Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety...Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.展开更多
In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on out...In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.展开更多
Spirofluorene （SF） and benzo[d][1,2,3]triazole （BTA） have been considered as promising building blocks to construct n-type photovoltaic materials. Herein, three new small molecule acceptors （SMAs） named BTA21, B...Spirofluorene （SF） and benzo[d][1,2,3]triazole （BTA） have been considered as promising building blocks to construct n-type photovoltaic materials. Herein, three new small molecule acceptors （SMAs） named BTA21, BTA23 and BTA27 with the structure of A2=A1-D-AI^A2 have been designed, in which SF and BTA were used as a central unit of D and bridged acceptor unit of A1, respectively. In addition, 3-ethylrhodanine, 2-（3-ethyl-4-oxothiazolidin-2-ylidene）malononitrile and malononitrile were chosen as terminal acceptor units to modulate the properties of the final SMAs. Three SMAs show wide optical band gaps （Eg） of 2.19, 2.15 and 2.22 eV, respectively, with gradually down-shift of the lowest unoccupied molecular orbital {LUMO） levels in the order of BTAZl, BTA23 and BTA27 depending on the electron-withdrawing capability of terminal acceptor units. BTA21 shows great advantages with respect to donor poly（3-hexylthiophene） （P3HT） over BTA23 and BTA27, such as well energy-level matching, complementary absorption and proper morpholgy, Concequently, P3HT：BTA21 shows the best power conversion efficiency （PCE） value of 3.28% with an open-circuit voltage （Voc） of 1.02 V, a short-circuit current （Jsc） of 5.45 mA.cm-2 and a fill factor （FF） of 0.59. These results indicate that the terminal acceptor group end-capped in SMAs plays a significant role in controlling their optical, electronic, and photovoltaic properties.展开更多
The rapid pace of change in the wide band gap(WBG)power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.The applications include automotive,aerospace and ...The rapid pace of change in the wide band gap(WBG)power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.The applications include automotive,aerospace and traction applications,as well as grid related or charging systems,with the potential to provide paradigm shifts in performance and efficiency over Silicon devices in current use today.Despite these exciting developments,however,there are still many outstanding challenges for both researchers and industry to solve before WBG technology becomes pervasive.In this paper we will explore some of these challenges and highlight the strengths of WBG devices,some of the specific issues for machine drives and develop some potential solutions for future developments in power electronics.展开更多
钙钛矿材料由于具有结构稳定、易于获取、成本低廉和易于合成等优点,在发光二极管、激光器和太阳能电池等光电器件领域具有广阔的应用前景。目前,部分适合UV-LED应用的钙钛矿具有结构不稳定性。为了寻找结构稳定的钙钛矿,此项研究利用...钙钛矿材料由于具有结构稳定、易于获取、成本低廉和易于合成等优点,在发光二极管、激光器和太阳能电池等光电器件领域具有广阔的应用前景。目前,部分适合UV-LED应用的钙钛矿具有结构不稳定性。为了寻找结构稳定的钙钛矿,此项研究利用第一性原理对无铅双钙钛矿Cs_(2)NaScX_(6)(X=Cl,Br,I)的电子及光学性质进行了理论计算。计算结果表明:Cs_(2)NaScX_(6)(X=Cl,Br,I)为直接带隙半导体,带隙值分别为5.545 e V(Cl)、4.549 eV(Br)和3.408 eV(I),Cs_(2)NaScI_(6)在紫外光范围内具有较强的光吸收。本研究内容为无铅A_(2)B^(I)B^(III)X_(6)型双钙钛矿成为UV-LED的候选材料提供理论支持。展开更多
基金National Natural Science Foundation of China(12205028)Natural Science Foundation of Sichuan Province(2022NSFSC1235)Young and Middle-aged Backbone Teacher Foundation of Chengdu University of Technology(10912-JXGG2022-08363)。
文摘Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.
文摘In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.
文摘Spirofluorene （SF） and benzo[d][1,2,3]triazole （BTA） have been considered as promising building blocks to construct n-type photovoltaic materials. Herein, three new small molecule acceptors （SMAs） named BTA21, BTA23 and BTA27 with the structure of A2=A1-D-AI^A2 have been designed, in which SF and BTA were used as a central unit of D and bridged acceptor unit of A1, respectively. In addition, 3-ethylrhodanine, 2-（3-ethyl-4-oxothiazolidin-2-ylidene）malononitrile and malononitrile were chosen as terminal acceptor units to modulate the properties of the final SMAs. Three SMAs show wide optical band gaps （Eg） of 2.19, 2.15 and 2.22 eV, respectively, with gradually down-shift of the lowest unoccupied molecular orbital {LUMO） levels in the order of BTAZl, BTA23 and BTA27 depending on the electron-withdrawing capability of terminal acceptor units. BTA21 shows great advantages with respect to donor poly（3-hexylthiophene） （P3HT） over BTA23 and BTA27, such as well energy-level matching, complementary absorption and proper morpholgy, Concequently, P3HT：BTA21 shows the best power conversion efficiency （PCE） value of 3.28% with an open-circuit voltage （Voc） of 1.02 V, a short-circuit current （Jsc） of 5.45 mA.cm-2 and a fill factor （FF） of 0.59. These results indicate that the terminal acceptor group end-capped in SMAs plays a significant role in controlling their optical, electronic, and photovoltaic properties.
文摘The rapid pace of change in the wide band gap(WBG)power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.The applications include automotive,aerospace and traction applications,as well as grid related or charging systems,with the potential to provide paradigm shifts in performance and efficiency over Silicon devices in current use today.Despite these exciting developments,however,there are still many outstanding challenges for both researchers and industry to solve before WBG technology becomes pervasive.In this paper we will explore some of these challenges and highlight the strengths of WBG devices,some of the specific issues for machine drives and develop some potential solutions for future developments in power electronics.
文摘钙钛矿材料由于具有结构稳定、易于获取、成本低廉和易于合成等优点,在发光二极管、激光器和太阳能电池等光电器件领域具有广阔的应用前景。目前,部分适合UV-LED应用的钙钛矿具有结构不稳定性。为了寻找结构稳定的钙钛矿,此项研究利用第一性原理对无铅双钙钛矿Cs_(2)NaScX_(6)(X=Cl,Br,I)的电子及光学性质进行了理论计算。计算结果表明:Cs_(2)NaScX_(6)(X=Cl,Br,I)为直接带隙半导体,带隙值分别为5.545 e V(Cl)、4.549 eV(Br)和3.408 eV(I),Cs_(2)NaScI_(6)在紫外光范围内具有较强的光吸收。本研究内容为无铅A_(2)B^(I)B^(III)X_(6)型双钙钛矿成为UV-LED的候选材料提供理论支持。
