Fabrication of High Color Rendering Index White Light Emitting Diodes from Gold Nanoclusters

We demonstrated gold nanoclusters as color tunable emissive light converters for the application of white light emitting diodes (WLEDs). A blue LED providing 460 nm to excite gold nanoclusters mixed with UV curable material generates broad bandwidth emission at the visible range. Increasing the amount of gold nanoclusters, the correlated color temperature of WLEDs tuned from cold white to warm white, and also results in the variation of color rendering index (CRI). The highest CRI in the experiment is 92.

Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

Synthesis and luminescent properties of polycrystalline Gd_2(MoO_4)_3:Dy^(3+) for white light-emitting diodes

Polycrystalline Gd2(MoO4)3:Dy3+ phosphors have been synthesized by high temperature solid-state reaction method. The phosphors were characterized with X-ray diffractometer, thermogravimetric analysis and different scanning calorimeter, scanning electron microscopy, and photoluminescence spectrofluorimeter. Several peaks at 351, 389, 425, 452, and 472 nm appeared in photoluminescence excitation spectrum, which matched well with the emission of the ultraviolet (UV) and blue-light emitting diode (LED) chips. Upon excitation at 389 nm UV light, intense emissions centered at 484, 575 and 668 nm were attributed to the transitions of 4F9/2→6H15/2, 4F9/2→6H13/2 and 4F9/2→6H11/2 of Dy3+, respectively. The chromaticity coordinates and correlative color temperatures have been calculated and presented in the Commission International de I’Eclairage (CIE) diagrams. The results indicated that Gd1.9(MoO4)3:Dy0.13+ with CIE coordinates of (x=0.38, y=0.41) and the correlative color temperature of 4134 K is a potential candidate for white LEDs.

Temperature effects on photoluminescence of YAG:Ce^(3+) phosphor and performance in white light-emitting diodes

The well crystalline YAG：Ce^3＋ phosphor was synthesized by sold-state method, and the temperature dependence of excitation and emission spectra of YAG：Ce^3＋ phosphor were investigated in the temperature range from room temperature to 573 K. With temperature increasing, it was noted that the emission intensity of as-repared phosphors decreased considerably more rapidly when pumped by 460 nm than by 340 nm. The temperature-intensity curves under different excitation wavelengths were obtained using an Arrhenius function, and the corresponding activation energies were also obtained respectively. Thus, the experimental phenomenon was discussed in terms of nonradiative decay rate. The effects of as-prepared phosphors on the performance of the white LED with changing temperature were also studied.

A green-yellow emitting β-Sr_2SiO_4:Eu^(2+) phosphor for near ultraviolet chip white-light-emitting diode

Sr2SiO4：xEu^2＋ phosphors were synthesized through the solid-state reaction technique. The crystal phase of Sr2SiO4：xEu^2＋ phosphor manipulated by Eu^2＋ concentration was studied. The phase transited from β to α＇ in Sr2SiO4：xEu^2＋ phosphor with increasing europium concentration. The single β phase was formed as x≤005 and changed α＇ phase when x〉0.01. The emission spectrum of the β-Sr2SiO4：Eu^2＋ phosphor consisted of a green-yellow broadband peaking at around 540 nm and a blue band at 470 nm under near ultraviolet excitation. The white LEDs by combining near ultraviolet chips with β-Sr2SiO4：Eu^2＋ phosphors were fabricated. The luminous efficiency （15.7lm/W） was higher than α＇-Sr2SiO4：Eu^2＋ phosphor white LED.

Potential red-emitting phosphor GdNbO_4:Eu^(3+),Bi^(3+) for near-UV white light emitting diodes

A red-emitting phosphor GdNbO4：Eu3＋,Bi3＋ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction （XRD）, particle size analyzer and fluorescence spectrometer. The single phase of GdNbO4：Eu3＋,Bi3＋ was obtained at 1150~C and the average particle diameter was about 2.30 μm. Excitation and emission spectra reveal that the phosphor can be ef- ficiently excited by ultraviolet （UV） light （394 nm） and emit the strong red light of 612 nm due to the Eu3＋ transition of SD0~TF2. The opti- mum content of Eu3＋ doped in the phosphor GdNbOn：Eu3＋ is 20mo1%. The phosphor Gdo.80NbO4：0.20Eu3＋,0.03Bi3＋ shows much stronger photoluminescence intensity and better chromaticity coordinates （x=0.642, 0.352） than GdNbO4：Eu3＋. It is confirmed that Gdo.80NbO4：0.20Eu3＋,0.03Bi3＋ is a potential candidate for near-UV chip-based white light emitting diodes.

