The effect of Cd impurity on the electronic structure and magnetic properties of hydrogen-terminated AlN nanoribbons with zigzag edges （ZAINNRs） was in- vestigate using the band structure results obtained through th...The effect of Cd impurity on the electronic structure and magnetic properties of hydrogen-terminated AlN nanoribbons with zigzag edges （ZAINNRs） was in- vestigate using the band structure results obtained through the full potential linearized augmented plane wave （FP- LAPW） method within the density functional theory （DFT）. The exchange correlation potential was treated by the generalized gradient approximation within the Perdew scheme. The calculated results show that the H-terminated zigzag AlN nanoribbon is semiconducting and nonmag- netic material with a direct band gap of about 2.78 eV, while the Cd-doped H-terminated ZAlNNR structures show complete （100 %） spin polarization very close to the Fermi level, which will result in spin-anisotropic transport. The charge transport is totally dominated by Cd spin down electrons in the H-terminated ZAlNNR. These results suggest potential applications for the development of using the A1N nanoribbons in nanoelectronics and magnetoelec-tronic devices as a base.展开更多
基金financially supported by the Research of the Ayatollah Alozma Boroujerdi University(No. 92-1012)
文摘The effect of Cd impurity on the electronic structure and magnetic properties of hydrogen-terminated AlN nanoribbons with zigzag edges （ZAINNRs） was in- vestigate using the band structure results obtained through the full potential linearized augmented plane wave （FP- LAPW） method within the density functional theory （DFT）. The exchange correlation potential was treated by the generalized gradient approximation within the Perdew scheme. The calculated results show that the H-terminated zigzag AlN nanoribbon is semiconducting and nonmag- netic material with a direct band gap of about 2.78 eV, while the Cd-doped H-terminated ZAlNNR structures show complete （100 %） spin polarization very close to the Fermi level, which will result in spin-anisotropic transport. The charge transport is totally dominated by Cd spin down electrons in the H-terminated ZAlNNR. These results suggest potential applications for the development of using the A1N nanoribbons in nanoelectronics and magnetoelec-tronic devices as a base.
