Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a ...Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.展开更多
As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and l...As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.展开更多
Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ...Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability.Over the past several years,benefitting from the sustainable innovations in laser technology and the significant progress in materials technology,megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices.Here,we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode,including the mechanism,system architecture,critical technology,and experimental demonstration of the proposed high-power photonic microwave sources.The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.展开更多
TheⅡ-Ⅵbased magnetic semiconductors with a direct and wide optical bandgap are expected to show high potential for optical applications utilizing short wavelength laser diodes(LDs),such as 532-nm green and475-nm blu...TheⅡ-Ⅵbased magnetic semiconductors with a direct and wide optical bandgap are expected to show high potential for optical applications utilizing short wavelength laser diodes(LDs),such as 532-nm green and475-nm blue LDs.We have confirmed that the Faraday rotationθ_F in the ZnMnTe and ZnMnSe films deposited on quartz glass(QG)and sapphire(SA)substrates by using molecular beam epitaxy(MBE)is large near the absorption edge.This paper reports the magneto-optical properties of ZnMnTe and ZnMnSe films synthesized on the QG and SA substrates,and shows the result of a direct Faraday rotation observation successfully made for the ZnMnTe films under 1.28-kHz alternating magnetic fields.The optical absorption characteristics of the ZnMnTe films grown on the SA substrates by MBE are discussed by comparing them with the optical absorption properties and photoluminescence spectra of theⅡ-ⅥZnTe parent single crystals.展开更多
Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and optoelectronics.Prominent exa...Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and optoelectronics.Prominent examples of semiconductors include SiC,GaN,ZnO,and diamond,which exhibitdistinctive characteristics such as elevated mobility and thermalconductivity.These characteristics facilitate the operation of awide range of devices,including energy-efficient bipolar junctiontransistors(BJTs)and metal-oxide-semiconductor field-effecttransistors(MOSFETs),as well as high-frequency high-electronmobility transistors(HEMTs)and optoelectronic components suchas light-emitting diodes(LEDs)and lasers.These semiconductorsare used in building integrated circuits(ICs)to facilitate theoperation of power electronics,computer devices,RF systems,andother optoelectronic advancements.These breakthroughs includevarious applications such as imaging,optical communication,andsensing.Among them,the field of power electronics has witnessedtremendous progress in recent years with the development of widebandgap(WBG)semiconductor devices,which is capable ofswitching large currents and voltages rapidly with low losses.However,it has been proven challenging to integrate these deviceswith silicon complementary metal oxide semiconductor(CMOS)logic circuits required for complex control functions.The monolithic integration of silicon CMOS with WBG devices increases thecomplexity of fabricating monolithically integrated smart integrated circuits(ICs).This review article proposes implementingCMOS logic directly on the WBG platform as a solution.However,achieving the CMOS functionalities with the adoption of WBGmaterials still remains a significant hurdle.This article summarizesthe research progress in the fabrication of integrated circuitsadopting various WBG materials ranging from SiC to diamond,with the goal of building future smart power ICs.展开更多
文摘Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.
基金supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166)the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603)+2 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project(No.Z171100002017011)the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences
文摘As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.
基金supported in part by the National Natural Science Foundation of China(Nos.62071477 and 62101577)the Natural Science Foundation of Hunan Province(No.2021JJ40660)。
文摘Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability.Over the past several years,benefitting from the sustainable innovations in laser technology and the significant progress in materials technology,megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices.Here,we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode,including the mechanism,system architecture,critical technology,and experimental demonstration of the proposed high-power photonic microwave sources.The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.
基金supported by the Grants-in-Aid for Scientific Research(C)under Grant No.17560295-3620。
文摘TheⅡ-Ⅵbased magnetic semiconductors with a direct and wide optical bandgap are expected to show high potential for optical applications utilizing short wavelength laser diodes(LDs),such as 532-nm green and475-nm blue LDs.We have confirmed that the Faraday rotationθ_F in the ZnMnTe and ZnMnSe films deposited on quartz glass(QG)and sapphire(SA)substrates by using molecular beam epitaxy(MBE)is large near the absorption edge.This paper reports the magneto-optical properties of ZnMnTe and ZnMnSe films synthesized on the QG and SA substrates,and shows the result of a direct Faraday rotation observation successfully made for the ZnMnTe films under 1.28-kHz alternating magnetic fields.The optical absorption characteristics of the ZnMnTe films grown on the SA substrates by MBE are discussed by comparing them with the optical absorption properties and photoluminescence spectra of theⅡ-ⅥZnTe parent single crystals.
基金supported by KAUST BaselineFund:BAS/1/1664-01-01,KAUST Near-term Grand Challenge Fund:REI/1/4999-01-01,KAUST Impact Acceleration Fund:REI/1/5124-01-01.
文摘Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and optoelectronics.Prominent examples of semiconductors include SiC,GaN,ZnO,and diamond,which exhibitdistinctive characteristics such as elevated mobility and thermalconductivity.These characteristics facilitate the operation of awide range of devices,including energy-efficient bipolar junctiontransistors(BJTs)and metal-oxide-semiconductor field-effecttransistors(MOSFETs),as well as high-frequency high-electronmobility transistors(HEMTs)and optoelectronic components suchas light-emitting diodes(LEDs)and lasers.These semiconductorsare used in building integrated circuits(ICs)to facilitate theoperation of power electronics,computer devices,RF systems,andother optoelectronic advancements.These breakthroughs includevarious applications such as imaging,optical communication,andsensing.Among them,the field of power electronics has witnessedtremendous progress in recent years with the development of widebandgap(WBG)semiconductor devices,which is capable ofswitching large currents and voltages rapidly with low losses.However,it has been proven challenging to integrate these deviceswith silicon complementary metal oxide semiconductor(CMOS)logic circuits required for complex control functions.The monolithic integration of silicon CMOS with WBG devices increases thecomplexity of fabricating monolithically integrated smart integrated circuits(ICs).This review article proposes implementingCMOS logic directly on the WBG platform as a solution.However,achieving the CMOS functionalities with the adoption of WBGmaterials still remains a significant hurdle.This article summarizesthe research progress in the fabrication of integrated circuitsadopting various WBG materials ranging from SiC to diamond,with the goal of building future smart power ICs.
