This paper presents a wideband low noise amplifier （LNA） for multi-standard radio applications. The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gate- indu...This paper presents a wideband low noise amplifier （LNA） for multi-standard radio applications. The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gate- inductive-peaking technique. High-frequency noise performance is consequently improved by the flattened gain over the entire operating frequency band. Fabricated in 0.18 μm CMOS process, the LNA achieves 2.5 GHz of -3 dB bandwidth and 16 dB of gain. The gain variation is within 4-0.8 dB from 300 MHz to 2.2 GHz. The measured noise figure （NF） and average IIP3 are 3.4 dB and -2 dBm, respectively. The proposed LNA occupies 0.39 mm2 core chip area. Operating at 1.8 V, the LNA drains a current of 11.7 mA.展开更多
The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve t...The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3-10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15-μm GaAs D-mode pHEMT technology. Based on those technologies, this proposed UWB LNA with a chip size of 1.5 mm x 1.4 mm, obtained a flatness gain 3-dB bandwidth of 4 - 8 GHz, the constant gain of 4 dB, noise figure lower than 5 dB, and the return loss better than –8.5 dB. Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 - 10 GHz. Finally, the overall LNA characterization exhibits ultra-wide bandwidth and low noise characterization, which illustrates that the proposed UWB LNA has a compact size and favorable RF characteristics. This UWB LNA circuit demonstrated the high RF characterization and could provide for the low noise micro-wave circuit applications.展开更多
A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, n...A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.展开更多
Low noise amplifier (LNA) performs as the initial amplification block in the receive path in a radio frequency (RF) receiver. In this work an ultra-wideband 3.1 10.6-GHz LNA is discussed. By using the proposed circuit...Low noise amplifier (LNA) performs as the initial amplification block in the receive path in a radio frequency (RF) receiver. In this work an ultra-wideband 3.1 10.6-GHz LNA is discussed. By using the proposed circuits for RF CMOS LNA and design methodology, the noise from the device is decreased across the ultra wide band (UWB) band. The measured noise figure is 2.66 3 dB over 3.1 10.6-GHz, while the power gain is 14 ± 0.8 dB. It consumes 23.7 mW from a 1.8 V supply. The input and output return losses (S11 & S22) are less than –11 dB over the UWB band. By using the modified derivative superposition method, the third-order intercept point IIP3 is improved noticeably. The complete circuit is based on the 0.18 μm standard RFCMOS technology and simulated with Hspice simulator.展开更多
This paper presents research on a low power CMOS UWB LNA based on a cascoded common source and current-reused topology. A systematic approach for the design procedure from narrow band to UWB is developed and discussed...This paper presents research on a low power CMOS UWB LNA based on a cascoded common source and current-reused topology. A systematic approach for the design procedure from narrow band to UWB is developed and discussed in detail. The power reduction can be achieved by using body biased technique and current-reused topology. The optimum width of the major transistor device M1 is determined by the power-constraint noise optimization with inner parasitic capacitance between the gate and source terminal. The derivation of the signal amplification S21 by high frequency small signal model is displayed in the paper. The optimum design of the complete circuit was studied in a step by step analysis. The measurements results show that the proposed circuit has superior S11, gain, noise figure, and power consumption. From the measured results, S11 is lower than -12 dB, S22 is lower than -10 dB and forward gain S21 has an average value with 12 dB. The noise figure is from 4 to 5.7 dB within the whole band. The total power consumption of the proposed circuit including the output buffer is 4.6 mW with a supply voltage of 1 V. This work is implemented in a standard TSMC 0.18 μm CMOS process technology.展开更多
This paper presents the design of a low power LNA with second stage that uses a notch filter for DS-UWB application. The LNA employs a current reuse structure to reduce the power consumption and an active second order...This paper presents the design of a low power LNA with second stage that uses a notch filter for DS-UWB application. The LNA employs a current reuse structure to reduce the power consumption and an active second order notch filter to produce band rejection in the 5 - 6 GHz frequency band. The input reflection coefficient S11 and output reflection S22 are both less than –10 dB. The maximum power gain S21 is 15 dB while the maximum rejection ratio is over –10 dB at 4.8 GHz. The minimum noise figure is 5 dB. The input referred third-order intercept point (IIP3) is –7 dBm at 6 GHz. The power consumption is 6.4 mW from a 1-V power supply.展开更多
基金Project Supported by the National Science and Technology Major Project of China(No.2009ZX03002-004)
文摘This paper presents a wideband low noise amplifier （LNA） for multi-standard radio applications. The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gate- inductive-peaking technique. High-frequency noise performance is consequently improved by the flattened gain over the entire operating frequency band. Fabricated in 0.18 μm CMOS process, the LNA achieves 2.5 GHz of -3 dB bandwidth and 16 dB of gain. The gain variation is within 4-0.8 dB from 300 MHz to 2.2 GHz. The measured noise figure （NF） and average IIP3 are 3.4 dB and -2 dBm, respectively. The proposed LNA occupies 0.39 mm2 core chip area. Operating at 1.8 V, the LNA drains a current of 11.7 mA.
