Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si（100） substrates at room temperature using a reactive magnetron sputtering system.The effects of Y content on the bonding str...Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si（100） substrates at room temperature using a reactive magnetron sputtering system.The effects of Y content on the bonding structure,crystallographic structure,and electrical properties of Y-doped HfO2 films are investigated.The x-ray photoelectron spectrum（XPS） indicates that the core level peak positions of Hf 4 f and O 1 s shift toward lower energy due to the structure change after Y doping.The depth profiling of XPS shows that the surface of the film is completely oxidized while the oxygen deficiency emerges after the stripping depths have increased.The x-ray diffraction and high resolution transmission electron microscopy（HRTEM） analyses reveal the evolution from monoclinic HfO2 phase towards stabilized cubic HfO2 phase and the preferred orientation of（111） appears with increasing Y content,while pure HfO2 shows the monoclinic phase only.The leakage current and permittivity are determined as a function of the Y content.The best combination of low leakage current of 10-7 A/cm^2 at 1 V and a highest permittivity value of 29 is achieved when the doping ratio of Y increases to 9 mol%.A correlation among Y content,phase evolution and electrical properties of Y-doped HfO2 ultra-thin film is investigated.展开更多
The BES-Ⅲ Detector is a very versatile multipurpose device located at the Institute of High Energy Physics （IHEP） in Beijing, China. Concerning the physics program it ties stringently up to the past BES and BES-Ⅱ ...The BES-Ⅲ Detector is a very versatile multipurpose device located at the Institute of High Energy Physics （IHEP） in Beijing, China. Concerning the physics program it ties stringently up to the past BES and BES-Ⅱ experiments. Since start of the data taking in the middle of 2008 the accumulated dataset of 200.10^6 J/ψ events and 100.10^6 ψ＇ events already exceeds the world data on these resonances. In addition to studies of the charmonium systems the data offers great opportunity for investigations in the light hadron sector. In detail it will be reported about the confirmation of the enhancement in pp invariant mass in radiative J/ψ decays, the search for decays Y（2175） → K＊0K＊0, observation of a charged K^± in K^±π^0 and observation of a new excited baryon N＊（2065） decaying to pπ^0 and charged onjugate. The first result is based on data taken by BES-Ⅱ and BES-Ⅲ, the latter three on data collected by BES-Ⅱ only.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51272034 and 51672032)the Fundamental Research Funds for the Central Universities,China(Grant No.DUT17ZD211)
文摘Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si（100） substrates at room temperature using a reactive magnetron sputtering system.The effects of Y content on the bonding structure,crystallographic structure,and electrical properties of Y-doped HfO2 films are investigated.The x-ray photoelectron spectrum（XPS） indicates that the core level peak positions of Hf 4 f and O 1 s shift toward lower energy due to the structure change after Y doping.The depth profiling of XPS shows that the surface of the film is completely oxidized while the oxygen deficiency emerges after the stripping depths have increased.The x-ray diffraction and high resolution transmission electron microscopy（HRTEM） analyses reveal the evolution from monoclinic HfO2 phase towards stabilized cubic HfO2 phase and the preferred orientation of（111） appears with increasing Y content,while pure HfO2 shows the monoclinic phase only.The leakage current and permittivity are determined as a function of the Y content.The best combination of low leakage current of 10-7 A/cm^2 at 1 V and a highest permittivity value of 29 is achieved when the doping ratio of Y increases to 9 mol%.A correlation among Y content,phase evolution and electrical properties of Y-doped HfO2 ultra-thin film is investigated.
文摘The BES-Ⅲ Detector is a very versatile multipurpose device located at the Institute of High Energy Physics （IHEP） in Beijing, China. Concerning the physics program it ties stringently up to the past BES and BES-Ⅱ experiments. Since start of the data taking in the middle of 2008 the accumulated dataset of 200.10^6 J/ψ events and 100.10^6 ψ＇ events already exceeds the world data on these resonances. In addition to studies of the charmonium systems the data offers great opportunity for investigations in the light hadron sector. In detail it will be reported about the confirmation of the enhancement in pp invariant mass in radiative J/ψ decays, the search for decays Y（2175） → K＊0K＊0, observation of a charged K^± in K^±π^0 and observation of a new excited baryon N＊（2065） decaying to pπ^0 and charged onjugate. The first result is based on data taken by BES-Ⅱ and BES-Ⅲ, the latter three on data collected by BES-Ⅱ only.
