Dynamic Simulation Analysis of the Working Device of a ZL50 Loader

In this study,assuming a certain type of wheel loader as the main objective of the research,the performances of the working device of the loader are investigated on the basis of an in-house code.After creating a three-dimensional model of the working device using Solidworks,this model has been imported into the dynamic simulation software ADAMS,and the simulation problem has been completed by adding the relevant constraints and loadings.The load stress curve relating to the main connecting point of the working device has been obtained in the frame work of this approach and it has been shown that the movement characteristics are compatible with(i.e.,they match)the actual working conditions.The present study may be regarded as a theoretical basis for the design and improvement of the working device of a vast category of wheel loaders.

Rapid Modeling of an Excavator Working Device Based on the Secondary Development of Pro/E

In order to shorten the design cycle of the excavator working device, we have proposed a rapid modeling method for the excavator working device which uses parameters. Based on the Pro/toolkit, which is secondary development tool of Pro/E4.0,and combined with Vs C＋＋2005 programming software. It developed a flexible set of MFC visualization-friendly interfaces. Users can enter data in the visual interface according to their needs and it will generate a new part model quickly. So it improves the design quality, shortens the design cycle, and makes the cost lower significantly.

Review of My Research Work on Ferroelectric Films and Si-Based Device Applications: Opportunity and Challenge

Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.