A Temperature-Insensitive Amplified Spontaneous Emission Broadband Source Based on Er-Doped Fiber

To obtain a stable amplified spontaneous emission（ASE） source for complex environment applications, we design an ASE source and study the output power and spectral characteristics under different ambient temperatures.We optimize the structure of the ASE source to flatten the ASE spectrum, and study the output characteristics in terms of output power and optical spectrum under different pump powers. Then the performance of the ASE source is investigated in the temperature range from-18.9°C to 50°C. A stable-power and flat-spectrum ASE source can be obtained by structural optimization and pump control.

Broadband amplified spontaneous emission from Er^3＋ -doped single-mode tellurite fibre

This paper reports on the fabrication and characterization of a newly erbium-doped single-mode tellurite glass-fibre applicable for 1.5-μm optical amplifiers. A very broad erbium amplified spontaneous emission in the range 1450-1650 nm from erbium-doped single-mode tellurite glass-fibre is obtained upon excitation of a 980-nm laser diode. The effects of the length of glass-fibre and the pumping power of laser diode on the amplified spontaneous emission are discussed. The result indicates that the tellurite glass-fibre is a promising candidate for designing fibre-optic amplifiers and lasers.

Theoretical study of amplified spontaneous emission intensity and bandwidth reduction in polymer

Amplified spontaneous emission （ASE）, including intensity and bandwidth, in a typical example of BuEH-PPV is calculated. For this purpose, the intensity rate equation is used to explain the reported experimental measurements of a BuEH-PPV sample pumped at different pump intensities from Ip = 0.61 MW/cm2 to 5.2 MW/cm2. Both homogeneously and inhomogeneously broadened transition lines along with a model based on the geometrically dependent gain coefficient （GDGC） are examined and it is confirmed that for the reported measurements the homogeneously broadened line is responsible for the light-matter interaction. The calculation explains the frequency spectrum of the ASE output intensity extracted from the sample at different pump intensities, unsaturated and saturated gain coefficients, and ASE bandwidth reduction along the propagation direction. Both analytical and numerical calculations for verifying the GDGC model are presented in this paper. Although the introduced model has shown its potential for explaining the ASE behavior in a specific sample it can be universally used for the ASE study in different active media.

Effect of different metal-backed waveguides on amplified spontaneous emission

We investigate the effect of a metallic electrode on the ability for poly[2-methoxy-5-（2＇-ethylhexyloxy）-1,4- phenylene vinylene] （MEH-PPV） film to undergo amplified spontaneous emission （ASE）. The threshold of the device with Ag cladding is about 10 times greater than that of a metal-free device, but metal such as Al completely shuts off ASE. The ASE recurs when a thin spacer layer, such as a few nanometers of SiO2, is introduced between the MEH-PPV film and the Al cladding. Compared with the Cu or Al electrode, the Ag cladding is most suited to serve as an electrode with its low optical loss due to its high work-function and reflectivity.

Solvent-vapour treatment induced performance enhancement of amplified spontaneous emission based on poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene]

In this work, performance enhancements of amplified spontaneous emission （ASE） from poly[2-methoxy-5-（2＇- ethyl-hexyloxy）-l,4-phenylene vinylene] （MEH-PPV） have been achieved via solvent vapour treatment. Correlations between the morphology of the film and the optical performance of polymer-based ASE are investigated. The active layers are characterised by atomic force microscopy and optical absorption. The results show that the solvent-vapour treatment can induce the MEH-PPV self-organisation into an ordered structure with a smooth surface, leading to enhanced optical gain. Thus the solvent-vapour treatment is a good method for improving the optical properties of the MEH-PPV.

Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] film

We investigate the amplified spontaneous emission （ASE） from an Ag-backed poly[2-methoxy-5-（2＇-ethylhexyloxy）- 1,4-phenylenevinylene] （MEH-PPV） film with different film thicknesses. The ASE characteristics of Ag-backed MEH- PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding. The threshold, the gain, and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device. The lasing threshold of this device is about 7.5 times that of a metal-free device. Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.

