Wide gap brazing（WGB） experiments using the butted specimen with a 1.5 mm gap were carried out for the repair of the failed K418B superalloy low-pressure turbine vanes.The high temperature creep rupture strengths of...Wide gap brazing（WGB） experiments using the butted specimen with a 1.5 mm gap were carried out for the repair of the failed K418B superalloy low-pressure turbine vanes.The high temperature creep rupture strengths of the brazed joints were tested,and the microstructures and fracture surfaces of the joints were observed.The results show that the microstructure of K418B alloy joint is composed of dense equiaxed grain,small and discrete compounds with a few micro-pores.During the creep rupture test,the cracks initiate preferentially at the micro-pore or the grain boundary,then propagate along the grain boundary till the fracture happens.The creep rupture strength at 700 ℃ of the brazed joints with 50% braze metal in the working part could exceed 90% that of the K418B superalloy,and the joints with 100% braze metal in the working part achieve 70% to 80% of the creep rupture strengths for the K418 B base metal.展开更多
This paper presents a self-consistent nonlinear theory of the current and energy modulations when an electron beam propagates through an inductively-loaded wide gap cavity. The integro-differential equations axe obtai...This paper presents a self-consistent nonlinear theory of the current and energy modulations when an electron beam propagates through an inductively-loaded wide gap cavity. The integro-differential equations axe obtained to describe the modulation of the beam current and kinetic energy. A relativistic klystron amplifier （RKA） model is introduced, which uses an inductively-loaded wide gap cavity as an input cavity. And a numerical code is developed for the extended model based on the equations, from which some relations about the modulated current and modulated energy are numerically given.展开更多
Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety...Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.展开更多
In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on out...In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.展开更多
Applications like solid oxide fuel cells and sensors increasingly demand the possibility to braze ceramics to metals with a good resistance to high temperatures and oxidative atmospheres. Commonly used silver based ac...Applications like solid oxide fuel cells and sensors increasingly demand the possibility to braze ceramics to metals with a good resistance to high temperatures and oxidative atmospheres. Commonly used silver based active filler metals cannot fulfill these requirements, if application temperatures higher than 600℃ occur. Au and Pd based active fillers are too expensive for many fields of use. As one possible solution nickel based active fillers were developed. Due to the high brazing temperatures and the low ductility of nickel based filler metals, the modification of standard nickel based filler metals were necessary to meet the requirements of above mentioned applications. To reduce thermally induced stresses wide brazing gaps and the addition of A1203 and WC particles to the filler metal were applied. In this study, the microstructure of the brazed joints and the thermo-chemical reactions between filler metal, active elements and WC particles were analyzed to understand the mechanism of the so called wide gap active brazing process. With regard to the behavior in typical application oxidation and thermal cycle tests were conducted as well as tensile tests.展开更多
The rapid pace of change in the wide band gap(WBG)power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.The applications include automotive,aerospace and ...The rapid pace of change in the wide band gap(WBG)power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.The applications include automotive,aerospace and traction applications,as well as grid related or charging systems,with the potential to provide paradigm shifts in performance and efficiency over Silicon devices in current use today.Despite these exciting developments,however,there are still many outstanding challenges for both researchers and industry to solve before WBG technology becomes pervasive.In this paper we will explore some of these challenges and highlight the strengths of WBG devices,some of the specific issues for machine drives and develop some potential solutions for future developments in power electronics.展开更多
Cubic silicon carbide(3C-SiC)has superior mobility and thermal conduction over that of widely applied hexagonal 4H-SiC.Moreover,much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC he...Cubic silicon carbide(3C-SiC)has superior mobility and thermal conduction over that of widely applied hexagonal 4H-SiC.Moreover,much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices like metal-oxidesemiconductor field effect transistors.However,the growth of high-quality and wafer-scale 3C-SiC crystals has remained a big challenge up to now despite decades-long efforts by researchers because of its easy transformation into other polytypes during growth,limiting the development of 3C-SiC-based devices.Herein,we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique,beyond what is expected by classical nucleation theory.This enables the steady growth of high-quality and large-size 3C-SiC crystals(2-4-inch in diameter and 4.0-10.0 mm in thickness)sustainable.The as-grown 3C-SiC crystals are free of other polytypes and have high-crystalline quality.Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.展开更多
钙钛矿材料由于具有结构稳定、易于获取、成本低廉和易于合成等优点,在发光二极管、激光器和太阳能电池等光电器件领域具有广阔的应用前景。目前,部分适合UV-LED应用的钙钛矿具有结构不稳定性。为了寻找结构稳定的钙钛矿,此项研究利用...钙钛矿材料由于具有结构稳定、易于获取、成本低廉和易于合成等优点,在发光二极管、激光器和太阳能电池等光电器件领域具有广阔的应用前景。目前,部分适合UV-LED应用的钙钛矿具有结构不稳定性。为了寻找结构稳定的钙钛矿,此项研究利用第一性原理对无铅双钙钛矿Cs_(2)NaScX_(6)(X=Cl,Br,I)的电子及光学性质进行了理论计算。计算结果表明:Cs_(2)NaScX_(6)(X=Cl,Br,I)为直接带隙半导体,带隙值分别为5.545 e V(Cl)、4.549 eV(Br)和3.408 eV(I),Cs_(2)NaScI_(6)在紫外光范围内具有较强的光吸收。本研究内容为无铅A_(2)B^(I)B^(III)X_(6)型双钙钛矿成为UV-LED的候选材料提供理论支持。展开更多
文摘Wide gap brazing（WGB） experiments using the butted specimen with a 1.5 mm gap were carried out for the repair of the failed K418B superalloy low-pressure turbine vanes.The high temperature creep rupture strengths of the brazed joints were tested,and the microstructures and fracture surfaces of the joints were observed.The results show that the microstructure of K418B alloy joint is composed of dense equiaxed grain,small and discrete compounds with a few micro-pores.During the creep rupture test,the cracks initiate preferentially at the micro-pore or the grain boundary,then propagate along the grain boundary till the fracture happens.The creep rupture strength at 700 ℃ of the brazed joints with 50% braze metal in the working part could exceed 90% that of the K418B superalloy,and the joints with 100% braze metal in the working part achieve 70% to 80% of the creep rupture strengths for the K418 B base metal.
