In order to thoroughly implement the national vocational education reform plan,vocational colleges and universities have vigorously promoted the reform of teaching materials.As a new form of teaching material,work man...In order to thoroughly implement the national vocational education reform plan,vocational colleges and universities have vigorously promoted the reform of teaching materials.As a new form of teaching material,work manual teaching materials highlight the characteristics of vocational education,provide the direction of vocational education textbook reform,and act as the foundation of the“three education”reform in vocational colleges.Based on the analysis of the current situation of the construction of teaching materials for higher vocational education,we explore the ideas for the development of work manual teaching materials,aiming to provide some reference for the development of teaching materials for vocational education in the new era.展开更多
Communicative language teaching is generally accepted in the field of second language teaching. In this paper, the author introduces a model of communicative language teaching. The authors also mention some practical ...Communicative language teaching is generally accepted in the field of second language teaching. In this paper, the author introduces a model of communicative language teaching. The authors also mention some practical requirements and methods in the application of this model, such as authentic materials and group work.展开更多
An analytical surface potential model for the single material double work function gate （SMDWG） MOSFET is developed based on the exact resultant solution of the two-dimensional Poisson equation. The model includes t...An analytical surface potential model for the single material double work function gate （SMDWG） MOSFET is developed based on the exact resultant solution of the two-dimensional Poisson equation. The model includes the effects of drain biases, gate oxide thickness, different combinations of S-gate and D-gate length and values of substrate doping concentration. More attention has been paid to seeking to explain the attributes of the SMDWG MOSFET, such as suppressing drain-induced barrier lowering （DIBL）, accelerating carrier drift velocity and device speed. The model is verified by comparison to the simulated results using the device simulator MEDICI. The accuracy of the results obtained using our analytical model is verified using numerical simulations. The model not only offers the physical insight into device physics but also provides the basic designing guideline for the device.展开更多
文摘In order to thoroughly implement the national vocational education reform plan,vocational colleges and universities have vigorously promoted the reform of teaching materials.As a new form of teaching material,work manual teaching materials highlight the characteristics of vocational education,provide the direction of vocational education textbook reform,and act as the foundation of the“three education”reform in vocational colleges.Based on the analysis of the current situation of the construction of teaching materials for higher vocational education,we explore the ideas for the development of work manual teaching materials,aiming to provide some reference for the development of teaching materials for vocational education in the new era.
文摘Communicative language teaching is generally accepted in the field of second language teaching. In this paper, the author introduces a model of communicative language teaching. The authors also mention some practical requirements and methods in the application of this model, such as authentic materials and group work.
基金supported by the National Youth Science Foundation of China(No.61006064)the Natural Science Foundation of Education Office,Anhui Province(No.KJ2013A071)
文摘An analytical surface potential model for the single material double work function gate （SMDWG） MOSFET is developed based on the exact resultant solution of the two-dimensional Poisson equation. The model includes the effects of drain biases, gate oxide thickness, different combinations of S-gate and D-gate length and values of substrate doping concentration. More attention has been paid to seeking to explain the attributes of the SMDWG MOSFET, such as suppressing drain-induced barrier lowering （DIBL）, accelerating carrier drift velocity and device speed. The model is verified by comparison to the simulated results using the device simulator MEDICI. The accuracy of the results obtained using our analytical model is verified using numerical simulations. The model not only offers the physical insight into device physics but also provides the basic designing guideline for the device.