Size-dependent Amplified Spontaneous Emission from Organic Crystal Slabs

The authors investigated size-dependent amplified spontaneous emission（ASE） from organic crystals. Specifically, N-（4-{4-[4-（diphenylamino）styryl]styryl}phenyl）-N-phenylbenzene amine（Ph-TPA2） organic crystals were used in the experiment. The ASE threshold was decreased with the decrease of the width of the crystal at the same gain length, which reflects that total internal reflection plays an important role on the ASE properties in these slab organic crystals. The ASE properties pumped by one- and two-photon were also comparatively studied. We found that the thresholds of ASE in two-photon pumping condition are less size-dependent than those in singlephoton condition because of the nonlinear light generation processes in two-photon absorption processes.

Impact of amplified spontaneous emission noise on the SRS threshold of high-power fiber amplifiers

Impact of amplified spontaneous emission(ASE)noise on the stimulated Raman scattering(SRS)threshold of highpower fiber amplifiers is demonstrated numerically through a spectral evolution approach.The simulation results confirm that ASE noise in the Raman wavelength band could reduce the SRS threshold of high-power fiber amplifiers significantly.As for ASE noise originated the main amplifier,it becomes stronger and reduces the SRS threshold at shorter operation wavelength below 1052 nm.As for ASE noise originated from the seed laser,it reduces the SRS threshold at different operation wavelength under the condition that the Raman ratio is over-90 dB in the seed laser.The theoretical method and results in this work could provide a well reference to extend the operation wavelength of high-power fiber lasers.

Loss prediction of three-level amplified spontaneous emission sources in radiation environment

A model of three-level amplified spontaneous emission(ASE)sources,considering radiation effect,is proposed to predict radiation induced loss of output power in radiation environment.Radiation absorption parameters of ASE sources model are obtained by the fitting of color centers generation and recovery process of gain loss data at lower dose rate.Gain loss data at higher dose is applied for self-validating.This model takes both the influence of erbium ions absorption and photon bleaching effect into consideration,which makes the prediction of different dose and dose rate more accurate and flexible.The fitness value between ASE model and gain loss data is 99.98%,which also satisfies the extrapolation at the low dose rate.The method and model may serve as a valuable tool to predict ASE performance in harsh environment.

Nonlinear Absorption and Low-threshold Two-photon Pumped Amplified Stimulated Emission from FAPbBr_(3) Nanocrystals

Formamidinium lead bromide(FAPbBr_(3))nanocrystals(NCs)have been considered to be a good optoelectronic material due to their pure green emission,excellent stability and superior carrier transport characteristics.However,two-photon pumped amplified spontaneous emission(ASE)and the corresponding nonlinear optical properties of FAPbBr_(3) NCs are scarcely revealed.Herein,we synthesized colloidal FAPbBr_(3) NCs with different sizes by changing the molar ratio of FABr/PbBr_(2) in the precursor solution,using ligand assisted precipitation(LARP)technology at room temperature.Photoluminescence(PL)and time resolved photoluminescence(TRPL)spectroscopy were measured to characterize their ASE properties.And their nonlinear optical properties were studied through the Zscan technique and the two-photon excited fluorescence method.The stimulated emission properties including oneand two-photon pumped ASE have been realized from FAPbBr_(3) NCs.With large two-photon absorption coefficient(0.27 cm/GW)and high non-linear absorption cross-section(7.52×10^(5) GM),ASE with threshold as low as 9.8μJ/cm^(2) and 487μJ/cm^(2) have been obtained from colloidal FAPbBr_(3) NCs using one-and two-photon excitations.These results indicate that as a new possible green-emitting frequency-upconversion material with low thresholds,FAPbBr_(3) NCs hold great potential in the development of high-performance two-photon pump lasers.