文摘The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3-10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15-μm GaAs D-mode pHEMT technology. Based on those technologies, this proposed UWB LNA with a chip size of 1.5 mm x 1.4 mm, obtained a flatness gain 3-dB bandwidth of 4 - 8 GHz, the constant gain of 4 dB, noise figure lower than 5 dB, and the return loss better than –8.5 dB. Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 - 10 GHz. Finally, the overall LNA characterization exhibits ultra-wide bandwidth and low noise characterization, which illustrates that the proposed UWB LNA has a compact size and favorable RF characteristics. This UWB LNA circuit demonstrated the high RF characterization and could provide for the low noise micro-wave circuit applications.
基金Supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2009ZX02303-003)
文摘A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.
文摘Low noise amplifier (LNA) performs as the initial amplification block in the receive path in a radio frequency (RF) receiver. In this work an ultra-wideband 3.1 10.6-GHz LNA is discussed. By using the proposed circuits for RF CMOS LNA and design methodology, the noise from the device is decreased across the ultra wide band (UWB) band. The measured noise figure is 2.66 3 dB over 3.1 10.6-GHz, while the power gain is 14 ± 0.8 dB. It consumes 23.7 mW from a 1.8 V supply. The input and output return losses (S11 & S22) are less than –11 dB over the UWB band. By using the modified derivative superposition method, the third-order intercept point IIP3 is improved noticeably. The complete circuit is based on the 0.18 μm standard RFCMOS technology and simulated with Hspice simulator.
文摘This paper presents research on a low power CMOS UWB LNA based on a cascoded common source and current-reused topology. A systematic approach for the design procedure from narrow band to UWB is developed and discussed in detail. The power reduction can be achieved by using body biased technique and current-reused topology. The optimum width of the major transistor device M1 is determined by the power-constraint noise optimization with inner parasitic capacitance between the gate and source terminal. The derivation of the signal amplification S21 by high frequency small signal model is displayed in the paper. The optimum design of the complete circuit was studied in a step by step analysis. The measurements results show that the proposed circuit has superior S11, gain, noise figure, and power consumption. From the measured results, S11 is lower than -12 dB, S22 is lower than -10 dB and forward gain S21 has an average value with 12 dB. The noise figure is from 4 to 5.7 dB within the whole band. The total power consumption of the proposed circuit including the output buffer is 4.6 mW with a supply voltage of 1 V. This work is implemented in a standard TSMC 0.18 μm CMOS process technology.
文摘This paper presents the design of a low power LNA with second stage that uses a notch filter for DS-UWB application. The LNA employs a current reuse structure to reduce the power consumption and an active second order notch filter to produce band rejection in the 5 - 6 GHz frequency band. The input reflection coefficient S11 and output reflection S22 are both less than –10 dB. The maximum power gain S21 is 15 dB while the maximum rejection ratio is over –10 dB at 4.8 GHz. The minimum noise figure is 5 dB. The input referred third-order intercept point (IIP3) is –7 dBm at 6 GHz. The power consumption is 6.4 mW from a 1-V power supply.
