A new 3-D hybrid framework {[（dafone）PbI2]（dafone）2}n 1 （dafone = 4,5-diazafluoren-9-one） has been prepared and structurally determined. 1 crystallizes in the monoclinic system, space group C2/c with a = 24.109...A new 3-D hybrid framework {[（dafone）PbI2]（dafone）2}n 1 （dafone = 4,5-diazafluoren-9-one） has been prepared and structurally determined. 1 crystallizes in the monoclinic system, space group C2/c with a = 24.109（8）, b = 16.596（8）, c = 7.983（3）A, β = 91.590（15）°, V = 3193（2）A^3, Z = 4, C33H18I2N6O3Pb, Mr = 1007.53, Dc = 2.096 g/cm^3, F（000） = 1880, μ（MoKα） = 7.262 mm^-1, the final R = 0.0352 and wR = 0.0951 for 3198 observed reflections with I 〉 2σ（I）. In the [（dafone）PbI2]n chain, the Pb center adopts a distorted octahedral coordination geometry and shares an edge to give a one-dimensional polymer. The 3-D arrangement of 1 constructs from H-bonds among dafone molecules and π-π stacking interactions among dissociative dafone molecules. These weak interactions contribute to the stability of the title compound. DFT calculation was carried out to reveal its electronic structure.展开更多
Amorphous indium-gallium-zinc oxide(a-IGZO)thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor(TFT)devices.In-situ x-ray photoelectron spectroscopy(XPS)illustrates that weakly b...Amorphous indium-gallium-zinc oxide(a-IGZO)thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor(TFT)devices.In-situ x-ray photoelectron spectroscopy(XPS)illustrates that weakly bonded oxygen(O)atoms exist in a-IGZO thin films deposited at high O_(2) pressures,but these can be eliminated by vacuum annealing.The threshold voltage(V_(th))of the a-IGZO TFTs is shifted under positive gate bias,and the Vth shift is positively related to the deposition pressure.A temperature variation experiment in the range of 20 K-300 K demonstrates that an activation energy of 144 meV is required for the Vth shift,which is close to the activation energy required for the migration of weakly bonded O atoms in a-IGZO thin films.Accordingly,the Vth shift is attributed to the acceptor-like states induced by the accumulation of weakly bonded O atoms at the a-IGZO/SiO_(2) interface under positive gate bias.These results provide an insight into the mechanism responsible for the Vth shift of the a-IGZO TFTs and help in the production of reliable designs.展开更多
The solvothermal reaction of H3dhpmc (H3dhpmc = 2, 4-dihydroxypyrimidine- 5-carboxylic acid), CuCl2稨2O and NaVO3 results in the formation of a discrete mononuclear Cu(Ⅱ) complex [Cu(H2dhpmc)2]?H2O. It crystallizes i...The solvothermal reaction of H3dhpmc (H3dhpmc = 2, 4-dihydroxypyrimidine- 5-carboxylic acid), CuCl2稨2O and NaVO3 results in the formation of a discrete mononuclear Cu(Ⅱ) complex [Cu(H2dhpmc)2]?H2O. It crystallizes in monoclinic system, space group P21/c with a = 5.0497(9), b = 10.0196(6), c = 13.715(2) ? b = 96.237(1)? V = 689.8(2) 3, Z = 2, Dc = 1.973 g/cm3, ?= 1.654 mm-1, F(000) = 414, R = 0.0736 and wR = 0.1351. Each Cu(Ⅱ) is coordinated to four oxygen atoms of two 2, 4-dihydroxypyrimidine-5-carboxylic acid ligands in the equatorial position and two oxygen atoms of two water molecules in the axial position to form an axially elongated octahedral geometry. The title complex is further linked into a three-dimensional structure through the weak interactions of hydrogen bonds between the oxygen atoms and the nitrogen atoms.展开更多
Grasping the underlying mechanisms behind the low lattice thermal conductivity of materials is essential for the efficient design and development of high-performance thermoelectric materials and thermal barrier coatin...Grasping the underlying mechanisms behind the low lattice thermal conductivity of materials is essential for the efficient design and development of high-performance thermoelectric materials and thermal barrier coating materials.In this paper,we present a first-principles calculations of the phonon transport properties of Janus Pb_(2)PAs and Pb_(2)SbAs monolayers.Both materials possess low lattice thermal conductivity,at least two orders of magnitude lower than graphene and h-BN.The room temperature thermal conductivity of Pb_(2)SbAs(0.91 W/m K)is only a quarter of that of Pb_(2)PAs(3.88 W/m K).We analyze in depth the bonding,lattice dynamics,and phonon mode level information of these materials.Ultimately,it is determined that the synergistic effect of low group velocity due to weak bonding and strong phonon anharmonicity is the fundamental cause of the intrinsic low thermal conductivity in these Janus structures.Relative regular residual analysis further indicates that the four-phonon processes are limited in Pb_(2)PAs and Pb_(2)SbAs,and the three-phonon scattering is sufficient to describe their anharmonicity.In this study,the thermal transport properties of Janus Pb_(2)PAs and Pb_(2)SbAs monolayers are illuminated based on fundamental physical mechanisms,and the low lattice thermal conductivity endows them with the potential applications in the field of thermal barriers and thermoelectrics.展开更多
