Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and ...Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements＇ chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.展开更多
The influence of processing parameters is investigated on the structural characteristics of single and mixed oxides produced by spray pyrolysis technique. The films were synthesized by spraying precursor solutions thr...The influence of processing parameters is investigated on the structural characteristics of single and mixed oxides produced by spray pyrolysis technique. The films were synthesized by spraying precursor solutions through a noz-zle onto a heated alumina substrate. The precursor consisted separately of aqueous solutions of tin chloride for SnO2 and zinc chloride for ZnO for single oxide cases, and aqueous solutions of tin chloride and indium nitrate for SnO2 + In2O3 and zinc chloride and indium nitrate solutions for ZnO + In2O3 for mixed oxide cases. The substrate temperature was varied accordingly for each single and mixed case. The films produced were characterized by X-ray Photoelectron Spectroscopy and Scanning Electron Microscopy. The results indicate that a non-homogenous film is formed at low temperature for both single oxides considered. The temperature has significant effect on the composition of the synthesized films of both single oxides below 450℃. The results for mixed oxides show that the best homogeneous films are obtained for 80 wt% ZnO + 20 wt% In2O3, and 80 wt% SnO2 + 20 wt% In2O3.展开更多
Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The struc...Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.展开更多
基金Supported by the RU Top-Down under Grant No 1001/CSS/870019
文摘Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements＇ chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.
文摘The influence of processing parameters is investigated on the structural characteristics of single and mixed oxides produced by spray pyrolysis technique. The films were synthesized by spraying precursor solutions through a noz-zle onto a heated alumina substrate. The precursor consisted separately of aqueous solutions of tin chloride for SnO2 and zinc chloride for ZnO for single oxide cases, and aqueous solutions of tin chloride and indium nitrate for SnO2 + In2O3 and zinc chloride and indium nitrate solutions for ZnO + In2O3 for mixed oxide cases. The substrate temperature was varied accordingly for each single and mixed case. The films produced were characterized by X-ray Photoelectron Spectroscopy and Scanning Electron Microscopy. The results indicate that a non-homogenous film is formed at low temperature for both single oxides considered. The temperature has significant effect on the composition of the synthesized films of both single oxides below 450℃. The results for mixed oxides show that the best homogeneous films are obtained for 80 wt% ZnO + 20 wt% In2O3, and 80 wt% SnO2 + 20 wt% In2O3.
基金supported by the National Key Basic Research and Development Programme of China(No.2001CB610504)the National Natural Science Foundation of China(Grant No.60576039,10374060).
文摘Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.
基金Supported by the Program of Jiangsu Development & Reform Commission(2005)the Industrial-ization Boosting Program of College Scientific Reserach Achievements of the Education Department of Jiangsu Province(JHB06-03)~~
