A DC-to-32GHz 2Bit MEMS Phase Shifter

A two-bit phase shifter with distributed microelectromechanical system (MEMS) transmission line (DMTL) is developed,and a novel structure which be actuated by coplanar waveguide transmission line (CPW-actuation structure) is proposed,which can reduce the actuation voltage significantly.The measured result,with actuation voltage less than 20V,0°/20.1°/41.9°/68.2° phase shift and -1.2dB insert loss at 20GHz,is demonstrated,and insertion loss/return loss is better than -1.8dB/-11dB from DC to 32GHz.The experimental results highlight the potential of a low-loss and broadband digital MEMS phase shifter on a high-permittivity substrate.

A Uniform Reference Line Based Differential Phase Shifter with Wide Phase Range and Wide Bandwidth

To implement the multi-way phase shifting maintaining the compact size and simplicity in structure,the uniform reference line concept was proposed for the differential phase shifter.However,the performance in bandwidth and phase range deteriorates with the additional requirements considered.To solve this problem,a quarter wavelength coupled line section loaded with open/short stubs is proposed as the basic element to implement the main line and also reference line.According to the theoretical analysis on this basic element,the loading stubs can be used to control the phase shift and also the phase slope of the basic element without affecting the amplitude property.With the predetermined parameters of the uniform reference line,only two parameters are required for the implementation of different differential phase shifts.This demonstrates the high simplicity of the proposed structure.For demonstration,an eight-way differential phase shifter operating at 3.5 GHz was implemented using the vertically installed planar structure.The prototype was further fabricated and measured.Good agreement between simulation and measurement can be observed.The implemented phase shifter can provide a wide range of phase shifting values from 45°to 315°with reference to the uniform reference line over a relative bandwidth of 62.3%.

A monolithic distributed phase shifter based on right-handed nonlinear transmission lines at 30 GHz

The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360° differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than-10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.

New Feedback Architecture for VCO-Based Delta-Sigma ADCs Utilizing Phase Shifter

The voltage controlled oscillator-based （VCO-based） continuous-time delta-sigma （CTDS） analog to digital converter （ADC） suffers from nonlinearity and mismatch in its feedback network. A new feedback network consisting of a phase shifter is proposed. The phase shifter replaces the digital to analog converter （DAC） in the proposed architecture. Feasibility of the proposed idea is discussed and its higher performance is illustrated through a behavioral simulation approach （CppSim）. We have also developed the phase shifter as a variable all-pass filter in the C language. The nonlinearity and mismatch of the system caused by DAC is mitigated, resulting in higher signal to noise ratio （SNR） and signal to noise and distortion ratio （SNDR）, respectively.

Theory study on a photonic-assisted radio frequency phase shifter with direct current voltage control

A photonic-assisted radio frequency phase shifter with direct current voltage control is proposed using a polymer- based integrated Mach-Zehnder modulator. A closed-form expression of radio frequency （RF） signal power and phase is given. Theoretical calculation reveals that by carefully setting the bias voltages, RF signal power variation lower than 1-dB and phase accuracy less than 3° can be achieved and are not degraded by perturbation of modulation index once the bias voltage drift is kept within -3% -- 3%.

Study of Liquid Phase Shifter for ICRF on EAST

A method of current drive with Ion Cyclotron Range of Frequency （ICRF） on Experimental Advanced Superconducting Tokomak （EAST） is described. A variety of liquid silicon oil heights in the phase shifter will bring the phase difference to the current drive. It is found that the current drive can be achieved by using the phase shifter. The liquid phase shifter is one of the impedance matching systems too.