Hydraulic-electric rock fragmentation(HERF)plays a significant role in improving the efficiency of high voltage pulse rock breaking.However,the underlying mechanism of HERF remains unclear.In this study,considering th...Hydraulic-electric rock fragmentation(HERF)plays a significant role in improving the efficiency of high voltage pulse rock breaking.However,the underlying mechanism of HERF remains unclear.In this study,considering the heterogeneity of the rock,microscopic thermodynamic properties,and shockwave time domain waveforms,based on the shockwave model,digital imaging technology and the discrete element method,the cyclic loading numerical simulations of HERF is achieved by coupling electrical,thermal,and solid mechanics under different formation temperatures,confining pressure,initial peak voltage,electrode bit diameter,and loading times.Meanwhile,the HERF discharge system is conducive to the laboratory experiments with various electrical parameters and the resulting broken pits are numerically reconstructed to obtain the geometric parameters.The results show that,the completely broken area consists of powdery rock debris.In the pre-broken zone,the mineral cementation of the rock determines the transition of type CⅠcracks to type CⅡand type CⅢcracks.Furthermore,the peak pressure of the shockwave increased with initial peak voltage but decreased with electrode bit diameter,while the wave front time reduced.Moreover,increasing well depth,formation temperature and confining pressure augment and inhibit HERF,but once confining pressure surpassed the threshold of 60 MPa for 152.40,215.90,and 228.60 mm electrode bits,and 40 MPa for 309.88 mm electrode bits,HERF is promoted.Additionally,for the same kind of rock,the volume and width of the broken pit increase with higher initial peak voltage and rock fissures will promote HERF.Eventually,the electrode drill bit with a 215.90 mm diameter is more suitable for drilling pink granite.This research contributes to a better microscopic understanding of HERF and provides valuable insights for electrode bit selection,as well as the optimization of circuit parameters for HERF technology.展开更多
基金Supported by the Natural Science Foundation of Fujian Province (E0710008)Innovation Fund for Young Scientist of Fujian Province (2007F3049)Fund of Education Committee of Fujian Province (JA07018)
文摘A new 3-D hybrid framework {[（dafone）PbI2]（dafone）2}n 1 （dafone = 4,5-diazafluoren-9-one） has been prepared and structurally determined. 1 crystallizes in the monoclinic system, space group C2/c with a = 24.109（8）, b = 16.596（8）, c = 7.983（3）A, β = 91.590（15）°, V = 3193（2）A^3, Z = 4, C33H18I2N6O3Pb, Mr = 1007.53, Dc = 2.096 g/cm^3, F（000） = 1880, μ（MoKα） = 7.262 mm^-1, the final R = 0.0352 and wR = 0.0951 for 3198 observed reflections with I 〉 2σ（I）. In the [（dafone）PbI2]n chain, the Pb center adopts a distorted octahedral coordination geometry and shares an edge to give a one-dimensional polymer. The 3-D arrangement of 1 constructs from H-bonds among dafone molecules and π-π stacking interactions among dissociative dafone molecules. These weak interactions contribute to the stability of the title compound. DFT calculation was carried out to reveal its electronic structure.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51771144 and 62104189)the Natural Science Foundation of Shaanxi Province,China(Grant Nos.2021JC-06,2019TD-020,and 2019JLM-30)+1 种基金the China Postdoctoral Science Foundation(Grant No.2020M683483)the Fundamental scientific research business expenses of Xi'an Jiaotong University(Grant No.XZY022020017).
文摘Amorphous indium-gallium-zinc oxide(a-IGZO)thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor(TFT)devices.In-situ x-ray photoelectron spectroscopy(XPS)illustrates that weakly bonded oxygen(O)atoms exist in a-IGZO thin films deposited at high O_(2) pressures,but these can be eliminated by vacuum annealing.The threshold voltage(V_(th))of the a-IGZO TFTs is shifted under positive gate bias,and the Vth shift is positively related to the deposition pressure.A temperature variation experiment in the range of 20 K-300 K demonstrates that an activation energy of 144 meV is required for the Vth shift,which is close to the activation energy required for the migration of weakly bonded O atoms in a-IGZO thin films.Accordingly,the Vth shift is attributed to the acceptor-like states induced by the accumulation of weakly bonded O atoms at the a-IGZO/SiO_(2) interface under positive gate bias.These results provide an insight into the mechanism responsible for the Vth shift of the a-IGZO TFTs and help in the production of reliable designs.
