, and the nano-Ti O2 is used in the luminescence layer to change the luminescence property of Eu(UVA)3Phen. It is found that there is an efficient energy transfer process between ligands and metal ions. Moreover, in an indium tin oxide(ITO)/poly(N-vinylcar-bazole)(PVK)/Eu(UVA)3Phen/Al device, Eu3+ can be excited by intramolecular ligand-to-metal energy transfer process. The main peak of emission at 613 nm is attributed to 5D0→7F2 transition of the Eu3+, and this process results in the enhanced red emission.