Ⅲ-ⅤSemiconductors containing a small amount of Bi,known as dilute bismides,have attracted great interest in recent years,due to the large band-gap reduction and other unique properties[1,2].Previous studies have bee...Ⅲ-ⅤSemiconductors containing a small amount of Bi,known as dilute bismides,have attracted great interest in recent years,due to the large band-gap reduction and other unique properties[1,2].Previous studies have been primarily focused on the growth and optical properties of the GaAs-based bismuthides[3],while the properties of other dilute bismides are less well understood.Berding et al.[4]theoretically predicted that InPBi is expected to be展开更多
基金supported by the National Basic Research Program of China(Grant No.2014CB643900)the National Natural Science Foundation of China(Grant Nos.61225021,11474272,11204296,and 11474247)
文摘Ⅲ-ⅤSemiconductors containing a small amount of Bi,known as dilute bismides,have attracted great interest in recent years,due to the large band-gap reduction and other unique properties[1,2].Previous studies have been primarily focused on the growth and optical properties of the GaAs-based bismuthides[3],while the properties of other dilute bismides are less well understood.Berding et al.[4]theoretically predicted that InPBi is expected to be