Single-Layer Symmetrical Full-Port Quasi-Absorptive Filtering Phase Shifter

In this article,a single-layer symmetrical full-port quasi-absorptive filtering phase shifter is presented.The proposed phase shifter is composed of a main quasi-absorptive filtering branch,a reference quasi-absorptive filtering branch,and two delay lines.The proposed phase shifter achieves both phase controlling function and quasi-absorptive filtering function for the first time.Each quasi-absorptive filtering branch can realize the quasi-absorptive filtering function.Meanwhile,the constant phase shift can be obtained by combining the two quasi-absorptive filtering branches and the two delay lines.The design formulas can be derived from the even-and odd-mode network analysis,and then two quasi-absorptive filtering phase shifters can be devised easily and quickly.For verification,a 90°quasi-absorptive filtering phase shifter,which is critical for circularly polarized antenna systems,is simulated,manufactured,and measured.

Experimental demonstration of a fast calibration method for integrated photonic circuits with cascaded phase shifters

With the development of research on integrated photonic quantum information processing,the integration level of the integrated quantum photonic circuits has been increasing continuously,which makes the calibration of the phase shifters on the chip increasingly difficult.For the calibration of multiple cascaded phase shifters that is not easy to be decoupled,the resources consumed by conventional brute force methods increase exponentially with the number of phase shifters,making it impossible to calibrate a relatively large number of cascaded phase shifters.In this work,we experimentally validate an efficient method for calibrating cascaded phase shifters that achieves an exponential increase in calibration efficiency compared to the conventional method,thus solving the calibration problem for multiple cascaded phase shifters.Specifically,we experimentally calibrate an integrated quantum photonic circuit with nine cascaded phase shifters and achieve a high-precision calibration with an average fidelity of 99.26%.

A 60 GHz Phased Array System Analysis and Its Phase Shifter in a 40 nm CMOS Technology

A 60 GHz phased array system for mm wave frequency in 5G is introduced and a 5 bit digitally controlled phase shifter in 40 nm CMOS technology is presented.In a phased array system,the signal to noise ratio(SNR)of the receiver is improved with the beaming forming function.Therefore,the communication data rate and distance are improved accordingly.The phase shifter is the key component for achieving the beam forming function,and its resolution and power consumption are also very critical.In the second half of this paper,an analysis of phase shifter is introduced,and a 60 GHz 5 bit digitally controlled phase shifter in 40 nm complementary metal oxide semiconductor(CMOS)technology is presented.In this presented phase shifter,a hybrid structure is implemented for its advantage on lower phase deviation while keeping comparable loss.Meanwhile,this digitally controlled phase shifter is much more compact than other works.For all 32 states,the minimum phase error is 1.5°,and the maximum phase error is 6.8°.The measured insertion loss is-20.9±1 dB including pad loss at 60 GHz and the return loss is more than 10 dB over 57-64 GHz.The total chip size is 0.24 mm^2 with 0 mW DC power consumption.

A new broadband differential phase shifter fabricated using a novel CRLH structure

Broadband phase shifters are mostly proposed and fabricated based on the scheme proposed by Shiffman, which uses a coupled line with far ends connected together and a uniform transmission line to give a differential phase shift. Based on the unique dispersion property of the composite right/left-handed (CRLH) metamaterial structure, a new configuration is presented in this paper for fabricating the broadband differential phase shifter, which employs a novel CRLH metamaterial structure as one of the differential phase-shift arms, instead of the conventional coupled line. The new circuit can achieve a phase shift of 90° in an operational bandwidth as broad as one octave and its phase deviations are quite small. An original design of the novel broadband phase shifter is presented, in which the artificial CRLH structure was implemented by microstrip quasi-lumped elements. Both the simulated and measured results of the 90° broadband differential phase shifter are presented.

Dispersion suppression scheme for Mach-Zehnder interferometer based interleaver using phase shifter

To suppress the dispersion effect, an improved scheme was proposed for Mach-Zehnder intefferometer （MZI） based interleaver. The device consists of an MZI, a fiber loop （FL）, and a phase shifter inserted in FL. The introduction of π phase shifter into FI, dramatically suppresses the dispersion effiect. Then the transmission response remains square-like shape, with low frequency deviation and high extinction ratio. Moreover, the lower frequency deviation is achieved by reducing the dispersion coefficient. For 100GHz-spacing interleaver, the 0.08nm deviation is reduced to 0.02nm by replacing G.652 with G.655.