Amplified spontaneous emission contrast of CPA laser

The influence on the level of amplified spontaneous emission （ASE） contrast resulting from the different seed pulse energies has been experimentally studied in a 10-TW-level femtosecond Ti：sapphire chirped pulse amplification laser. It is found that, with the seed pulse energy increasing, the ASE pedestal is suppressed more efficiently, and the ASE contrast is improved with a saturable tendency. The measurement of -2×10^-8 ASE contrast in the range of more than 50 ps before the main pulse is achieved in the laser.

A cyanostilbene-based molecule with aggregation-induced emission properties: amplified spontaneous emission, protonation effect and electroluminescence

A terpyridine-substituted cyanostilbene derivative(Z)-2-(4′-([2,2′:6′,2″-terpyridin]-4′-yl)-[1,1′-biphenyl]-4-yl)-3-phenylacrylonitrile(CNSTPy) was synthesized and characterized. The compound exhibits remarkable aggregation-induced emission phenomenon and its single crystal shows a blue emission with fluorescent efficiency as high as 45%. Based on its aggregation state behavior, multiple applications towards exploring its lasing, fluorescence switching and electroluminescence properties were realized. Amplified spontaneous emission(ASE) was observed from the crystal and verified by the variable pump strip method, with a threshold value of ～1.5 m J cm^(-2). The protonation/deprotonation processes accompanied by the formation of different molecular aggregation structure result in the distinct blue and yellow emissions. Additionally, the molecule also shows a moderate electroluminescence performance.

Amplified spontaneous emission, optical waveguide and polarized emission based on 2,5-diaminoterephthalates

A series of 2,5-diaminoterephthalates with a simple structure were synthesized through one-step reaction, and their bar-shaped single crystals with a large size and a smooth surface have been obtained via the solvent-evaporation method. These crystals exhibit bright emission with fluorescence quantum yields higher than 0.2. They display the waveguide property, and low optical loss coefficients for waveguide have been determined for the crystal of one compound. In addition, the crystal can cause linear polarization of the light emitted from it, with a high polarization contrast of 0.70. Most importantly, these crystals can realize amplified spontaneous emission （ASE）, including the red ASE, with appreciable energy thresholds of 72-198 kW/cm^2 and high gain coefficients, which suggests the potential of these crystals for the application in organic solid-state lasers.

Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated.The amplified spontaneous emission（ASE）spectrum and gain were measured and analyzed.It is shown that the ASE spectrum and gain characteristic are greatly influenced by the distribution of the injection current density.By changing the injection current density of two electrodes,the full width at half maximum,peak wavelength,peak power of the ASE spectrum and the gain characteristic can be easily controlled.

Laser-annealing-made amplified spontaneous emission of "giant" CdSe/CdS core/shell nanocrystals transferred from bulk-like shell to quantum-confined core

'Giant' Cd Se/Cd S core/shell nanocrystals(NCs) were synthesized with thick Cd S shell(15 monolayers), and the x-ray diffraction(XRD) measurement indicates there is a zinc blende phase in the thick Cd S shell, whereas it transformed into wurtzite phase under 5 min radiation with a 400 nm, 594 μJ∕cm2femtosecond(fs) laser beam.The evolution of the NCs’ spontaneous emission under the fs laser radiation was recorded with a Hamamatsu streak camera. The as-synthesized NCs exhibit an amplified spontaneous emission(ASE) at 530 nm, which comes from a bulk-like Cd S shell due to the interfacial potential barrier, which could slow down the relaxation of holes from the shell to the core. After being annealed by an fs laser, the ASE of the g-NCs is transferred from a bulk-like Cd S shell to a quantum-confined Cd Se core because the phase transformation determined with the XRD measurement could remove the interfacial barrier. Besides the ASE at 643 nm, two shorter-wavelength ASE peaks at 589 and 541 nm, corresponding to optical transitions of the second(1P) and third(1D) electron quantization shells of the Cd Se core, also appear, thus indicating that Auger recombination is effectively suppressed.

