基于密度泛函理论的第一性原理对Ag_3XO_4(X=P,As,V)电子结构及光催化性质进行了对比研究。与Ag_3XO_4相比,Ag_3VO_4较好的光催化稳定性主要源于其结构中Ag-O间较强的作用力增加了对Ag+的控制,而Ag_3VO_4弱的光催化活性与其导带底中存在...基于密度泛函理论的第一性原理对Ag_3XO_4(X=P,As,V)电子结构及光催化性质进行了对比研究。与Ag_3XO_4相比,Ag_3VO_4较好的光催化稳定性主要源于其结构中Ag-O间较强的作用力增加了对Ag+的控制,而Ag_3VO_4弱的光催化活性与其导带底中存在d轨道成份以及较低的价带边势(2.335 V,vs NHE)有关;对Ag_3AsO_4而言,其优于Ag_3XO_4光催化活性的原因基于三个方面:(1)由高分散Ags-Ags杂化轨道构成的导带底能带;(2)窄的带隙(1.91 e V);(3)宽的可见光响应范围以及高的光吸收系数。此外,Ag_3XO_4(X=P,As,V)均为间接带隙半导体光催化材料,其中,Ag_3VO_4有用于分解水制氢研究的可能;上述计算结果与实验结果吻合。展开更多
Electroless deposition has been used to deposit Ni-P films on glass slides using the reducing agent sodium hypophosphite. This has been done with a purpose to use Ni-P films as back contact for silicon carbide radiati...Electroless deposition has been used to deposit Ni-P films on glass slides using the reducing agent sodium hypophosphite. This has been done with a purpose to use Ni-P films as back contact for silicon carbide radiation detectors. By keeping deposition time, temperature, pH and concentration of the precursor solution constant, the film deposition has been done. XPS studies were done to analyze the composition and stoichiometry of Ni-P thin films.展开更多
La 4- x (P 2O 5) 3:Eu x were synthesized from a mixed solution of La(NO 3) 3 and Eu(NO 3) 3 in nitric acid solution(pH=4.5) followed by precipitation on addition of Na 4P 2O 7 solution and calcination at 900 ℃. The p...La 4- x (P 2O 5) 3:Eu x were synthesized from a mixed solution of La(NO 3) 3 and Eu(NO 3) 3 in nitric acid solution(pH=4.5) followed by precipitation on addition of Na 4P 2O 7 solution and calcination at 900 ℃. The products showed a highest excitation peak at 349 nm and highest emission peak at 596 nm .展开更多
文摘基于密度泛函理论的第一性原理对Ag_3XO_4(X=P,As,V)电子结构及光催化性质进行了对比研究。与Ag_3XO_4相比,Ag_3VO_4较好的光催化稳定性主要源于其结构中Ag-O间较强的作用力增加了对Ag+的控制,而Ag_3VO_4弱的光催化活性与其导带底中存在d轨道成份以及较低的价带边势(2.335 V,vs NHE)有关;对Ag_3AsO_4而言,其优于Ag_3XO_4光催化活性的原因基于三个方面:(1)由高分散Ags-Ags杂化轨道构成的导带底能带;(2)窄的带隙(1.91 e V);(3)宽的可见光响应范围以及高的光吸收系数。此外,Ag_3XO_4(X=P,As,V)均为间接带隙半导体光催化材料,其中,Ag_3VO_4有用于分解水制氢研究的可能;上述计算结果与实验结果吻合。
文摘Electroless deposition has been used to deposit Ni-P films on glass slides using the reducing agent sodium hypophosphite. This has been done with a purpose to use Ni-P films as back contact for silicon carbide radiation detectors. By keeping deposition time, temperature, pH and concentration of the precursor solution constant, the film deposition has been done. XPS studies were done to analyze the composition and stoichiometry of Ni-P thin films.
文摘La 4- x (P 2O 5) 3:Eu x were synthesized from a mixed solution of La(NO 3) 3 and Eu(NO 3) 3 in nitric acid solution(pH=4.5) followed by precipitation on addition of Na 4P 2O 7 solution and calcination at 900 ℃. The products showed a highest excitation peak at 349 nm and highest emission peak at 596 nm .