Luminescence characteristics of Eu^(3+) activated borate phosphor for white light emitting diode

In this paper, the Sr3Y2 （BO3）4 ：Eu^3＋ phosphor was synthesized by high temperature solid-state reaction method and the luminescence characteristics were investigated. The emission spectrum exhibits one strong red emission at 613 nm corresponding to the electric dipole 5^Do-7^F2 transition of Eu^3＋ under 365 nm excitation, this is because Eu^3＋ substituted for Y^3＋ occupied the non-centrosymmetric position in the crystal structure of Sr3Y2（BO3）4. The excitation spectrum indicates that the phosphor can be effectively excited by ultraviolet （254 nm, 365 nm and 400 nm） and blue （470 nm） light. The effect of Eu^3＋ concentration on the red emission of Sr3Y2（BO3）4 ：Eu^3＋ was measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The Commission Internationale del＇Eclairage chromaticity （x, y） of Sr3Y2（BO3）4 ：Eu^3＋ phosphor is （0.640, 0.355） at 15 mol% Eu^3＋.

Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter

We characterized the 6,12-bis{[N-（3,4-dimethylphenyl）-N-（2,4,5-trimethylphenyl）]amino} chrysene （BmPAC）, which has been proven to be a blue fluorescent emission with high EL efficiency. The blue fluorescent device exhibits good performance with an external quantum efficiency of 5.8% and current efficiency of 8.9 cd/A, respectively. Using BmPAC, we also demonstrate a hybrid phosphorescence/fluorescence white organic light-emitting device （WOLED） with high efficiency of 36.3 cd/A. In order to improve the relative intensity of blue light, we plus a blue light-emitting layer （BEML） in front of the orange light emitting layer （YEML） to take advantage of the excess singlet excitons. With the new emitting layer of BEML/YEML/BEML, we demonstrate the fluorescence/phosphorescence/fluorescence WOLED exhibits good performance with a current efficiency of 47 cd/A and an enhanced relative intensity of blue light.

High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

Levofloxacin （LOFX）, which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes （OLEDs）. In this paper, the fabricated white OLED contains a 452-nm blue emitting layer （thickness of 30 nm） with 1 wt% LOFX doped in CBP （4,4＇-bis（carbazol-9-yl）biphenyl） host and a 584-nm orange emitting layer （thickness of 10 nm） with 0.8 wt% DCJTB （4-（dicyanomethylene）-2-tert-butyl-6-（1,1,7,7- tetramethyljulolidin-4-yl-vinyl）-4H-pyran） doped in CBE which are separated by a 20-nm-thick buffer layer of TPBi （2,2＇,2＂-（benzene-1,3,5-triyl）-tri（1-phenyl-lH-benzimidazole）. A high color rendering index （CRI） of 84.5 and CIE chromaticity coordinates of （0.33, 0.32）, which is close to ideal white emission CIE （0.333, 0.333）, are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs.

Regulating Charge and Exciton Distribution in High-Performance Hybrid White Organic Light-Emitting Diodes with n-Type Interlayer Switch

The interlayer(IL) plays a vital role in hybrid white organic light-emitting diodes(WOLEDs); however,only a negligible amount of attention has been given to n-type ILs. Herein, the n-type IL, for the first time,has been demonstrated to achieve a high efficiency, high color rendering index(CRI), and low voltage trade-off.The device exhibits a maximum total efficiency of 41.5 lm W^(-1), the highest among hybrid WOLEDs with n-type ILs. In addition, high CRIs(80–88) at practical luminances(C1000 cd m^(-2)) have been obtained, satisfying the demand for indoor lighting. Remarkably, a CRI of 88 is the highest among hybrid WOLEDs. Moreover, the device exhibits low voltages, with a turn-on voltage of only 2.5 V([1 cd m^(-2)), which is the lowest among hybrid WOLEDs. The intrinsic working mechanism of the device has also been explored; in particular, the role of n-type ILs in regulating the distribution of charges and excitons has been unveiled. The findings demonstrate that the introduction of n-type ILs is effective in developing high-performance hybrid WOLEDs.

