III-V Semiconductors containing a small amount of Bi, known as dilute bismides, have attracted great interest in recent years, due to the large band-gap reduction and other unique properties [1,2]. Previous studies ha...III-V Semiconductors containing a small amount of Bi, known as dilute bismides, have attracted great interest in recent years, due to the large band-gap reduction and other unique properties [1,2]. Previous studies have been pri- marily focused on the growth and optical properties of the GaAs-based bismuthides [3], while the properties of other dilute bismides are less well understood. Berding et al. [4] theoretically predicted that InPBi is expected to be an attractive candidate for narrow-gap applications. Experimentally, the InPBi alloy with good single crystal quality has been successfully synthesized recently and exhibits strong and broad photoluminescence at room temperature [5,6]. However, the electric transport characteristics of the InPBi alloy are poorly understood. In this work, we systematically investigate the effect of Bi incorporation on electric transport properties of the InP1-xBix alloys.展开更多
基金supported by the National Basic Research Program of China(Grant No.2014CB643900)the National Natural Science Foundation of China(Grant Nos.61225021,11474272,11204296,and 11474247)
文摘III-V Semiconductors containing a small amount of Bi, known as dilute bismides, have attracted great interest in recent years, due to the large band-gap reduction and other unique properties [1,2]. Previous studies have been pri- marily focused on the growth and optical properties of the GaAs-based bismuthides [3], while the properties of other dilute bismides are less well understood. Berding et al. [4] theoretically predicted that InPBi is expected to be an attractive candidate for narrow-gap applications. Experimentally, the InPBi alloy with good single crystal quality has been successfully synthesized recently and exhibits strong and broad photoluminescence at room temperature [5,6]. However, the electric transport characteristics of the InPBi alloy are poorly understood. In this work, we systematically investigate the effect of Bi incorporation on electric transport properties of the InP1-xBix alloys.