基金This work was supported by the National Natural Science Foundation of China
文摘The solvothermal reaction of H3dhpmc (H3dhpmc = 2, 4-dihydroxypyrimidine- 5-carboxylic acid), CuCl2稨2O and NaVO3 results in the formation of a discrete mononuclear Cu(Ⅱ) complex [Cu(H2dhpmc)2]?H2O. It crystallizes in monoclinic system, space group P21/c with a = 5.0497(9), b = 10.0196(6), c = 13.715(2) ? b = 96.237(1)? V = 689.8(2) 3, Z = 2, Dc = 1.973 g/cm3, ?= 1.654 mm-1, F(000) = 414, R = 0.0736 and wR = 0.1351. Each Cu(Ⅱ) is coordinated to four oxygen atoms of two 2, 4-dihydroxypyrimidine-5-carboxylic acid ligands in the equatorial position and two oxygen atoms of two water molecules in the axial position to form an axially elongated octahedral geometry. The title complex is further linked into a three-dimensional structure through the weak interactions of hydrogen bonds between the oxygen atoms and the nitrogen atoms.
基金Project supported by the Youth Science and Technology Talent Project of Hunan Province of China (Grant No.2022RC1197)the National Natural Science Foundation of China (Grant No.52372260)。
文摘Grasping the underlying mechanisms behind the low lattice thermal conductivity of materials is essential for the efficient design and development of high-performance thermoelectric materials and thermal barrier coating materials.In this paper,we present a first-principles calculations of the phonon transport properties of Janus Pb_(2)PAs and Pb_(2)SbAs monolayers.Both materials possess low lattice thermal conductivity,at least two orders of magnitude lower than graphene and h-BN.The room temperature thermal conductivity of Pb_(2)SbAs(0.91 W/m K)is only a quarter of that of Pb_(2)PAs(3.88 W/m K).We analyze in depth the bonding,lattice dynamics,and phonon mode level information of these materials.Ultimately,it is determined that the synergistic effect of low group velocity due to weak bonding and strong phonon anharmonicity is the fundamental cause of the intrinsic low thermal conductivity in these Janus structures.Relative regular residual analysis further indicates that the four-phonon processes are limited in Pb_(2)PAs and Pb_(2)SbAs,and the three-phonon scattering is sufficient to describe their anharmonicity.In this study,the thermal transport properties of Janus Pb_(2)PAs and Pb_(2)SbAs monolayers are illuminated based on fundamental physical mechanisms,and the low lattice thermal conductivity endows them with the potential applications in the field of thermal barriers and thermoelectrics.
基金supported by the National Natural Science Foundation of China(Nos.52034006,52004229,52225401,and 52274231)the Regional Innovation Cooperation Project of Sichuan Province(No.2022YFQ0059)+3 种基金Science and Technology Cooperation Project of the CNPC-SWPU Innovation Alliance(No.2020CX040301)Natural Science Foundation of Sichuan Province(No.2023NSFSC0431)Science and Technology Strategic Cooperation Project between Nanchong City and Southwest Petroleum University(No.SXHZ004)Research and innovation Fund for Graduate Students of Southwest Petroleum University(No.2022KYCX058).
文摘Hydraulic-electric rock fragmentation(HERF)plays a significant role in improving the efficiency of high voltage pulse rock breaking.However,the underlying mechanism of HERF remains unclear.In this study,considering the heterogeneity of the rock,microscopic thermodynamic properties,and shockwave time domain waveforms,based on the shockwave model,digital imaging technology and the discrete element method,the cyclic loading numerical simulations of HERF is achieved by coupling electrical,thermal,and solid mechanics under different formation temperatures,confining pressure,initial peak voltage,electrode bit diameter,and loading times.Meanwhile,the HERF discharge system is conducive to the laboratory experiments with various electrical parameters and the resulting broken pits are numerically reconstructed to obtain the geometric parameters.The results show that,the completely broken area consists of powdery rock debris.In the pre-broken zone,the mineral cementation of the rock determines the transition of type CⅠcracks to type CⅡand type CⅢcracks.Furthermore,the peak pressure of the shockwave increased with initial peak voltage but decreased with electrode bit diameter,while the wave front time reduced.Moreover,increasing well depth,formation temperature and confining pressure augment and inhibit HERF,but once confining pressure surpassed the threshold of 60 MPa for 152.40,215.90,and 228.60 mm electrode bits,and 40 MPa for 309.88 mm electrode bits,HERF is promoted.Additionally,for the same kind of rock,the volume and width of the broken pit increase with higher initial peak voltage and rock fissures will promote HERF.Eventually,the electrode drill bit with a 215.90 mm diameter is more suitable for drilling pink granite.This research contributes to a better microscopic understanding of HERF and provides valuable insights for electrode bit selection,as well as the optimization of circuit parameters for HERF technology.
