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Van der Waals epitaxy: A new way for growth of Ⅲ-nitrides 被引量:2
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作者 CHEN Yang JIA Yu-Ping +2 位作者 SHI Zhi-Ming SUN Xiao-Juan LI Da-Bing 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2020年第3期528-530,共3页
Inorganic semiconductor plays a key role for today’s technological progress [1–4]. Comparing with other organic semiconductors [5,6] and two-dimensional(2D) metal sulfides [7–10], Ⅲ-nitrides as direct bandgap semi... Inorganic semiconductor plays a key role for today’s technological progress [1–4]. Comparing with other organic semiconductors [5,6] and two-dimensional(2D) metal sulfides [7–10], Ⅲ-nitrides as direct bandgap semiconductors have achieved enormous success in commercial applications. 展开更多
关键词 A new way for growth of Van der Waals epitaxy nitrides
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