Electro-Mechanical Phase Shifters Based on MEMS Structure

The aim of the study of phase shifter on MEMS （micro-electro-mechanical systems） structures was to minimize the dimensions of the design achievement. Also, the main task was to achieve the reliability and durability of the device. The calculation was based on the optimization technique （step by step） and the modeling of individual parts of the device, namely MEMS-keys that perform the main function--switching. The urgency of this problem is the development and study of one device as a universal, that is, automatically switches from two signals simultaneously. Designs are original and devises are the intellectual property of the authors. The program for modeling phase shifters Computer Simulation Technology Microwave Studio and its results are presented in the paper.

Study on BSTO/MgO Ferroelectric Materials for Phase Shift Doped with Rare Earth Oxides

Barium strontium titanate/magnesia （BSTO/MgO） ferroeleetric materials for phase shift were prepared by traditional ceramic process-solid phase synthesis. The effects of various rare earth oxides of 0.5 % on dielectric behaviors of BSTO/MgO composites were studied in terms of permittivity, loss tangent and tunability both at low and high frequencies. The dielectric constant of Y2O3 and Er2O3 doped samples decreases from 160 to 120, and the microwave loss of La2O3 and Er2O3 doped samples decreases from 8.2 x 10-3 to 6.8 x 10-3. Only La203 increases the tunability of BSTO/MgO system, from 13.6% to 14.8%. For the La2O3 doped sample, the value of tunability is more than 14% with the external DC field 4000 V·mm^-1 and the microwave loss at 2.47 GHz is 6.77 ×10^-3 and, hence, it can basically meet the requirements of phase shifters working at microwave frequencies. The influence mechanism was discussed preliminarily.

Preparation and Microstrutures of BSTO/MgO Ferroelectric Materials for Phase Shift

Barium strontium titanate/magnesia （BSTO/MgO） ferroelectric material for phase shift was prepared by traditional solid phase synthesis. The phase distribution, microstructure and electric properties were investigated. The results show that no secondary phase appears in the composites and the dimension of grains distributes uniformly. With 50 wt% MgO content, the dielectric tunability reaches 17.5 % in the external DC field of 4 000 Vomm^-1 and the microwave loss at about 2.5 GHz is 8×10^-3. Hence, it can be applied in tunable microwave phase shifters.

Silicon thermo-optic phase shifters:a review of configurations and optimization strategies

Silicon photonics(SiPh)has emerged as the predominant platform across a wide range of integrated photonics applications,encompassing not only mainstream fields such as optical communications and microwave signal processing but also burgeoning areas such as artificial intelligence and quantum processing.A vital component in most SiPh applications is the optical phase shifter,which is essential for varying the phase of light with minimal optical loss.Historically,SiPh phase shifters have primarily utilized the thermo-optic coefficient of silicon for their operation.Thermo-optic phase shifters(TOPSs)offer significant advantages,including excellent compatibility with complementary metal-oxide-semiconductor technology and the potential for negligible optical loss,making them highly scalable.However,the inherent heating mechanism of TOPSs renders them power-hungry and slow,which is a drawback for many applications.We thoroughly examine the principal configurations and optimization strategies that have been proposed for achieving energy-efficient and fast TOPSs.Furthermore,we compare TOPSs with other electro-optic mechanisms and technologies poised to revolutionize phase shifter development on the SiPh platform.