Amplified spontaneous emission and its restraint in a terawatt Ti: sapphire amplifier

Amplified spontaneous emission (ASE) and its restraint in a femtosecond Ti: sapphire chirped-pulse amplifier were investigated. The noises arising from ASE were effectively filtered out in the spatial, temporal and spectral domain. Pulses as short as 38 fs were amplified to peak power of 1.4 MI. The power ratio between the amplified femtosecond pulse and the ASE was higher than 106: 1.

Evaluating damage in optical elements using an amplified spontaneous emission beam

A method to evaluate damage in optical elements with the near field of an amplified spontaneous emission(ASE) beam has been developed. Local peak intensities are generally distributed randomly in the near field of a laser beam. The partial coherence of the ASE source results in a very smooth beam profile. The coherence time of ASE is much less than the pulse width. Small-scale intensity modulations can be smoothed out rapidly within the time of a pulse width.In the experiments, ASE is generated from a multifunctional high-performance Nd:glass system, with a pulse duration of 3 ns, a spectral width(full width at half maximum, FWHM) of 1 nm and an adjustable energy range from 1 to 10 J.The damage thresholds of samples induced by ASE are two to three times higher than those induced by a laser with the same size of test spot. Furthermore, the ASE beam has great potential for the detection of defects over a large area and the conditioning of optical elements.

Amplified spontaneous emission and power amplification in high-power DF laser systems

Amplified spontaneous emission （ASE） always occurs in high-power DF laser systems with master oscillator-power amplifier （MOPA） configuration. ASE not only reduces the energy extraction efficiency of the laser system, but also negatively influences its heat management. The interaction between the ASE flux and the coherent laser flux, as well as the effect of ASE on cuboid DF amplifiers, is studied using a finite difference method and an iterative arithmetic. In addition, the influence of ASE on coherent laser amplification is discussed in detail.

A位取代和缺陷钝化实现钙钛矿薄膜的低阈值红光放大自发辐射

作为发红光的光学增益介质,CsPbI_(2)Br钙钛矿材料具有良好的热稳定性和合适的光学带隙,引起了研究者的广泛关注。然而,溶液法制备的CsPbI2Br薄膜在高湿度环境下易发生相变,同时薄膜存在大量缺陷,阻碍了其性能提升。鉴于此,采用部分FA^(+)(CH_(4)N_(2)^(+))进行A位取代以提高钙钛矿薄膜的相稳定性,然后利用聚甲基丙烯酸甲酯(PMMA)对钙钛矿薄膜进行表面钝化。得益于FA^(+)阳离子带来的薄膜形貌的改善和PMMA良好缺陷钝化效果,实现了Cs_(0.7)FA_(0.3)PbI_(2)Br钙钛矿薄膜的低阈值红光放大自发辐射(ASE),其发射波长为689 nm,纳秒激光激发下的阈值为15μJ/cm^(2)。同时,该薄膜具有良好的疏水性和光稳定性,在大气湿度环境下(RH为(40±10)%),采用3000μJ/cm^(2)脉冲激光持续照射120 min,其ASE强度仍能维持其初始值的93%。这项工作为实现低阈值高稳定的红光ASE和激光提供了参考。

基于MgO:PPLN晶体的1554.8nm倍频器

为满足风云四号气象卫星搭载的闪电成像仪图像定位精度检验的光源需求,设计了一台基于两级主振荡功率放大器结构(MOPA)和掺氧化镁的周期极化铌酸锂(MgO:PPLN)晶体倍频技术,中心波长为777.4 nm,连续输出功率为1.5 W的激光器。采用反向940 nm off-peak泵浦方式较好地抑制了光放大器中自激放大辐射(ASE)和受激布里渊散射(SBS)效应,主放大器光-光转换效率达37.2%,获得了输出光功率为15 W,信噪比为59.6 dB,线宽为323.4 kHz,相对强度噪声为-145 dBc/Hz的单频窄线宽激光。在理论分析所用MgO:PPLN晶体倍频效率、温度调谐带宽以及可接收的波长带宽基础上,采用单通倍频方式获得了功率为1.5 W的777.4 nm连续光。