Enhancing The Efficiency of White Organic Light-emitting Diode Using Energy Recyclable Photovoltaic Cells

We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices(WOLED) and an organic photovoltaic(OPV) cell.The device is called a PVOLED.It has a glass / ITO / CuPc / m-MTDATA ∶ V 2 O 5 / NPB / CBP ∶ FIrpic ∶ DCJTB / BPhen / LiF / Al / P3HT∶ PCBM / V 2 O 5 / Al structure.The power recycling efficiency of 10.133% is achieved under the WOLED of PVOLED operated at 9 V and at a brightness of 2 110 cd / m 2,when the conversion efficiency of OPV is 2.3%.We have found that the power recycling efficiency is decreased under high brightness and high applied voltage due to an increase input power of WOLED.High efficiency(18.3 cd / A) and high contrast ratio(9.3) were obtained at the device operated at 2 500 cd / m 2 under an ambient illumination of 24 000 lx.Reasonable white light emission with Commission Internationale De L'Eclairage(CIE) color coordinates of(0.32,0.44) at 20 mA / cm 2 and slight color shift occurred in spite of a high current density of 50 mA / cm 2.The proposed PVOLED is highly promising for use in outdoors display applications.

Structure and luminescence of Ca_2Si_5N_8:Eu^(2+) phosphor for warm white light-emitting diodes

We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8：Eu^2＋ phosphor shows a broad red emission band centred at -1.97 eV-2.01 eV. The gravity centre of the excitation band is located at 3.0 eV 3.31 eV. The centroid shift of the 5d levels of Eu^2＋ is determined to be -1.17 eV, and the red-shift of the lowest absorption band to be - 0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang-Rhys parameter S = 6.0, the phonon energy hv = 52 meV, and the Stokes shift △S = 0.57 eV are obtained. The emission intensity maximum occurring at -200 K can be explained by a trapping effect. Both photoluminescence （PL） emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer （Cz6F） doped into polyvinyl carbazole （PVK） as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK：Cz6F blends are studied. Single and double layer devices are fabri- cated by using PVK： Cz6F blends, and the device with the configuration of indium tin oxide （ITO）/PVK：Cz6F/ tris（8-hydroxyquinolinate）aluminium （Alq3）/LiF/A1 exhibits white light emission with Commission Internationale de l＇Eclairage chromaticity coordinates of （0.30, 0.33） and a brightness of 402 cd/m^2. The investigation reveals that the white light is composed of a blue-green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK：Cz6F blend films.

A novel yellow emitting phosphor Dy^(3+),Bi^(3+) co-doped YVO_4 potentially for white light emitting diodes

Novel Y1-x-yVO4：xDy3＋, yBi3＋ （0.01 ≤ x ≤ 0.05,0 ≤ y ≤0.20） phosphors for light emitting diode （LED） were successfully synthesised by solid-state reaction. The calculation results of electronic structure show that YVO4 has a direct band gap with 3 eV at G. The top of the valence band is dominated by O 2p state and the bottom of the conduction band is mainly composed of O 2p and V 3d states. An efficient yellow emission under near-ultraviolet （365 nm） excitation is observed. Compared with the pure YVO4：Dy3＋ samples, the Dy3＋, Bi3＋ co-doped samples show a more intensive emission peak （at 574 nm） and a new broad emission band （450-770 nm）, due to the 4F9/2 - 6H13/2 transition of Dy3＋ and the emission of the VO43-Bi3＋ complex respectively. The optimum chromaticity index of Y1-x-yVO4：xDy3＋, yBi3＋ （0.01 ≤ x ≤0.05,0 ≤y ≤ 0.20） is （0.447, 0.497）, which indicates that YVO4：Dy3＋, Bi3＋ has higher colour saturation than the commercial phosphor YAG： Ce3＋. The effects of concentration of Dy3＋, Bi3＋, electric states and the photoluminescence properties are discussed in details.

