Wideband cryogenic amplifier for a superconducting nanowire single-photon detector

We present a low-power inductorless wideband differential cryogenic amplifier using a 0.13-μm Si Ge Bi CMOS process for a superconducting nanowire single-photon detector(SNSPD).With a shunt-shunt feedback and capacitive coupling structure,theoretical analysis and simulations were undertaken,highlighting the relationship of the amplifier gain with the tunable design parameters of the circuit.In this way,the design and optimization flexibility can be increased,and a required gain can be achieved even without an accurate cryogenic device model.To realize a flat terminal impedance over the frequency of interest,an RC shunt compensation structure was employed,improving the amplifier’s closed-loop stability and suppressing the amplifier overshoot.The S-parameters and transient performance were measured at room temperature(300 K)and cryogenic temperature(4.2 K).With good input and output matching,the measurement results showed that the amplifier achieved a 21-d B gain with a 3-d B bandwidth of 1.13 GHz at 300 K.At 4.2 K,the gain of the amplifier can be tuned from 15 to 24 d B,achieving a 3-d B bandwidth spanning from 120 k Hz to 1.3 GHz and consuming only 3.1 m W.Excluding the chip pads,the amplifier chip core area was only about 0.073 mm^(2).

Wideband Erbium-Ytterbium Co-Doped Phosphate Glass Waveguide Amplifier

A new '(?)' type of wideband erbium-ytterbium co-doped phosphate glass waveguide amplifier integrated with medium thin film filter is proposed, Average gain about 15.5dB between 1530nm and 1570nm with gain difference of below 2 dB is obtained.

An 8–18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS

A wideband CMOS power amplifier with high gain and excellent gain flatness for X-Ku-band radar phased array is proposed in this paper. Excellent gain flatness is achieved with transformer based matching networks(TMNs), in which the gain fluctuation of an inter-stage matching network can be compensated by the proposed design methods. The circuit is fabricated in the TSMC 65 nm RF CMOS process. The proposed technique is verified by the measurement results, which show that the wideband PA achieves gain of 21-22.5 dB with only±0.75 dB gain fluctuation and 13-14.6 dBm flat output power between 7.5 and 15.5 GHz,and a little more ripple in the rest of the X-Ku band due to the inaccuracy of passive modelling at high frequency. The circuit delivers saturated and 1 dB-compressed output power of 14.6 and 11.3 dBm respectively at 13 GHz, for a maximal poweradded efficiency(PAE) of 23%.

A 77–100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 m Ga As pseudomorphic HEMT（PHEMT） technology, demonstrated a flat small signal gain of12.4±2 d B with a minimum saturated output power（Psat） of 14.2 d Bm from 77 to 100 GHz. The typical Psat is better by 16.3 d Bm with a flatness of 0.4 d B and the maximum power added efficiency is 6% between 77 and92 GHz. This result shows that the amplifier delivers output power density of about 470 m W/mm with a total gate output periphery of 100 m. As far as we know, it is nearly the best power density performance ever published from a single ended Ga As-based PHEMT MMIC at this frequency band.

A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS

This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain.Incorporating an input inductor and a gate-inductive gain-peaking inductor,the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure.The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB.Under 1.2 V supply voltage,the proposed IF amplifier consumes 42 mW DC power.The chip die including pads takes up 0.53 mm~2,while the active area is only 0.022 mm~2.