文摘This paper presents a self-consistent nonlinear theory of the current and energy modulations when an electron beam propagates through an inductively-loaded wide gap cavity. The integro-differential equations axe obtained to describe the modulation of the beam current and kinetic energy. A relativistic klystron amplifier （RKA） model is introduced, which uses an inductively-loaded wide gap cavity as an input cavity. And a numerical code is developed for the extended model based on the equations, from which some relations about the modulated current and modulated energy are numerically given.
基金National Natural Science Foundation of China(12205028)Natural Science Foundation of Sichuan Province(2022NSFSC1235)Young and Middle-aged Backbone Teacher Foundation of Chengdu University of Technology(10912-JXGG2022-08363)。
文摘Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.
文摘In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.
文摘Applications like solid oxide fuel cells and sensors increasingly demand the possibility to braze ceramics to metals with a good resistance to high temperatures and oxidative atmospheres. Commonly used silver based active filler metals cannot fulfill these requirements, if application temperatures higher than 600℃ occur. Au and Pd based active fillers are too expensive for many fields of use. As one possible solution nickel based active fillers were developed. Due to the high brazing temperatures and the low ductility of nickel based filler metals, the modification of standard nickel based filler metals were necessary to meet the requirements of above mentioned applications. To reduce thermally induced stresses wide brazing gaps and the addition of A1203 and WC particles to the filler metal were applied. In this study, the microstructure of the brazed joints and the thermo-chemical reactions between filler metal, active elements and WC particles were analyzed to understand the mechanism of the so called wide gap active brazing process. With regard to the behavior in typical application oxidation and thermal cycle tests were conducted as well as tensile tests.
文摘The rapid pace of change in the wide band gap(WBG)power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.The applications include automotive,aerospace and traction applications,as well as grid related or charging systems,with the potential to provide paradigm shifts in performance and efficiency over Silicon devices in current use today.Despite these exciting developments,however,there are still many outstanding challenges for both researchers and industry to solve before WBG technology becomes pervasive.In this paper we will explore some of these challenges and highlight the strengths of WBG devices,some of the specific issues for machine drives and develop some potential solutions for future developments in power electronics.
基金supported by the Beijing Municipal Science and Technology Project(Grant No.Z211100004821004)the Special Project on Transfer and Conversion of Scientific and Technological Achievements of the Chinese Academy of Sciences(Grant No.KFJ-HGZX-042)
文摘Cubic silicon carbide(3C-SiC)has superior mobility and thermal conduction over that of widely applied hexagonal 4H-SiC.Moreover,much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices like metal-oxidesemiconductor field effect transistors.However,the growth of high-quality and wafer-scale 3C-SiC crystals has remained a big challenge up to now despite decades-long efforts by researchers because of its easy transformation into other polytypes during growth,limiting the development of 3C-SiC-based devices.Herein,we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique,beyond what is expected by classical nucleation theory.This enables the steady growth of high-quality and large-size 3C-SiC crystals(2-4-inch in diameter and 4.0-10.0 mm in thickness)sustainable.The as-grown 3C-SiC crystals are free of other polytypes and have high-crystalline quality.Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.
文摘钙钛矿材料由于具有结构稳定、易于获取、成本低廉和易于合成等优点,在发光二极管、激光器和太阳能电池等光电器件领域具有广阔的应用前景。目前,部分适合UV-LED应用的钙钛矿具有结构不稳定性。为了寻找结构稳定的钙钛矿,此项研究利用第一性原理对无铅双钙钛矿Cs_(2)NaScX_(6)(X=Cl,Br,I)的电子及光学性质进行了理论计算。计算结果表明:Cs_(2)NaScX_(6)(X=Cl,Br,I)为直接带隙半导体,带隙值分别为5.545 e V(Cl)、4.549 eV(Br)和3.408 eV(I),Cs_(2)NaScI_(6)在紫外光范围内具有较强的光吸收。本研究内容为无铅A_(2)B^(I)B^(III)X_(6)型双钙钛矿成为UV-LED的候选材料提供理论支持。