White Organic Light-emitting Diodes with A Sr_2SiO_4:Eu^(3+) Color Conversion Layer

Abstract:Hybrid inorganic/organic white organic light emitting diodes(hybrid-WOLEDs)are fabricated by combi-ning the blue phosphorescent organic light emitting diodes(PHOLEDs)with red Sr2SiO4:Eu3+phosphor spin coatedas a color conversion layer(CCL)over the other side of glass substrate on the devices.The basic configuration of thePHOLEDs consists a host material,N,N'-dicarbazolyl-3,5-benzene(mCP)which doped with a blue phosphorescentiridium complexes iridium(Ⅲ)bis[(4,6-di-fluorophenyl)-pyridinato-N-C2'](FIrpic)to produce high efficient blueorganic light emitting diodes.The hybrid-WOLED shows maximum luminous efficiency of 22.1 cd/A,maximumpower efficiency of 11.26 lm/W,external quantum efficiency of 10.2%and CIE coordinates of(0.32,0.34).Mo-reover,the output spectra and CIE coordinates of the hybrid-WOLED have a small shift in different driving currentdensity,which demonstrate good color stability.

A novel yellow phosphor for white light emitting diodes

This paper reports that a novel yellow phosphor, LiSrBO3：Eu2＋, was synthesized by the solid-state reaction. Thc excitation and emission spectra indicate that this phosphor can be effectively excited by ultraviolet （360 and 400 nm） and blue （425 and 460 nm） light, and exhibits a satisfactory yellow performance （565 nm）. The role of concentration of Eu2＋ on the emission intensity in LiSrBO3 is studied, and it is found that the critical concentration is 3 mol%, and the concentration self-quenching mechanism is the dipole-dipole interaction according to the Dexter theory. White light emitting diodes were generated by using an InGaN chip （460 nm or 400 nm） with LiSrBO3：Eu2＋ phosphor, the CIE chromaticity is （x = 0.341, y =0.321） and （x = 0.324, y = 0.318）, respectively. Therefore, LiSrBOa：Eu^2＋ is a promising yellow phosphor for white light emitting diodes.

High efficient and high color rendering index white organic light-emitting diodes

We have fabricated high-efficient white organic light-emitting diodes （WOLEDs） using two types of electron transport materials with different electron mobility. The effect of the electron mobility on the device performance is discussed. In addition, to generate the desired white emission and high color rendering index, we perform the structure design of OLED, in which the functions of co-host of blue and green dopants on chromatic-stability are investigated. Experimental results find that the maximum color rendering index reaches as high as 91 at the voltage of 8 V.

Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure

A series of white phosphorescent OLED devices with buffer layer and multiple dopant structure is investigated in order to obtain better electro-optic performances and color stability. The color coordinate and color stability are related to the location of multiple dopants layer, and the optimized location can compensate for the change of the blue emission intensity under a high voltage and stabilize the spectrum. The electro-optic performances and color stability can be further improved by changing the composition and thickness of the buffer layer between the emitting layer and the electron transport layer.In device B2, the distance from multiple dopant layer to buffer layer is 2 nm and the thickness of buffer layer is 5 nm,the maximum luminance, current density, and power efficiency can reach 9091 cd/m^2, 364.5 mA/cm^2, and 26.74 lm/W,respectively. The variation of international commission on the illumination（CIE） coordinate of device B2 with voltage increasing from 4 V to 7 V is only（0.006, 0.004）.

Highly Efficient and Stable Hybrid White Organic Light Emitting Diodes with Controllable Exciton Behavior by a Mixed Bipolar Interlayer

Highly efficient and stable hybrid white organic light-emitting diodes （HWOLEDs） with a mixed bipolar interlayer between fluorescent blue and phosphorescent yellow emitting layers are demonstrated. The bipolar interlayer is a mixture of p-type diphenyl （l0-phenyl-lOH-spiro [acridine-9,9＇-fluoren]-3Lyl） phosphine oxide and n-type 2＇,2- （1,3,5-benzinetriyl）-tris（1-phenyl-l-H-benzimidazole）. The electroluminance and Commission Internationale de l＇Eclairage （CIE1931） coordinates＇ characteristics can be modulated easily by adjusting the ratio of the hole- predominated material to the electron-predominated material in the interlayer. The hybrid WOLED with a p-type：n-type ratio of 1：3 shows a maximum current efficiency and power efficiency of 61.1 ed/A and 55.8 lm/W, respectively, with warm white CIE coordinates of （0.34, 0.43）. The excellent efficiency and adaptive CIE coordi- nates are attributed to the mixed interlayer with improved charge carrier balance, optimized exciton distribution, and enhanced harvesting of singlet and triplet excitons.