基于GaAs E/D PHEMT工艺的Ku波段双通道幅相控制多功能芯片

基于GaAs增强/耗尽型赝配高电子迁移率晶体管(E/D PHEMT)工艺设计了一款14~18 GHz的双通道多功能芯片。芯片集成了单刀双掷(SPDT)开关、6 bit数控移相器、4 bit数控衰减器和增益补偿放大器。采用正压控制开关以减小控制位数;优化移相、衰减和放大等电路拓扑结构,以获得良好的幅相特性;采用紧凑布局、双通道对称的版图设计,以实现小尺寸和高性能。测试结果表明,+5 V电压下,接收通道增益大于3 dB,1 dB压缩点输出功率大于8 dBm;发射通道增益大于1 dB,1 dB压缩点输出功率大于2 dBm;64态移相均方根误差小于2.5°,16态衰减均方根误差小于0.3 dB,芯片尺寸为3.90 mm×2.25 mm。该多功能芯片可实现对射频信号幅度和相位的高精度控制,可广泛应用于微波收发模块。

1μm/1.5μm基于非互易性相移器的高重频飞秒光纤激光器

高重频的飞秒脉冲激光器在工业加工、医疗、精密测量等各个领域都有着重要应用。为了分析“9”字腔锁模激光器的自启动性能,利用琼斯矩阵建立了非线性放大环形镜的传输函数,分析了环形镜中不同波片角度对腔内往返传输函数的影响。搭建了基于非线性放大环形镜的光纤激光器,分别使用了掺镱光纤、掺铒光纤作为增益介质,在1μm和1.5μm波段分别实现了重复频率为600 MHz和280 MHz的基频锁模。所设计的激光器具有脉宽窄、光谱宽、稳定性好、自启动成功率高的特点,激光器完成了集成化封装,能够满足微纳加工、激光医疗、光频率梳等领域对飞秒激光的应用需求。

基于加载线型的平面太赫兹移相器设计

移相器是相控阵系统中的重要组成器件,随着频率的增加,金属的趋肤深度及波导表面粗糙度对器件的影响不可忽略,会使移相器的损耗增加。对此,提出一种基于加载线型的平面太赫兹移相器。将2个枝节并联在微带线上,在并联枝节上加载开关二极管,调节两段枝节的电长度得到所需的移相量;控制开关的导通和断开,实现不同的移相角度。仿真结果表明,在192~210 GHz频带范围内,导通和断开的反射系数都小于-10 dB,插入损耗小于0.5 dB,移相误差小于5°,其中在5 GHz带宽范围内,移相误差小于1°。提出的平面型移相器,加工容易,成本低,便于系统集成化,在太赫兹相控阵系统中具有广泛的应用前景。

双温区脉管制冷机的制冷量主动调控策略

针对空间探测中须在双温区提供不同制冷量的新需求,提出利用声功回收主动调相器对双温区制冷量进行主动调控的方法.研究分析高温区调相器活塞运动特性对双温区冷指阻抗的影响,得到调相器对双温区冷指声功率分配及回热器效率的影响特性,实现80 K和40 K双温区制冷量主动调控.数值计算结果显示,调相器相位差对高温区制冷量影响较大,调相器振幅和相位差对低温区制冷量均有明显的影响.实验结果表明,采用基于主动控制调相器活塞运动特性的调节策略,80 K温区制冷量可以在9.2~23.7 W内主动调节,40 K温区制冷量可以在3.2~4.5 W内主动调节.

基于DP83640的秒脉冲移相器设计与实现

使用DP83640 IEEE 1588精密时间协议(PTP)收发芯片设计实现了一款秒脉冲精密移相器,它能与外部的标准秒脉冲(1 PPS)进行同步并进行精密相位微调,可应用于高精度相位微跃器。秒脉冲移相器采用DP83640芯片进行级联实现秒脉冲精密移相:利用ARM微处理器控制第二级DP83640实现与外部标准秒脉冲的相位粗调,控制第一级DP83640实现相位微调。相位调整时将外部输入的相位偏移量换算为8 ns整周期倍数的相位粗调值,以及不同时间长度档位的相位微调值,分别写入第二级和第一级DP83640共同实现高精度相位微跃。由于硬件电路特性和器件综合噪声的影响,经测试平均相位微跃准确度可以达到0.1 fs。