A novel antifuse structure with amorphous bismuth zinc niobate（a-BZN） dielectrics was proposed.The characteristics of the a-BZN antifuse were investigated.Programming direction of up to down was chosen to rupture th...A novel antifuse structure with amorphous bismuth zinc niobate（a-BZN） dielectrics was proposed.The characteristics of the a-BZN antifuse were investigated.Programming direction of up to down was chosen to rupture the a-BZN antifuse.The breakdown voltage of the a-BZN antifuse was obtained at a magnitude of 6.56 V.A large off-state resistance of more than 1 GΩfor the a-BZN antifuse was demonstrated.The surface micrograph of the ruptured a-BZN antifuses was illustrated.Programming characteristics with the programming time of 0.46 ms and on-state properties with the average resistance value of 26.1Ωof the a-BZN antifuse were exhibited.The difference of characteristics of the a-BZN antifuse from that of a cubic pyrochlore bismuth zinc niobate（cp-BZN） antifuse and gate oxide antifuse was compared and analyzed.展开更多
基金Project supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices(No.KFJJ200909)
文摘A novel antifuse structure with amorphous bismuth zinc niobate（a-BZN） dielectrics was proposed.The characteristics of the a-BZN antifuse were investigated.Programming direction of up to down was chosen to rupture the a-BZN antifuse.The breakdown voltage of the a-BZN antifuse was obtained at a magnitude of 6.56 V.A large off-state resistance of more than 1 GΩfor the a-BZN antifuse was demonstrated.The surface micrograph of the ruptured a-BZN antifuses was illustrated.Programming characteristics with the programming time of 0.46 ms and on-state properties with the average resistance value of 26.1Ωof the a-BZN antifuse were exhibited.The difference of characteristics of the a-BZN antifuse from that of a cubic pyrochlore bismuth zinc niobate（cp-BZN） antifuse and gate oxide antifuse was compared and analyzed.
